GaN/InGaN Heterojunction Bipolar Transistors with Collector Current Density > 20 kA/cm2

Yun Zhang, Institute of Semiconductors, Chinese Academy of Sciences, Beijing
Yi-Che Lee, Georgia Institute of Technology
Zachary Lochner, Georgia Institute of Technology
Hee Jin Kim, Georgia Institute of Technology
Jae-Hyun Ryou, Georgia Institute of Technology
Russell D. Dupuis, Georgia Institute of Technology, Atlanta, GA