Homoepitaxial GaN for vertical power and RF hybrid devices grown on production-scale MOCVD reactors

Felix Kaess, IQE
Oleg Laboutin, IQE
Chen-Kai Kao, IQE
Hugues Marchand, IQE

Homoepitaxial GaN growth was implemented, studied, and improved in a production scale MOCVD reactor. The epitaxial GaN threading dislocation density was very close to that of the different free-standing GaN substrates and uniform across large diameters. We were able to limit incorporation of impurities to the low levels required for vertical electron drift layers by using appropriate growth process conditions. Different surface analysis studies revealed near-perfect step flow growth over large areas of the wafers.

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