C. Mauder

AIXTRON SE, Herzogenrath, Germany
  • May 10, 2022 // 2:40pm

    2.3 Advanced MOCVD Technology for RF-HEMT Growth on SEMI-Standard Large-Area (111) Silicon Substrates

    C. Mauder, AIXTRON SE, Herzogenrath, Germany
    H. Hahn, AIXTRON SE, Herzogenrath, Germany
    Z. Gao, AIXTRON SE, Herzogenrath, Germany
    M. Marx, AIXTRON SE, Herzogenrath, Germany
    T. Zweipfennig, RWTH Aachen University, Germany
    J. Ehrler, RWTH Aachen University, Germany
    H. Kalisch, RWTH Aachen University, Germany
    J. Bolton, AMO GmbH, Aachen Germany
    M. Lemme, AMO GmbH, Aachen Germany
    A. Alian, imec vzw, Leuven, Belgium
    B. Parvais, imec vzw, Leuven, Belgium
    M. Zhao, imec vzw, Leuven, Belgium
    Michael Heuken, AIXTRON SE
    A. Vescan, RWTH Aachen University, Germany
    Loader Loading...
    EAD Logo Taking too long?

    Reload Reload document
    | Open Open in new tab

    Download [1.08 MB]

    Download Paper

  • 7.5.2023 Improving the yield for GaN-on-Si HEMT devices for power applications

    D. Fahle, AIXTRON SE Germany
    C. Mauder, AIXTRON SE, Herzogenrath, Germany
    H. Hahn, AIXTRON SE
    Z. Gao, AIXTRON SE, Herzogenrath, Germany
    Niels Posthuma, Imec
    Stefaan Decoutere, Imec, Leuven, Belgium

    7.5.2023_Improving the yield for GaN-on-Si HEMT devices for power applications_extended_v2