C. Mauder
AIXTRON SE, Herzogenrath, Germany
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May 10, 2022 // 2:40pm
2.3 Advanced MOCVD Technology for RF-HEMT Growth on SEMI-Standard Large-Area (111) Silicon Substrates
C. Mauder, AIXTRON SE, Herzogenrath, GermanyH. Hahn, AIXTRON SE, Herzogenrath, GermanyZ. Gao, AIXTRON SE, Herzogenrath, GermanyM. Marx, AIXTRON SE, Herzogenrath, GermanyT. Zweipfennig, RWTH Aachen University, GermanyJ. Ehrler, RWTH Aachen University, GermanyH. Kalisch, RWTH Aachen University, GermanyJ. Bolton, AMO GmbH, Aachen GermanyM. Lemme, AMO GmbH, Aachen GermanyA. Alian, imec vzw, Leuven, BelgiumB. Parvais, imec vzw, Leuven, BelgiumM. Zhao, imec vzw, Leuven, BelgiumMichael Heuken, AIXTRON SEA. Vescan, RWTH Aachen University, GermanyDownload PaperLoading...
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7.5.2023 Improving the yield for GaN-on-Si HEMT devices for power applications
D. Fahle, AIXTRON SE GermanyC. Mauder, AIXTRON SE, Herzogenrath, GermanyH. Hahn, AIXTRON SEZ. Gao, AIXTRON SE, Herzogenrath, GermanyNiels Posthuma, ImecStefaan Decoutere, Imec, Leuven, Belgium