Chih-Wei Hu

Technology Development Division, Episil-Precision Inc, Taiwan
  • May 01, 2019 // 3:00pm – 3:20pm

    9.5 Low Interface Noise of p-GaN Gate Normally-off HEMT with Microwave Ohmic Annealing Process

    Yi-Sheng Chang, Chang Gung University
    Rong Xuan, Technology Development Division, Episil-Precision Inc, Taiwan
    Chih-Wei Hu, Technology Development Division, Episil-Precision Inc, Taiwan
    Download Paper

  • 6.2 High Performance Normally-Off Operation p-GaN Gate HEMT with Composited Barriers Structure Design

    Yi-Sheng Chang, Chang Gung University
    Bo-Hong Li, Chang Gung University
    Hsiang-Chun Wang, Chang Gung University
    Rong Xuan, Technology Development Division, Episil-Precision Inc, Taiwan
    Chih-Wei Hu, Technology Development Division, Episil-Precision Inc, Taiwan
    Jung-Ruey Tsai, Department of Photonics and Communication Engineering, Asia University, Taiwan
    Download Paper