Invited Presentation
D. Fahle
AIXTRON SE Germany
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March 10, 2022 // 8:45am
13.2 Propelling the Power Electronics Revolution: 200 mm Diameter, 100 V to 1800 V and Beyond GaN-on-QST® High Volume Device Manufacturing Platform
Cem Basceri, QROMIS, USAVlad Odnoblyudov, QROMIS, USAO. Aktas, Sandia National Labs, Albuquerque, NMWalter Wohlmuth, Vanguard International Semiconductor Corporation, TaiwanKaren Geens, imec, Leuven, BelgiumBenoit Bakeroot, imec, Leuven, Belgium and CMST, imec & Ghent University, Ghent, BelgiumH. Hahn, AIXTRON SE, Herzogenrath, GermanyD. Fahle, AIXTRON SE GermanyStefaan Decoutere, Imec, Leuven, BelgiumA. Vohra, imec, Leuven, BelgiumM. Heuken, AIXTRON SE GermanyDownload PaperLoading...
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7.5.2023 Improving the yield for GaN-on-Si HEMT devices for power applications
D. Fahle, AIXTRON SE GermanyC. Mauder, AIXTRON SE, Herzogenrath, GermanyH. Hahn, AIXTRON SEZ. Gao, AIXTRON SE, Herzogenrath, GermanyNiels Posthuma, ImecStefaan Decoutere, Imec, Leuven, Belgium