Dennis Walker

Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA

  • Dispersion Characteristics of ScAlN and ScAlGaN HEMTs by Pulsed I-V Measurements

    Kelson Chabak., Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
    Cathy Lee, Qorvo Inc.
    Yu Cao, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
    Andy Xie, Qorvo
    Edward Beam, QORVO
    Antonio Crespo, Air Force Research Laboratory, Sensors Directorate
    Dennis Walker, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
    Robert Fitch, AFRL
    James Gillespie, Air Force Research Laboratory
    Andrew Green, Air Force Research Laboratory, Sensors Directorate

    We report the dispersion characteristics of ScAlN/GaN high-electron-mobility transistors (HEMTs) with various epitaxial designs. Devices were fabricated on both ternary (ScAlN) and quaternary (ScAlGaN) materials. The effects of a GaN capping layer was also investigated. We report similar DC and RF performance for all wafers, but significantly worse dispersion which occurs on the quaternary samples. We observe a total gate and drain lag for the ScAlN wafer to be 49% while the ScAlGaN with and without the GaN cap had 10 and 12% dispersion, respectively.

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  • 14.4 Device Development of Gallium Oxide MOSFETs Grown by MOVPE on Native Substrates for High-Voltage Applications

    Neil Moser A., Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,
    Kelson Chabak, Air Force Research Laboratory, Sensors Directorate
    Andrew Green, Air Force Research Laboratory, Sensors Directorate
    Dennis Walker, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
    Stephen Tetlak, AFRL
    Eric Heller, AFRL
    Antonio Crespo, Air Force Research Laboratory, Sensors Directorate
    Robert Fitch, AFRL
    Jonathan McCandless, AFRL
    Kevin Leedy, Air Force Research Laboratory, Sensors Directorate
    Michele Baldini, Leibniz-Institut für Kristallzüchtung
    Guenter Wagner, Leibniz-Institut für Kristallzüchtung
    Glen Via, AFRL
    John Blevins, Air Force Research Laboratory (AFRL), Wright-Patterson AFB, OH
    Gregg Jessen, AFRL
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  • May 11, 2022 // 11:40am

    8.3 Device Figure of Merit Performance of Scaled Gamma-Gate β-Ga2O3 MOSFETs

    Kyle Liddy, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
    Ahmad Islam, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
    Jeremiah Williams, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
    Dennis Walker, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
    Neil Moser A., Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,
    Kelson Chabak, Air Force Research Laboratory, Sensors Directorate
    Andrew Green, Air Force Research Laboratory, Sensors Directorate
    Daniel M. Dryden, KBR, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
    Nicholas P. Sepelak, KBR, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
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  • 7.3.2023 Scaled ?-Ga2O3 MOSFETs with Pulsed Laser Deposition-Regrown Ohmics

    Daniel M. Dryden, KBR, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
    Hyung Min Jeon, KBR Inc.,
    Kyle Liddy, Air Force Research Laboratory
    Ahmad Islam, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
    Dennis E. Walker Jr., Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,
    Jeremiah C. Williams, Air Force Research Laboratory, Sensors Directorate
    Nicholas P. Sepelak, KBR, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
    Nolan S. Hendricks, Air Force Research Laboratory, Sensors Directorate
    Kevin Leedy, Air Force Research Laboratory, Sensors Directorate
    Kelson Chabak, Air Force Research Laboratory, Sensors Directorate
    Andrew J. Green, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,

    7.3.2023 CSMantechExtendedAbstract4