Enrico Brusaterra
Ferdinand-Braun-Institut (FBH)
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9.3.2023 Drift Region Epitaxy Development and Characterization for High Blocking Strength and Low Specific Resistance in Vertical GaN Based Devices
Eldad Bahat Treidel, Ferdinand-Braun-Institut (FBH)Frank Brunner, Ferdinand-Braun-Institut (FBH)Enrico Brusaterra, Ferdinand-Braun-Institut (FBH)Mihaela Wolf, Ferdinand-Braun-Institut (FBH)Andreas Thies, Ferdinand-Braun-InstitutJ. Würfl, Ferdinand-Braun-Institut (FBH)Oliver Hilt, Ferdinand-Braun-Institut (FBH) -
4.1.4.2024 Wafer Bow Tuning with Stealth Laser Patterning for Vertical High Voltage Devices with Thick GaN Epitaxy on Sapphire Substrates
Enrico Brusaterra, Ferdinand-Braun-Institut (FBH)Eldad Bahat Treidel, Ferdinand-Braun-Institut (FBH)Alexander Külberg, Ferdinand-Braun-Institut (FBH)Frank Brunner, Ferdinand-Braun-Institut (FBH)Mihaela Wolf, Ferdinand-Braun-Institut (FBH)Oliver Hilt, Ferdinand-Braun-Institut (FBH) -
2A.2 – Vertical GaN Trench MOSFETs with HfO2 / Al2O3 Layered Gate Dielectric
Enrico Brusaterra, Ferdinand-Braun-Institut (FBH)Eldad Bahat Treidel, Ferdinand-Braun-Institut (FBH)P. Paul, Ferdinand-Braun-Institut (FBH)I. Ostermay, Ferdinand-Braun-Institut (FBH)F. Brunner, Ferdinand-Braun-InstitutO. Hilt, Ferdinand-Braun-Institut (FBH)Abstract
In this study, vertical GaN trench MOSFETs were fabricated utilizing a novel gate dielectric composed of hafnium oxide (HfO₂) layered with aluminum oxide (Al₂O₃) to enhance device performance compared to those employing Al₂O₃ alone. The transistors incorporating the HfO₂ / Al₂O₃ layered gate dielectric exhibited up to three times increase in forward current, five times enhancement in gate breakdown voltage and significantly reduced threshold voltage shift induced by gate forward voltage stress, relative to devices with an Al₂O₃-only gate dielectric. Furthermore, the improved gate structure resulted in higher channel mobility (~11.1 cm²/Vs) and a reduced ON-state resistance (3.1 ± 0.6 mΩ·cm²).