In this work fabrication of MISCAP structures was achieved on n-type gallium nitride using atomic layer deposited silicon nitride as the dielectric layer and sputtered ruthenium contacts. Preliminary values extracted from C-f data suggests very high capacitance densities up to 3.18 μF∙cm-2 and very high accumulation-mode field effect mobility, as high as 325 cm2V-1s-1 at a bias voltage of 2.5 V.
Gem Shoute
University of Alberta
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Low-Voltage and Low-Cost ZnO Based Ultra-Thin-Film Transistors
Download PaperGem Shoute, University of AlbertaAlex Ma, University of AlbertaAmir Afshar, University of Alberta -
High Breakdown Voltage ZnO Thin Film Transistors Grown by Low Temperature Atomic Layer Deposition
Download PaperAlex Ma, University of AlbertaAmir Afshar, University of AlbertaGem Shoute, University of AlbertaKenneth Cadien, University of AlbertaDouglas Barlage, University of Alberta -
Plasma Enhanced Atomic Layer Deposited Silicon Nitride on GaN MISCAPs with High Charge and Mobility
Ken Cadien, University of AlbertaEric Milburn, University of AlbertaAlex Ma, University of AlbertaGem Shoute, University of AlbertaDoug Barlage, University of AlbertaDownload Paper