NGMS reports the maturation of a novel GaN based 3D transistor with state of the art RF switch performance, named the SLCFET (Super Lattice Castellated Field Effect Transistor), with an RF switch FOM greater than 1.8 THz. The configured process has undergone reliability qualification for production.
Productization of the Superlattice Castellated Field Effect TransistorJustin Parke, Northrop Grumman Mission SystemsI. Wathuthanthri, Northrop Grumman (MS), Linthicum, MDKen Nagamatsu, Northrop Grumman Mission SystemsJosephine Chang, Northrop Grumman Mission SystemsGeorges Siddiqi, HRL LaboratoriesR. Lewis, Northrop Grumman (MS), Linthicum, MDRobert Howell, Northrop Grumman Mission SystemsDownload Paper