Georges Siddiqi

HRL Laboratories

  • Productization of the Superlattice Castellated Field Effect Transistor

    Justin Parke, Northrop Grumman Mission Systems
    I. Wathuthanthri, Northrop Grumman (MS), Linthicum, MD
    Ken Nagamatsu, Northrop Grumman Mission Systems
    Josephine Chang, Northrop Grumman Mission Systems
    Georges Siddiqi, HRL Laboratories
    R. Lewis, Northrop Grumman (MS), Linthicum, MD
    Robert Howell, Northrop Grumman Mission Systems

    NGMS reports the maturation of a novel GaN based 3D transistor with state of the art RF switch performance, named the SLCFET (Super Lattice Castellated Field Effect Transistor), with an RF switch FOM greater than 1.8 THz. The configured process has undergone reliability qualification for production.

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  • 3B.2 – A Fabrication Process for Airbox Encapsulation of T-Gates

    Georges Siddiqi, HRL Laboratories
    D. Berkoh, HRL Laboratories
    L. Cazares, HRL Laboratories
    A. Chao, HRL Laboratories

    3B.2 Final.2025

    Abstract
    A fabrication process for encapsulating T-gates with a robust SiN/SiO2 airbox has been developed at HRL, allowing for further passivation layers to be deposited, without creating additional parasitic capacitances that would degrade radio frequency (RF) performance of devices. This process has been demonstrated and validated on HRL’s T3 GaN devices, maintaining fT/fMAX after SiN and SiO2 coverage of the entire transistor. This robust inorganic airbox can be either used to enable wafer-level passivation of inorganic materials for complex BEOL fabrication and/or addition of moisture barrier layers to improve device reliability – all without altering device performance.