Guido Groeseneken

  • Integration of GaN Power ICs on 200 mm Engineered Substrates

    Stefaan Decoutere, Imec, Leuven, Belgium
    Xiangdong Li, imec
    Xiangdong Li, KU Leuven
    Karen Geens, imec, Leuven, Belgium
    Dirk Wellekens, imec
    Ming Zhao, imec
    Alessandro Magnani, imec
    Nooshin Amirifar, imec
    Benoit Bakeroot, imec, Leuven, Belgium and CMST, imec & Ghent University, Ghent, Belgium
    Shuzhen You, imec
    Dirk Fahle, AIXTRON SE
    Herwig Hahn, AIXTRON SE
    Michael Heuken, AIXTRON SE
    Vlad Odnoblyudov, QROMIS, USA
    Ozgur Aktas, QROMIS, USA
    Cem Basceri, QROMIS, USA
    Denis Marcon, imec
    Guido Groeseneken, KU Leuven
    Guido Groeseneken, imec

    GaN power ICs on engineered substrates of Qromis substrate technology (QST®) are promising for future power applications thanks to the reduced parasitics, thermally matched substrate of poly-AlN, high thermal conductivity, high mechanical yield in combination with thick GaN buffer layers. In this work, we will elaborate in detail on epitaxy, integration, and trench isolation. Electrical characterizations show that the GaN buffer bear a breakdown voltage of > 650 V under the criterion of 10 μA/mm2 leakage current at 150 °C. The fabricated 36 mm power HEMTs with LGD of 16 µm show a high threshold voltage of 3.1 V and a low OFF-state drain leakage of <1 µA/mm until 650 V. The horizontal trench isolation breakdown voltage exceeds 850 V. The device dispersion is well controlled within 20% over full temperature and bias range. Finally, GaN power ICs on this platform are demonstrated.

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