Hee Jin Kim

Georgia Institute of Technology
  • GaN/InGaN Heterojunction Bipolar Transistors with Collector Current Density > 20 kA/cm2

    Yun Zhang, Institute of Semiconductors, Chinese Academy of Sciences, Beijing
    Yi-Che Lee, Georgia Institute of Technology
    Zachary Lochner, Georgia Institute of Technology
    Hee Jin Kim, Georgia Institute of Technology
    Jae-Hyun Ryou, Georgia Institute of Technology
    Russell D. Dupuis, Student Presentation