Hogeun Lee

Wavice Inc.,
  • May 10, 2022 // 5:30pm

    4.5 Electrical characteristics of Wavice GaN HEMT on 4” SiC with 0.2 μm gate process for X- and Ku- band applications

    Min Han, Wavice Inc.
    Byoungchul Jun, Wavice Inc.
    Seokgyu Choi, Wavice Inc.
    Jihun Kwon, Wavice Inc.
    Chulsoon choi, Wavice Inc.
    Sangmin Lee, Wavice Inc.: Now with Global Communication Semiconductors LLC, Torrance, CA
    Junhyeok Lee, Wavice Inc.,
    Kyeongjae Lee, Wavice Inc.,
    Hankyul Ji, Wavice Inc.,
    Hogeun Lee, Wavice Inc.,
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  • May 10, 2022 // 2:50pm

    3.3 3.8 GHz 20W Compact 2 stage GaN HEMT Power Amplifier using IPD on HPSI SiC substrate

    Jinman Jin, Wavice Inc.
    Byoungchul Jun, Wavice Inc.
    Chulsoon choi, Wavice Inc.
    Seokgyu Choi, Wavice Inc.
    Min Han, Wavice Inc.
    Myoungkeun Song, Wavice Inc.
    Jihun Kwon, Wavice Inc.
    Myungsoo Park, Wavice Inc.,
    Sangmin Lee, Wavice Inc.
    Hogeun Lee, Wavice Inc.,
    Inseop Kim, Wavice Inc.,
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