A low- Magnesium (Mg) out-diffusion normally off p-GaN gated AlGaN/GaN high-electron-mobility transistor (HEMT) was developed using a low-temperature laser activation technique. Conventionally, during the actual p-GaN layer activation procedure, Mg out-diffuses into the AlGaN barrier and GaN channel at high temperatures. In addition, the Al of the AlGaN barrier layer is injected into GaN to generate alloy scattering and to suppress current density. In this study, the GaN doped Mg layer (Mg:GaN)was activated using short-wavelength Nd:YAG pulse laser annealing, and a conventional thermal activation device was processed for comparison. The results demonstrated that the laser activation technique in p-GaN HEMT suppressed the Mg out-diffusion-induced leakage current and trapping effect and enhanced the current density and breakdown voltage. Therefore, using this novel technique, a high and active Mg concentration and a favorable doping confinement can be obtained in the p-GaN layer to realize a stable enhancement-mode operation.
Chang Gung University
6.2 High Performance Normally-Off Operation p-GaN Gate HEMT with Composited Barriers Structure DesignYi-Sheng Chang, Chang Gung UniversityBo-Hong Li, Chang Gung UniversityHsiang-Chun Wang, Chang Gung UniversityHsien-Chin Chiu, Chang Gung UniversityRong Xuan, Technology Development Division, Episil-Precision Inc, TaiwanChih-Wei Hu, Technology Development Division, Episil-Precision Inc, TaiwanJung-Ruey Tsai, Department of Photonics and Communication Engineering, Asia University, Taiwan
The Improvement of Mg Out-diffusion in Normally-off p-GaN Gate HEMT Using Pulsed Laser Activation TechniqueChong Rong Haung, Chang Gung UniversityHsien-Chin Chiu, Chang Gung UniversityChia-Hao Liu, Chang Gung UniversityHsiang-Chun Wang, Chang Gung UniversityChao-Wei Chiu, Chang Gung UniversityDownload Paper
12.3 The Demonstration and Characterization of In-situ SiNx/AlGaN/GaN HEMT on 6-inch Silicon on Insulator (SOI) SubstrateHsien-Chin Chiu, Chang Gung UniversityHao-Yu Wang, Institute of Semiconductors, Chinese Academy of Sciences; University of Chinese Academy of SciencesLi-Yi Peng, Chang Gung UniversityHsiang-Chun Wang, Chang Gung UniversityYuan-Hsiang Cheng
12.4 Investigation of InAlN/GaN Schottky Barrier Diode (SBD) on 6-inch SOI substrateHsien-Chin Chiu, Chang Gung UniversityLi-Yi Peng, Chang Gung UniversityHsiang-Chun Wang, Chang Gung UniversityHou-Yu Wang, Chang Gung UniversityJen-Inn Chyi, National Central University
8.4.2021 Low Off-State Leakage Current Normally Off p-GaN Gate HEMT Using the Al0.5Ga0.5N Etching Stop Layer DesignHsiang-Chun Wang, Chang Gung UniversityHsien-Chin Chiu, Chang Gung UniversityHsuan-Ling Kao, Chang Gung UniversityDownload Paper
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