A low- Magnesium (Mg) out-diffusion normally off p-GaN gated AlGaN/GaN high-electron-mobility transistor (HEMT) was developed using a low-temperature laser activation technique. Conventionally, during the actual p-GaN layer activation procedure, Mg out-diffuses into the AlGaN barrier and GaN channel at high temperatures. In addition, the Al of the AlGaN barrier layer is injected into GaN to generate alloy scattering and to suppress current density. In this study, the GaN doped Mg layer (Mg:GaN)was activated using short-wavelength Nd:YAG pulse laser annealing, and a conventional thermal activation device was processed for comparison. The results demonstrated that the laser activation technique in p-GaN HEMT suppressed the Mg out-diffusion-induced leakage current and trapping effect and enhanced the current density and breakdown voltage. Therefore, using this novel technique, a high and active Mg concentration and a favorable doping confinement can be obtained in the p-GaN layer to realize a stable enhancement-mode operation.
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6.2 High Performance Normally-Off Operation p-GaN Gate HEMT with Composited Barriers Structure Design
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The Improvement of Mg Out-diffusion in Normally-off p-GaN Gate HEMT Using Pulsed Laser Activation Technique
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12.3 The Demonstration and Characterization of In-situ SiNx/AlGaN/GaN HEMT on 6-inch Silicon on Insulator (SOI) Substrate
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12.4 Investigation of InAlN/GaN Schottky Barrier Diode (SBD) on 6-inch SOI substrate
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8.4.2021 Low Off-State Leakage Current Normally Off p-GaN Gate HEMT Using the Al0.5Ga0.5N Etching Stop Layer Design
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18.16.2023 Electrical and Thermal Performance Analysis of AlGaN/GaN HEMT without Voltage-Blocking Buffer Layer Design
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4.4.2021 Monolithically Integrated GaN Power and RF ICs on 150mm Poly-AlN for Envelope Tracking Power Amplifier Applications
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The Characteristics of 6-inch GaN on Si RF HEMT with High Isolation Composited Buffer Layer Design
Download PaperIn this study, a 50-nm Al0.05Ga0.95N back barrier (BB) layer was used in an AlGaN/GaN high-electron-mobility transistor between the two-dimensional electron gas channel and Fe-doped/C-doped buffer layers. This BB layer can reduce the channel layer. The BB layer is affected by doped carriers in the buffer layer and the conduction energy band between the channel and the buffer layers. The Ion/Ioff ratio of the BB device was 3.43 × 105 and the ratio for the device without BB was 1.91 × 103. Lower leakage currents were obtained in the BB device because of the higher conduction energy band. The 0.25-μm gate length device with the BB exhibited a high current gain cutoff frequency of 26.9 GHz and power gain cutoff frequency of 54.7 GHz.
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May 12, 2022 // 3:20pm
18.15 Bilayer N-metal Lift-off Process on Thick DBRs Mesa for Low-Threshold VCSELs
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May 10, 2022 // 3:20pm
18.16 Hole Injection Effect and Dynamic Characteristics Analysis of Normally-Off p-GaN HEMT with AlGaN Cap layer on Low Resistivity SiC substrate
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5.6.2021 High Thermal Dissipation of Normally off p-GaN Gate AlGaN/GaN HEMTs on 6- inch N-doped Low Resistivity SiC Substrate
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18.10.2023 RF and Power Characteristics of AlGaN/AlN/GaN HEMTs on Mn-Doped Freestanding GaN substrate
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