Hyowon Yoon

Kumoh National Institute of Technology
  • May 12, 2022 // 3:20pm

    18.11 Prevention of 1.2 kV SiC MOSFET from Punch-through Phenomenon by Self-align Channel Process

    Ogyun Seok, Korea Electrotechnology Research Institute
    Hyowon Yoon, Kumoh National Institute of Technology
    Sua Choi, Kumoh National Institute of Technology
    Yeongeun Park, Kumoh National Institute of Technology
    Hojun Lee, Pusan National University of Korea
    Jeehun Jeong, Pusan National University of Korea

    Student Presentation

    Abstract

    Download Paper