Hyowon Yoon

Kumoh National Institute of Technology
  • May 12, 2022 // 3:20pm

    18.11 Prevention of 1.2 kV SiC MOSFET from Punch-through Phenomenon by Self-align Channel Process

    Ogyun Seok, Kumoh National Institute of Technology
    Hyowon Yoon, Kumoh National Institute of Technology
    Sua Choi, Kumoh National Institute of Technology
    Yeongeun Park, Kumoh National Institute of Technology
    Hojun Lee, Pusan National University of Korea
    Jeehun Jeong, Pusan National University of Korea

    Student Presentation

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  • 12.4.2023 Analysis of the effects of Gamma-ray irradiation on SiC MOSFETs

    Chaeyun Kim, Kumoh National Institute of Technology
    Hyowon Yoon, Kumoh National Institute of Technology
    Yeongeun Park, Kumoh National Institute of Technology
    Dong-Seok Kim, Korea Atomic Energy Research Institute, Republic of Korea
    Ogyun Seok, Kumoh National Institute of Technology

    12.4.2023 CS_MANTECH-Full-Paper_edited

  • 18.13.2023 Design and Optimization of 1.2 kV SiC Trench MOSFETs Using a Tilted Ion Implantation Process for High Breakdown Voltage

    Yeongeun Park, Kumoh National Institute of Technology
    Hyowon Yoon, Kumoh National Institute of Technology
    Chaeyun Kim, Kumoh National Institute of Technology
    Gyuhyeok Kang, Kumoh National Institute of Technology
    Ogyun Seok, Kumoh National Institute of Technology

    18.13.2023 Park_v2 final

  • 11.2.5.2024 Characterization of 1.2 kV SiC Trench MOSFETs with Buried p+ Layers Using a Double-Pulse Circuit

    Yeongeun Park, Kumoh National Institute of Technology
    Gyuhyeok Kang, Kumoh National Institute of Technology
    Sangyeob Kim, Kumoh National Institute of Technology
    Hyowon Yoon, Kumoh National Institute of Technology
    Soontak Kwon, KEC, Republic of Korea
    Ogyun Seok, Kumoh National Institute of Technology
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  • 12.0.5.2024 Junction termination extensions using P-type epitaxial growth layers for 3.3 kV SiC PiN diodes

    Sangyeob Kim, Kumoh National Institute of Technology
    Hyowon Yoon, Kumoh National Institute of Technology
    Chaeyun Kim, Kumoh National Institute of Technology
    Yeongeun Park, Kumoh National Institute of Technology
    Gyuhyeok Kang, Kumoh National Institute of Technology
    Ogyun Seok, Kumoh National Institute of Technology
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  • 12.0.6.2024 Improving the Surge Characteristics of SiC MOSFETs by Using Poly-Si SBDs

    Gyuhyeok Kang, Kumoh National Institute of Technology
    Yeongeun Park, Kumoh National Institute of Technology
    Hyowon Yoon, Kumoh National Institute of Technology
    Chaeyun Kim, Kumoh National Institute of Technology
    Sangyeob Kim, Kumoh National Institute of Technology
    Ogyun Seok, Kumoh National Institute of Technology
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