I. Ostermay

Ferdinand-Braun-Institut (FBH)

  • 12.4 Iridium Plug Technology for AlGaN/GaN HEMT Short-Gate Fabrication

    Konstantin Osipov, Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH)
    Richard Lossy, Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH),
    Paul Kurpas, Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH),
    Sergey Chevtchenko, Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH)
    I. Ostermay, Ferdinand-Braun-Institut (FBH)
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  • 3.3 Novel approach for ED transistors integration in GaN HEMT technology

    Konstantin Y Osipov, Ampleon Netherlands B.V.
    I. Ostermay, Ferdinand-Braun-Institut (FBH)
    Frank Brunner, Ferdinand-Braun-Institut (FBH)
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  • 10.3.2023 Optimization of Iridium RF-Sputter Process for AlGaN/GaN-based HEMT Gate Technology

    I. Ostermay, Ferdinand-Braun-Institut (FBH)
    Sten Seifert, Ferdinand-Braun-Institut (FBH)
    Olaf Krueger, Ferdinand-Braun-Institut (FBH)

    10.3.2023 Ostermay final

  • 5.3.2021 Analysis of GaN-HEMT DC-Characteristic Alterations by Gate Encapsulation Layer

    Hossein Yazdani, Ferdinand-Braun-Institut,
    Serguei Chevtchenko, Ferdinand-Braun-Institut,
    Joachim Würfl, Ferdinand-Braun-Institut
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  • BCB Encapsulation for High Power AlGaN/GaN-HFET Technology

    P. Kurpas, Ferdinand-Braun-Institut
    O. Bengtsson, Ferdinand-Braun-Institut
    S. A. Chevtchenko, Ferdinand-Braun-Institut (FBH)
    R. Zhytnytska, Ferdinand-Braun-Institut
    W. Heinrich
    J. Würfl, Ferdinand-Braun-Institut (FBH)
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  • 11.2.1.2024 Defect Reduction and Yield Improvement of MIM Capacitors

    S. A. Chevtchenko, Ferdinand-Braun-Institut (FBH)
    I. Ostermay, Ferdinand-Braun-Institut (FBH)
    S. Troppenz, Ferdinand-Braun-Institut (FBH)
    J. Würfl, Ferdinand-Braun-Institut (FBH)
    O. Hilt, Ferdinand-Braun-Institut (FBH)
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