This work focuses on evaluating and demonstrating channeled p-type and n-type implantations in silicon carbide in a repeatable mass-production environment. Range increase of about 3X is observed using channeled conditions as opposed to normal incident conditions for both Aluminum and Phosphorous. The various advantages enabled by this technology for advanced device designs are highlighted. Super-junction devices targeting the same voltage range can be fabricated using 1 or 2 lesser epitaxial regrowth layers.
ON Semiconductor CZ
P-type and N-type Channeling Ion Implantation of SiC and Implications for Device Design and FabricationTakashi Kuroi, Nissin Ion Equipment Inc.Hrishikesh Das, ON Semiconductor USASwapna Sunkari, ON Semiconductor USAJoshua Justice, ON Semiconductor USARoman Malousek, ON Semiconductor CZJan Chochol, ON Semiconductor CZRyota Wada, Nissin Ion Equipment Inc.Download Paper