Joachim Würfl

Ferdinand-Braun-Institut

  • 5.3.2021 Analysis of GaN-HEMT DC-Characteristic Alterations by Gate Encapsulation Layer

    Hossein Yazdani, Ferdinand-Braun-Institut,
    Serguei Chevtchenko, Ferdinand-Braun-Institut,
    Ina Ostermay, Ferdinand-Braun-Institut
    Joachim Würfl, Ferdinand-Braun-Institut

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