Joachim Würfl

Ferdinand-Braun-Institut

  • 5.3.2021 Analysis of GaN-HEMT DC-Characteristic Alterations by Gate Encapsulation Layer

    Hossein Yazdani, Ferdinand-Braun-Institut,
    Serguei Chevtchenko, Ferdinand-Braun-Institut,
    Joachim Würfl, Ferdinand-Braun-Institut

    [embeddoc url=”http://csmantech.org/wp-content/uploads/Digest/Digests-2021/5.3.2021_18032021_CS_MANTECH_Yazdani.pdf” download=”all” viewer=”google”]

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  • 9.3.2023 Drift Region Epitaxy Development and Characterization for High Blocking Strength and Low Specific Resistance in Vertical GaN Based Devices

    Eldad Bahat Treidel, Ferdinand-Braun-Institut (FBH)
    Frank Brunner, Ferdinand-Braun-Institut (FBH)
    Enrico Brusaterra, Ferdinand-Braun-Institut (FBH)
    Mihaela Wolf, Ferdinand-Braun-Institut (FBH)
    Andreas Thies, Ferdinand-Braun-Institut
    J. Würfl, Ferdinand-Braun-Institut (FBH)
    Oliver Hilt, Ferdinand-Braun-Institut (FBH)

    9.3.2023_Treidel