Joachim Würfl

  • 5.3.2021 Analysis of GaN-HEMT DC-Characteristic Alterations by Gate Encapsulation Layer

    Hossein Yazdani, Ferdinand-Braun-Institut,
    Serguei Chevtchenko, Ferdinand-Braun-Institut,
    Joachim Würfl, Ferdinand-Braun-Institut
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  • 9.3.2023 Drift Region Epitaxy Development and Characterization for High Blocking Strength and Low Specific Resistance in Vertical GaN Based Devices

    Eldad Bahat Treidel, Ferdinand-Braun-Institut (FBH)
    Frank Brunner, Ferdinand-Braun-Institut (FBH)
    Enrico Brusaterra, Ferdinand-Braun-Institut (FBH)
    Mihaela Wolf, Ferdinand-Braun-Institut (FBH)
    Andreas Thies, Ferdinand-Braun-Institut
    J. Würfl, Ferdinand-Braun-Institut (FBH)
    Oliver Hilt, Ferdinand-Braun-Institut (FBH)