This work characterizes the effects of gate-length (LG) scaling in a self-aligned gate (SAG) β-Ga2O3 MOSFET process. Additional performance gains are expected by extending the SAG process from large LG to sub-micrometer dimensions. This data incorporates LG scaling down to 200 nm to improve device performance in Ga2O3 SAG MOSFETs using a stepper lithography process to define sub-micron gate lengths.
Kelson Chabak
Air Force Research Laboratory, Sensors Directorate
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Self-Aligned Refractory Metal Gate Scaling in β-Ga2O3 MOSFETs
Kelson Chabak, Air Force Research Laboratory, Sensors DirectorateKyle Liddy, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USAAndrew Green, Air Force Research Laboratory, Sensors DirectorateThaddeus Asel, Air Force Research Laboratory, Wright Patterson AFB, OH, USAShin Mou, Air Force Research Laboratory, Wright Patterson AFB, OHKevin Leedy, Air Force Research Laboratory, Sensors DirectorateDonald Dorsey, Air Force Research Laboratory Materials and Manufacturing DirectorateDownload Paper -
14.4 Device Development of Gallium Oxide MOSFETs Grown by MOVPE on Native Substrates for High-Voltage Applications
Neil Moser A., Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,Kelson Chabak, Air Force Research Laboratory, Sensors DirectorateAndrew Green, Air Force Research Laboratory, Sensors DirectorateDennis Walker, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USAStephen Tetlak, AFRLEric Heller, AFRLAntonio Crespo, Air Force Research Laboratory, Sensors DirectorateRobert Fitch, AFRLJonathan McCandless, AFRLKevin Leedy, Air Force Research Laboratory, Sensors DirectorateMichele Baldini, Leibniz-Institut für KristallzüchtungGuenter Wagner, Leibniz-Institut für KristallzüchtungGlen Via, AFRLJohn Blevins, Air Force Research Laboratory (AFRL), Wright-Patterson AFB, OHGregg Jessen, AFRL -
3.1 Demonstration of X-band T/R MMIC using AFRL AlGaN/GaN MMIC Process
James Gillespie, Air Force Research LaboratoryKelson Chabak, Air Force Research Laboratory, Sensors DirectorateAntonio Crespo, Air Force Research Laboratory, Sensors DirectorateRobert Fitch, AFRLDarren Ferwalt, Cobham Advanced Electronic SystemsDavid Frey, Cobham Advanced Electronic SystemsJeremy Gassmann, Cobham Advanced Electronic SystemsMark Walker, Cobham Advanced Electronic SolutionsRyan Gilbert, Wyle LaboratoriesDennis Walker Jr, Air Force Research Laboatory, Sensors DirectorateGlen Via, AFRLA.J. GreenK.D. LeedyR.K. MongiaB.S. PolingK.A. SutherlinS.E. TetlakJ.P. TheimerG.H. Jessen -
May 11, 2022 // 11:40am
8.3 Device Figure of Merit Performance of Scaled Gamma-Gate β-Ga2O3 MOSFETs
Kyle Liddy, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USAAhmad Islam, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USAJeremiah Williams, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USADennis Walker, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USANeil Moser A., Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,Kelson Chabak, Air Force Research Laboratory, Sensors DirectorateAndrew Green, Air Force Research Laboratory, Sensors DirectorateDaniel M. Dryden, KBR, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USANicholas P. Sepelak, KBR, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USADownload PaperLoading... -
May 11, 2022 // 2:40pm
10.3 Optimization of GaN RF Switch Device Performance using AFRL GaN140 MMIC Process
Gary Hughes, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OHE. Werner, KBR, Wright-Patterson AFBNeil Moser A., Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,Dennis E. Walker Jr., Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,Andrew J. Green, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,Ahmad Islam, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USAKelson Chabak, Air Force Research Laboratory, Sensors DirectorateMichael Schuette, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,John L. Ebel, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,Download PaperLoading... -
3.5.2021 LOL 1000 Liftoff Resist as an Antireflective Coating for MMIC Electroplating
Elizabeth Werner, KBRDaniel Brooks, Air Force Research LaboratoryKyle Liddy, Air Force Research LaboratoryRobert Fitch Jr., Air Force Research LaboratoryJames Gillespie, Air Force Research LaboratoryDennis Walker Jr., Air Force Research LaboratoryAntonio Crespo, Air Force Research Laboratory, Sensors DirectorateDaniel M. Dryden, KBRAndrew Green, Air Force Research Laboratory, Sensors DirectorateKelson Chabak, Air Force Research Laboratory, Sensors DirectorateDownload PaperLoading... -
12.2.2023 High Temperature Studies of 140 nm T-gate AlGaN/GaN HEMT Devices
Ahmad Islam, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USAAdam Miesle, KBR Inc.Nicholas P. Sepelak, KBR, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USAHanwool Lee, KBR Inc.Dennis E. Walker Jr., Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,N. Miller, Air Force Research LaboratoryMatt Grupen, Air Force Research Laboratory, Sensors DirectorateKyle Liddy, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USAAntonio Crespo, Air Force Research Laboratory, Sensors DirectorateGary Hughes, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OHWenjuan Zhu, University of Illinois, UrbanaKelson Chabak, Air Force Research Laboratory, Sensors DirectorateAndrew J. Green, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,