Ma Xiaohua

Xidian University, Xi'an, China
  • May 10, 2022 // 4:50pm

    5.3 Normally-off InAlN/GaN HEMTs Fabricated by Atomic Layer Etching Gate Recess

    Siyu Liu, Xidian University, Xi'an, China
    Ma Xiaohua, Xidian University, Xi'an, China
    Jiejie Zhu, Xidian University, Xi'an, China
    Minhan Mi, Xidian University
    Jingshu Guo, Xidian University, Xi'an, China
    Yue Hao, Xidian University, Xi'an, China

    Student Presentation

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  • May 11, 2022 // 3:00pm

    10.4 AlN/GaN/InGaN Coupling Channel HEMTs with Improved SS Performance

    Yue Hao, Xidian University, Xi'an, China
    Hao Lu, Xidian University, Xi'an, China
    Bin Hou, Xidian University, Xi'an, China
    Ling Yang, Xidian University, Xi'an, China
    Ma Xiaohua, Xidian University, Xi'an, China

    Student Presentation

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  • May 19, 2022 // 2:10pm

    17.3 Regrown Ohmic contact of InAlN/GaN HEMTs based on MOCVD

    Jingshu Guo, Xidian University, Xi'an, China
    Jiejie Zhu, Xidian University, Xi'an, China
    Siyu Liu, Xidian University, Xi'an, China
    Jiahao Xu, Xidian University, Xi'an, China
    X. Zhao, Massachusetts Institute of Technology
    Ma Xiaohua, Xidian University, Xi'an, China

    Student Presentation

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