Ma Xiaohua
Xidian University, Xi'an, China
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May 10, 2022 // 4:50pm
5.3 Normally-off InAlN/GaN HEMTs Fabricated by Atomic Layer Etching Gate Recess
Download PaperSiyu Liu, Xidian University, Xi'an, ChinaMa Xiaohua, Xidian University, Xi'an, ChinaJiejie Zhu, Xidian University, Xi'an, ChinaMinhan Mi, Xidian UniversityJingshu Guo, Xidian University, Xi'an, ChinaYue Hao, Xidian University, Xi'an, China -
May 11, 2022 // 3:00pm
10.4 AlN/GaN/InGaN Coupling Channel HEMTs with Improved SS Performance
Yue Hao, Xidian University, Xi'an, ChinaHao Lu, Xidian University, Xi'an, ChinaBin Hou, Xidian University, Xi'an, ChinaLing Yang, Xidian University, Xi'an, ChinaMa Xiaohua, Xidian University, Xi'an, ChinaDownload PaperStudent Presentation
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May 19, 2022 // 2:10pm
17.3 Regrown Ohmic contact of InAlN/GaN HEMTs based on MOCVD
Jingshu Guo, Xidian University, Xi'an, ChinaJiejie Zhu, Xidian University, Xi'an, ChinaSiyu Liu, Xidian University, Xi'an, ChinaJiahao Xu, Xidian University, Xi'an, ChinaX. Zhao, Massachusetts Institute of TechnologyMa Xiaohua, Xidian University, Xi'an, China