Manikant Singh

University of Bristol
  • May 02, 2019 // 10:30am – 10:50am

    15.1 Misinterpretation of Drain Transient Spectroscopy in GaN HEMTs: Explanation using a floating buffer model

    Manikant Singh, University of Bristol
    Serge Karboyan, Nexperia. Manchester, UK
    Hareesh Chandrasekar, Center for Device Thermography and Reliability, University of Bristol, Bristol, UK
    Trevor Martin, IQE Europe, St Mellons, Cardiff, UK
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  • 5.2 Device-to-device coupling via lateral conduction within the epitaxy in C-doped AlGaN/GaN HEMTs

    Manikant Singh, University of Bristol
    Serge Karboyan, Nexperia. Manchester, UK
    Kean Boon Lee, University of Sheffield
    Zaffar Zaidi, University of Sheffield
    Peter Houston, University of Sheffield, Sheffield
    Martin Kuball, University of Bristol
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