O. Aktas

Sandia National Labs, Albuquerque, NM
  • March 10, 2022 // 8:45am

    13.2 Propelling the Power Electronics Revolution: 200 mm Diameter, 100 V to 1800 V and Beyond GaN-on-QST® High Volume Device Manufacturing Platform

    Cem Basceri, QROMIS, USA
    Vlad Odnoblyudov, QROMIS, USA
    O. Aktas, Sandia National Labs, Albuquerque, NM
    Walter Wohlmuth, Vanguard International Semiconductor Corporation, Taiwan
    Karen Geens, imec, Leuven, Belgium
    Benoit Bakeroot, imec, Leuven, Belgium and CMST, imec & Ghent University, Ghent, Belgium
    H. Hahn, AIXTRON SE, Herzogenrath, Germany
    D. Fahle, AIXTRON SE Germany
    Stefaan Decoutere, Imec, Leuven, Belgium
    A. Vohra, imec, Leuven, Belgium
    M. Heuken, AIXTRON SE Germany

    Invited Presentation

    Loader Loading...
    EAD Logo Taking too long?

    Reload Reload document
    | Open Open in new tab

    Download [8.31 MB]

    Download Paper

  • 9.4.2023 Scalable Manufacturing of Planar, Large-Area 1.2kV and 3.3kV Vertical GaN PiN Diodes

    Alan Jacobs, U.S. Naval Research Laboratory, Washington DC
    Mona Ebrish, NRC Postdoc Fellow Residing at the U.S. Naval Research Laboratory
    James Gallagher, U.S. Naval Research Laboratory
    Marko J. Tadjer, U.S. Naval Research Laboratory
    James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
    Jennifer K. Hite, Naval Research Laboratory
    N. Mahadik, U.S. Naval Research Laboratory
    Robert Kaplar, Sandia National Labs, Albuquerque, NM
    O. Aktas, Sandia National Labs, Albuquerque, NM

    9.4.2023_Anderson