Ogyun Seok

Korea Electrotechnology Research Institute
  • High-performance normally-off GaN MIS-HEMTs with dual gate insulator employing PEALD SiNx interfacial layer and RF-sputtered HfO2

    Woojin Choi, Seoul National University
    Hojin Ryu, Student Presentation Seoul National University
    Ogyun Seok, Korea Electrotechnology Research Institute
    Minseok Kim, Student Presentation Seoul National University
    Ho-Young Cha, Student Presentation Seoul National University
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  • AlGaN/GaN MOS-HEMTs using RF magnetron Sputtered SiO2 Gate Insulator and Post-Annealing Treatment

    Liang Pang, University of Illinois at Urbana-Chamapign
    Ogyun Seok, Korea Electrotechnology Research Institute
    Kevin (Kim) Kyekyoon, University of Illinois at Urbana-Chamapign
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  • 6.3 A Low Knee Voltage of 4H-SiC TSBS Employing Poly-Si/Ni Dual Schottky Contacts

    Dong Young Kim, Gyeongsang National University
    Ogyun Seok, Korea Electrotechnology Research Institute
    Himchan Park, Korea Electrotechnology Research Institute
    Wook Bahng, Korea Electrotechnology Research Institute
    Hyoung Woo Kim, Korea Electrotechnology Research Institute
    Ki Cheol Park, Gyeongsang National University
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  • May 12, 2022 // 3:20pm

    18.11 Prevention of 1.2 kV SiC MOSFET from Punch-through Phenomenon by Self-align Channel Process

    Ogyun Seok, Korea Electrotechnology Research Institute
    Hyowon Yoon, Kumoh National Institute of Technology
    Sua Choi, Kumoh National Institute of Technology
    Yeongeun Park, Kumoh National Institute of Technology
    Hojun Lee, Pusan National University of Korea
    Jeehun Jeong, Pusan National University of Korea

    Student Presentation

    Abstract

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