Student Presentation
Ogyun Seok
Korea Electrotechnology Research Institute
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High-performance normally-off GaN MIS-HEMTs with dual gate insulator employing PEALD SiNx interfacial layer and RF-sputtered HfO2
Download PaperWoojin Choi, Seoul National UniversityHojin Ryu, Student Presentation Seoul National UniversityOgyun Seok, Korea Electrotechnology Research InstituteMinseok Kim, Student Presentation Seoul National UniversityHo-Young Cha, Student Presentation Seoul National University -
AlGaN/GaN MOS-HEMTs using RF magnetron Sputtered SiO2 Gate Insulator and Post-Annealing Treatment
Download PaperLiang Pang, University of Illinois at Urbana-ChamapignOgyun Seok, Korea Electrotechnology Research InstituteKevin (Kim) Kyekyoon, University of Illinois at Urbana-Chamapign -
6.3 A Low Knee Voltage of 4H-SiC TSBS Employing Poly-Si/Ni Dual Schottky Contacts
Download PaperDong Young Kim, Gyeongsang National UniversityOgyun Seok, Korea Electrotechnology Research InstituteHimchan Park, Korea Electrotechnology Research InstituteWook Bahng, Korea Electrotechnology Research InstituteHyoung Woo Kim, Korea Electrotechnology Research InstituteKi Cheol Park, Gyeongsang National University -
May 12, 2022 // 3:20pm
18.11 Prevention of 1.2 kV SiC MOSFET from Punch-through Phenomenon by Self-align Channel Process
Ogyun Seok, Korea Electrotechnology Research InstituteHyowon Yoon, Kumoh National Institute of TechnologySua Choi, Kumoh National Institute of TechnologyYeongeun Park, Kumoh National Institute of TechnologyHojun Lee, Pusan National University of KoreaJeehun Jeong, Pusan National University of KoreaDownload Paper