Student Presentation
Ogyun Seok
Kumoh National Institute of Technology, Republic of Korea
-
High-performance normally-off GaN MIS-HEMTs with dual gate insulator employing PEALD SiNx interfacial layer and RF-sputtered HfO2
Woojin Choi, Seoul National UniversityHojin Ryu, Student Presentation Seoul National UniversityOgyun Seok, Kumoh National Institute of Technology, Republic of KoreaMinseok Kim, Student Presentation Seoul National UniversityHo-Young Cha, Student Presentation Seoul National University -
AlGaN/GaN MOS-HEMTs using RF magnetron Sputtered SiO2 Gate Insulator and Post-Annealing Treatment
Liang Pang, University of Illinois at Urbana-ChamapignOgyun Seok, Kumoh National Institute of Technology, Republic of KoreaKevin (Kim) Kyekyoon, University of Illinois at Urbana-Chamapign -
6.3 A Low Knee Voltage of 4H-SiC TSBS Employing Poly-Si/Ni Dual Schottky Contacts
Dong Young Kim, Gyeongsang National UniversityOgyun Seok, Kumoh National Institute of Technology, Republic of KoreaHimchan Park, Korea Electrotechnology Research InstituteWook Bahng, Korea Electrotechnology Research InstituteHyoung Woo Kim, Korea Electrotechnology Research InstituteKi Cheol Park, Gyeongsang National University -
May 12, 2022 // 3:20pm
18.11 Prevention of 1.2 kV SiC MOSFET from Punch-through Phenomenon by Self-align Channel Process
Ogyun Seok, Kumoh National Institute of Technology, Republic of KoreaHyowon Yoon, Kumoh National Institute of TechnologySua Choi, Kumoh National Institute of TechnologyYeongeun Park, Kumoh National Institute of TechnologyHojun Lee, Pusan National University of KoreaJeehun Jeong, Pusan National University of KoreaDownload PaperLoading...
-
12.4.2023 Analysis of the effects of Gamma-ray irradiation on SiC MOSFETs
Chaeyun Kim, Kumoh National Institute of Technology, Republic of KoreaHyowon Yoon, Kumoh National Institute of TechnologyYeongeun Park, Kumoh National Institute of TechnologyDong-Seok Kim, Korea Atomic Energy Research Institute, Republic of KoreaOgyun Seok, Kumoh National Institute of Technology, Republic of Korea -
18.13.2023 Design and Optimization of 1.2 kV SiC Trench MOSFETs Using a Tilted Ion Implantation Process for High Breakdown Voltage
Yeongeun Park, Kumoh National Institute of TechnologyHyowon Yoon, Kumoh National Institute of TechnologyChaeyun Kim, Kumoh National Institute of Technology, Republic of KoreaGyuhyeok Kang, Kumoh National Institute of TechnologyOgyun Seok, Kumoh National Institute of Technology, Republic of Korea