Ogyun Seok

Kumoh National Institute of Technology, Republic of Korea
  • High-performance normally-off GaN MIS-HEMTs with dual gate insulator employing PEALD SiNx interfacial layer and RF-sputtered HfO2

    Woojin Choi, Seoul National University
    Hojin Ryu, Student Presentation Seoul National University
    Ogyun Seok, Kumoh National Institute of Technology, Republic of Korea
    Minseok Kim, Student Presentation Seoul National University
    Ho-Young Cha, Student Presentation Seoul National University
    Download Paper
  • AlGaN/GaN MOS-HEMTs using RF magnetron Sputtered SiO2 Gate Insulator and Post-Annealing Treatment

    Liang Pang, University of Illinois at Urbana-Chamapign
    Ogyun Seok, Kumoh National Institute of Technology, Republic of Korea
    Kevin (Kim) Kyekyoon, University of Illinois at Urbana-Chamapign
    Download Paper
  • 6.3 A Low Knee Voltage of 4H-SiC TSBS Employing Poly-Si/Ni Dual Schottky Contacts

    Dong Young Kim, Gyeongsang National University
    Ogyun Seok, Kumoh National Institute of Technology, Republic of Korea
    Himchan Park, Korea Electrotechnology Research Institute
    Wook Bahng, Korea Electrotechnology Research Institute
    Hyoung Woo Kim, Korea Electrotechnology Research Institute
    Ki Cheol Park, Gyeongsang National University
    Download Paper
  • May 12, 2022 // 3:20pm

    18.11 Prevention of 1.2 kV SiC MOSFET from Punch-through Phenomenon by Self-align Channel Process

    Ogyun Seok, Kumoh National Institute of Technology, Republic of Korea
    Hyowon Yoon, Kumoh National Institute of Technology
    Sua Choi, Kumoh National Institute of Technology
    Yeongeun Park, Kumoh National Institute of Technology
    Hojun Lee, Pusan National University of Korea
    Jeehun Jeong, Pusan National University of Korea

    Student Presentation

    Loader Loading...
    EAD Logo Taking too long?

    Reload Reload document
    | Open Open in new tab

    Download [809.33 KB]

    Download Paper
  • 12.4.2023 Analysis of the effects of Gamma-ray irradiation on SiC MOSFETs

    Chaeyun Kim, Kumoh National Institute of Technology, Republic of Korea
    Hyowon Yoon, Kumoh National Institute of Technology
    Yeongeun Park, Kumoh National Institute of Technology
    Dong-Seok Kim, Korea Atomic Energy Research Institute, Republic of Korea
    Ogyun Seok, Kumoh National Institute of Technology, Republic of Korea

    12.4.2023 CS_MANTECH-Full-Paper_edited

  • 18.13.2023 Design and Optimization of 1.2 kV SiC Trench MOSFETs Using a Tilted Ion Implantation Process for High Breakdown Voltage

    Yeongeun Park, Kumoh National Institute of Technology
    Hyowon Yoon, Kumoh National Institute of Technology
    Chaeyun Kim, Kumoh National Institute of Technology, Republic of Korea
    Gyuhyeok Kang, Kumoh National Institute of Technology
    Ogyun Seok, Kumoh National Institute of Technology, Republic of Korea

    18.13.2023 Park_v2 final