Student Presentation
[embeddoc url=”https://csmantech.org/wp-content/uploads/2023/09/18.11.2022-Prevention-of-1.2-kV-SiC-MOSFET-from-punch-through-phenomenon-.pdf” download=”all”]
Ogyun Seok
Kumoh National Institute of Technology
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High-performance normally-off GaN MIS-HEMTs with dual gate insulator employing PEALD SiNx interfacial layer and RF-sputtered HfO2
Download PaperWoojin Choi, Seoul National UniversityHojin Ryu, Student Presentation Seoul National UniversityOgyun Seok, Kumoh National Institute of TechnologyMinseok Kim, Student Presentation Seoul National UniversityHo-Young Cha, Student Presentation Seoul National University -
AlGaN/GaN MOS-HEMTs using RF magnetron Sputtered SiO2 Gate Insulator and Post-Annealing Treatment
Download PaperLiang Pang, University of Illinois at Urbana-ChamapignOgyun Seok, Kumoh National Institute of TechnologyKevin (Kim) Kyekyoon, University of Illinois at Urbana-Chamapign -
6.3 A Low Knee Voltage of 4H-SiC TSBS Employing Poly-Si/Ni Dual Schottky Contacts
Download PaperDong Young Kim, Gyeongsang National UniversityOgyun Seok, Kumoh National Institute of TechnologyHimchan Park, Korea Electrotechnology Research InstituteWook Bahng, Korea Electrotechnology Research InstituteHyoung Woo Kim, Korea Electrotechnology Research InstituteKi Cheol Park, Gyeongsang National University -
May 12, 2022 // 3:20pm
18.11 Prevention of 1.2 kV SiC MOSFET from Punch-through Phenomenon by Self-align Channel Process
Ogyun Seok, Kumoh National Institute of TechnologyHyowon Yoon, Kumoh National Institute of TechnologySua Choi, Kumoh National Institute of TechnologyYeongeun Park, Kumoh National Institute of TechnologyHojun Lee, Pusan National University of KoreaJeehun Jeong, Pusan National University of KoreaDownload Paper -
12.4.2023 Analysis of the effects of Gamma-ray irradiation on SiC MOSFETs
Chaeyun Kim, Kumoh National Institute of TechnologyHyowon Yoon, Kumoh National Institute of TechnologyYeongeun Park, Kumoh National Institute of TechnologyDong-Seok Kim, Korea Atomic Energy Research Institute, Republic of KoreaOgyun Seok, Kumoh National Institute of Technology -
18.13.2023 Design and Optimization of 1.2 kV SiC Trench MOSFETs Using a Tilted Ion Implantation Process for High Breakdown Voltage
Yeongeun Park, Kumoh National Institute of TechnologyHyowon Yoon, Kumoh National Institute of TechnologyChaeyun Kim, Kumoh National Institute of TechnologyGyuhyeok Kang, Kumoh National Institute of TechnologyOgyun Seok, Kumoh National Institute of Technology -
11.2.5.2024 Characterization of 1.2 kV SiC Trench MOSFETs with Buried p+ Layers Using a Double-Pulse Circuit
Yeongeun Park, Kumoh National Institute of TechnologyGyuhyeok Kang, Kumoh National Institute of TechnologySangyeob Kim, Kumoh National Institute of TechnologyHyowon Yoon, Kumoh National Institute of TechnologySoontak Kwon, KEC, Republic of KoreaOgyun Seok, Kumoh National Institute of Technology[embeddoc url=”https://csmantech.org/wp-content/uploads/2024/06/11.2.5.2024-Characterization-of-1.2-kV-SiC-Trench-MOSFETs-with-Buried-p.pdf” download=”all”]
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12.0.6.2024 Improving the Surge Characteristics of SiC MOSFETs by Using Poly-Si SBDs
Gyuhyeok Kang, Kumoh National Institute of TechnologyYeongeun Park, Kumoh National Institute of TechnologyHyowon Yoon, Kumoh National Institute of TechnologyChaeyun Kim, Kumoh National Institute of TechnologySangyeob Kim, Kumoh National Institute of TechnologyOgyun Seok, Kumoh National Institute of Technology[embeddoc url=”https://csmantech.org/wp-content/uploads/2024/06/12.0.6.2024-Improving-the-Surge-Characteristics-of-SiC-MOSFETs-by-Using-Poly-Si-SBDs.pdf” download=”all”]