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May 11, 2022 // 12:00pm
7.4 Impact of Strain-Induced Bow on the Manufacture of VCSELs on 150mm GaAs- and Ge-Substrate Wafers
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14.2.2023 Assessment of 1.3-?m InAs QD Edge-Emitting Lasers Grown on Large Area GaAs Substrates
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18.4.2023 Characterisation Techniques for On-Wafer Testing of VCSELs in Volume Manufacture
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18.8.2023 Determining the impact of facet roughness on etched facet InP laser devices operating at telecom wavelengths, making comparisons to theoretical models.
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8.2.2.2024 QuickSELs Enabling Rapid Feedback to Epitaxy
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12.7 – Regrowth-Free 1st-Order Gratings for Photonic Integrated Circuits using Focused Ion Beam Nanofabrication and Electron Beam Lithography
Abstract
We present and compare two methods for fabricating grating structures for photonic integrated circuits. The first method uses a two-step electron beam lithography (EBL) and dry etch process, while the second uses direct milling of the grating structures using focused ion beam (FIB) nanofabrication. In both cases 1st order periodic structures with a pitch of 238 nm were successfully positioned adjacent to the ridge waveguide. Using the EBL method, a final grating depth of 10 nm was observed with an estimated coupling coefficient of 40 cm-1. Direct milling using FIB provided grating features milled to a depth of up to 350 nm, achieving maximum coupling strengths of over 200 cm-1.
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