Robert Kaplar
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May 01, 2019 // 4:50pm – 5:10pm
11.3 Extreme Temperature Operation of Ultra-Wide Bandgap AlGaN High Electron Mobility Transistors
Download PaperPatrick Carey IV, University of FloridaFan Ren, University of FloridaAlbert Baca, Sandia National LaboratoriesBrianna Klein, Sandia National LaboratoriesAndrew Allerman, Sandia National LaboratoriesAndrew Armstrong, Sandia National LaboratoriesErica Douglas, Sandia National LaboratoriesRobert Kaplar, Sandia National Labs, Albuquerque, NMPaul Kotula, Sandia National LaboratoriesStephen Pearton, University of Florida -
9.4.2023 Scalable Manufacturing of Planar, Large-Area 1.2kV and 3.3kV Vertical GaN PiN Diodes
Alan Jacobs, U.S. Naval Research LaboratoryMona Ebrish, NRC Postdoc Fellow Residing at the U.S. Naval Research LaboratoryJames Gallagher, U.S. Naval Research LaboratoryMarko J. Tadjer, U.S. Naval Research LaboratoryJames Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRLJennifer K. Hite, Naval Research LaboratoryN. Mahadik, U.S. Naval Research LaboratoryRobert Kaplar, Sandia National Labs, Albuquerque, NMO. Aktas, Sandia National Labs, Albuquerque, NM -
10.5.2023 Accuracy of Machine Learning Models on Predicting the Properties of Vertical GaN Diodes
James Gallagher, U.S. Naval Research LaboratoryMichael A. Mastro, U.S. Naval Research LaboratoryMona Ebrish, Vanderbilt University, Nashville, TNAlan Jacobs, U.S. Naval Research LaboratoryBrendan. P. Gunning, Sandia National Labs, Albuquerque, NMRobert Kaplar, Sandia National Labs, Albuquerque, NM -
3B.5 – Stability of 3.3 kV Planar GaN Diodes with Nitrogen Implanted Termination under High Temperature Reverse Bias Stressing
Alan Jacobs, U.S. Naval Research LaboratoryJames Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRLTravis J. Anderson, U.S. Naval Research LaboratoryGeoffrey M. Foster, U.S. Naval Research LaboratoryAndrew Koehler, U. S. Naval Research LaboratoryJ. C. Gallagher, U.S. Naval Research LaboratoryBrendan. P. Gunning, Sandia National Labs, Albuquerque, NMRobert Kaplar, Sandia National Labs, Albuquerque, NMKarl D. Hobart, U.S. Naval Research LaboratoryM.A. Mastro, U.S. Naval Research LaboratoryABSTRACT
Planar vertical gallium nitride devices are capable of utilizing the beneficial material properties inherent to bulk GaN without the interference of surface leakage pathways or passivation failures inherent to lateral devices, however, the stability and long-term viability of implanted termination necessitates study. Here we show stressing of 3.3kV vertical GaN diodes with nitrogen implanted termination at over 80% of the breakdown voltage and at up to 200°C for over 400 hours. Some diodes exhibit a burn-in effect with small changes to the breakdown voltage and leakage at breakdown while others exhibit robust and nearly invariant behavior to the limits of testing. Additionally, thermal stressing of a cohort of devices without bias shows an increased degradation of breakdown voltage above 300°C and differentiation of devices within the cohort beyond 350°C enabling further study of the degradation mechanisms.