Robert Kaplar

Sandia National Labs, Albuquerque, NM
  • May 01, 2019 // 4:50pm – 5:10pm

    11.3 Extreme Temperature Operation of Ultra-Wide Bandgap AlGaN High Electron Mobility Transistors

    Patrick Carey IV, University of Florida
    Fan Ren, University of Florida
    Albert Baca, Sandia National Laboratories
    Brianna Klein, Sandia National Laboratories
    Andrew Allerman, Sandia National Laboratories
    Andrew Armstrong, Sandia National Laboratories
    Erica Douglas, Sandia National Laboratories
    Robert Kaplar, Sandia National Labs, Albuquerque, NM
    Paul Kotula, Sandia National Laboratories
    Stephen Pearton, University of Florida
    Download Paper
  • 9.4.2023 Scalable Manufacturing of Planar, Large-Area 1.2kV and 3.3kV Vertical GaN PiN Diodes

    Alan Jacobs, U.S. Naval Research Laboratory, Washington DC
    Mona Ebrish, NRC Postdoc Fellow Residing at the U.S. Naval Research Laboratory
    James Gallagher, U.S. Naval Research Laboratory
    Marko J. Tadjer, U.S. Naval Research Laboratory
    James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
    Jennifer K. Hite, Naval Research Laboratory
    N. Mahadik, U.S. Naval Research Laboratory
    Robert Kaplar, Sandia National Labs, Albuquerque, NM
    O. Aktas, Sandia National Labs, Albuquerque, NM

    9.4.2023_Anderson

  • 10.5.2023 Accuracy of Machine Learning Models on Predicting the Properties of Vertical GaN Diodes

    James Gallagher, U.S. Naval Research Laboratory
    Michael A. Mastro, U.S. Naval Research Laboratory
    Mona Ebrish, Vanderbilt University, Nashville, TN
    Alan Jacobs, U.S. Naval Research Laboratory, Washington DC
    Brendan. P. Gunning, Sandia National Labs, Albuquerque, NM
    Robert Kaplar, Sandia National Labs, Albuquerque, NM

    10.5.2023_Gallagher