Sang-Kuk Kim
QSI, Cheon-An, Kyunggi-do, 31044, South Korea
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18.12.2023 Analytical model for the source resistance in advanced InxGa1-xAs/In0.52Al0.48As quantum-well high-electron-mobility transistors
Ji-Hoon Yoo, School of Electronic and Electrical Engineering, Kyungpook National UniversityJae-Hak Lee, Kyungpook National UniversityYong-Hyun Kim, QSI, Cheon-An, Kyunggi-do, 31044, South KoreaSang-Kuk Kim, QSI, Cheon-An, Kyunggi-do, 31044, South KoreaJacob Yun, QSITed Kim, QSIIn-Geun Lee, Kyungpook National UniversityDae-Hyun Kim, Kyungpook National University -
18.14.2023 A new methodology to extract saturation velocity of In0.53Ga0.47As QW HEMTs
Hyo-Jin Kim, Kyungpook National UniversityJi-Hoon Yoo, School of Electronic and Electrical Engineering, Kyungpook National UniversityWan-Soo Park, Kyungpook National UniversityHyeon-Bhin Jo, School of Electronic and Electrical Engineering, Kyungpook National UniversityIn-Geun Lee, Kyungpook National UniversityTae-Woo Kim, University of Ulsan, Ulsan, South KoreaSang-Kuk Kim, QSI, Cheon-An, Kyunggi-do, 31044, South KoreaYong-Hyun Kim, QSI, Cheon-An, Kyunggi-do, 31044, South KoreaJacob Yun, QSITed Kim, QSITakuya Tsutsumi, QSI, Cheon-An, Kyunggi-do, 31044, South KoreaHiroki Sugiyama, NTT Device Technology Laboratories, NTT Corporation, Kanagawa, JapanHideaki Matsuzaki, NTT Device Technology Laboratories, NTT Corporation, Kanagawa, JapanJae-Hak Lee, Kyungpook National UniversityDae-Hyun Kim, Kyungpook National University