GaN power ICs on engineered substrates of Qromis substrate technology (QST®) are promising for future power applications thanks to the reduced parasitics, thermally matched substrate of poly-AlN, high thermal conductivity, high mechanical yield in combination with thick GaN buffer layers. In this work, we will elaborate in detail on epitaxy, integration, and trench isolation. Electrical characterizations show that the GaN buffer bear a breakdown voltage of > 650 V under the criterion of 10 μA/mm2 leakage current at 150 °C. The fabricated 36 mm power HEMTs with LGD of 16 µm show a high threshold voltage of 3.1 V and a low OFF-state drain leakage of <1 µA/mm until 650 V. The horizontal trench isolation breakdown voltage exceeds 850 V. The device dispersion is well controlled within 20% over full temperature and bias range. Finally, GaN power ICs on this platform are demonstrated.
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Integration of GaN Power ICs on 200 mm Engineered Substrates
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March 10, 2022 // 8:45am
13.2 Propelling the Power Electronics Revolution: 200 mm Diameter, 100 V to 1800 V and Beyond GaN-on-QST® High Volume Device Manufacturing Platform
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8.1.2021 Demonstration of High-quality GaN Epitaxy on 200 mm Engineered Substrates for Vertical Power Device Fabrication
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7.5.2023 Improving the yield for GaN-on-Si HEMT devices for power applications
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