Bulk induced dynamic RON in GaN-on-Si HEMTs is a serious performance limiting instability which remains a problem even in some commercially available power switching devices. Its origin is now reasonably well understood, however until now it has not been possible to simulate it using a realistic epitaxial stack. For the first time we successfully simulate the controlled suppression of bulk dynamic RON by adding a specific model for leakage along threading dislocations. This was undertaken using a commercially available standard TCAD simulator, allowing realistic device optimization in an advanced GaN HEMT design flow.
University of Bristol
Simulation of Leakage Induced Suppression of Bulk Dynamic RON in Power Switching GaN-on-Si HEMTsMartin Kuball, University of BristolMichael Uren, University of BristolStefano Dalcanale, University of BristolFeiyuan Yang, University of BristolAhmed Nejim, Silvaco EuropeStephen Wilson, Silvaco EuropeDownload Paper