Su-Min Choi

Kyungpook National University

  • 2.5.2023 Lg = 25 nm In0.8Ga0.2As/In0.52Al0.48As High-Electron Mobility Transistors on InP Substrate with Both fT and fmax in Excess of 700 GHz

    In-Geun Lee, Kyungpook National University
    Hyeon-Bhin Jo, School of Electronic and Electrical Engineering, Kyungpook National University
    Wan-Soo Park, Kyungpook National University
    Ji-Hoon Yoo, School of Electronic and Electrical Engineering, Kyungpook National University
    Jacob Yun, QSI
    Ted Kim, QSI
    Takuya Tsutsumi, QSI, Cheon-An, Kyunggi-do, 31044, South Korea
    Hiroki Sugiyama, NTT Device Technology Laboratories, NTT Corporation, Kanagawa, Japan
    Jae-Hak Lee, Kyungpook National University
    Dae-Hyun Kim, Kyungpook National University

    2.5,2023_Lee_Final_Paper

  • 3.2.3.2024 5-level stacked In0.53Ga0.47As Multi-Bridged Channel Field-Effect Transistors

    J. H. Yoo, Kyungpook National University
    H.-B. Jo, Kyungpook National University & KETI
    In-Geun Lee, Kyungpook National University
    Su-Min Choi, Kyungpook National University
    H. J. Kim, Kyungpook National University
    W. S. Park, Kyungpook National University
    H. Jang, KANC
    C.-S. Shin, KANC
    K. S. Seo, KANC
    S. H. Shin, Polytech, Incheon
    H. M. Kwon, Polytech, Incheon
    SK Kim, QSI
    JG Kim, QSI
    Jacob Yun, QSI
    Ted Kim, QSI
    J. H. Lee, Kyungpook National University
    D.-H. Kim, Kyungpook National University
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