Tae-Woo Kim
University of Ulsan, Ulsan, South Korea
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2.5.2023 Lg = 25 nm In0.8Ga0.2As/In0.52Al0.48As High-Electron Mobility Transistors on InP Substrate with Both fT and fmax in Excess of 700 GHz
In-Geun Lee, Kyungpook National UniversityHyeon-Bhin Jo, School of Electronic and Electrical Engineering, Kyungpook National UniversityWan-Soo Park, Kyungpook National UniversityJi-Hoon Yoo, School of Electronic and Electrical Engineering, Kyungpook National UniversityJacob Yun, QSITed Kim, QSITakuya Tsutsumi, QSI, Cheon-An, Kyunggi-do, 31044, South KoreaHiroki Sugiyama, NTT Device Technology Laboratories, NTT Corporation, Kanagawa, JapanJae-Hak Lee, Kyungpook National UniversityDae-Hyun Kim, Kyungpook National University -
18.14.2023 A new methodology to extract saturation velocity of In0.53Ga0.47As QW HEMTs
Hyo-Jin Kim, Kyungpook National UniversityJi-Hoon Yoo, School of Electronic and Electrical Engineering, Kyungpook National UniversityWan-Soo Park, Kyungpook National UniversityHyeon-Bhin Jo, School of Electronic and Electrical Engineering, Kyungpook National UniversityIn-Geun Lee, Kyungpook National UniversityTae-Woo Kim, University of Ulsan, Ulsan, South KoreaSang-Kuk Kim, QSI, Cheon-An, Kyunggi-do, 31044, South KoreaYong-Hyun Kim, QSI, Cheon-An, Kyunggi-do, 31044, South KoreaJacob Yun, QSITed Kim, QSITakuya Tsutsumi, QSI, Cheon-An, Kyunggi-do, 31044, South KoreaHiroki Sugiyama, NTT Device Technology Laboratories, NTT Corporation, Kanagawa, JapanHideaki Matsuzaki, NTT Device Technology Laboratories, NTT Corporation, Kanagawa, JapanJae-Hak Lee, Kyungpook National UniversityDae-Hyun Kim, Kyungpook National University