Vladimir Odnoblyudov

QROMIS, USA
  • May 01, 2019 // 2:20pm – 2:40pm

    9.3 Process Development Enabling Lateral GaN JFET Devices for Robust Power Switching on 200 mm Engineered Substrates

    Marko Tadjer, U.S. Naval Research Laboratory
    Vladimir Odnoblyudov, QROMIS, USA
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  • 16.3 Evaluation of GaN Device Structures on 150 mm GaN on Engineered Substrates

    Karl D. Hobart, U.S. Naval Research Laboratory
    Andrew Koehler, Naval Research Laboratory
    Anindya Nath, George Mason University
    Jennifer Hite, U.S. Naval Research Laboratory
    N. Mahadik, U.S. Naval Research Laboratory
    Fritz Kub, Naval Research Laboratory
    Ozgur Aktas, QROMIS, USA
    Vladimir Odnoblyudov, QROMIS, USA
    Cem Basceri, QROMIS, USA
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  • 14.17 Towards Manufacturing Large Area GaN Substrates from QST® Seeds

    Jacob H Leach, Kyma Technologies
    Kevin Udwary, Kyma Technologies
    Paul Quayle, Kyma Technologies
    Vladimir Odnoblyudov, QROMIS, USA
    Cem Basceri, QROMIS, USA
    Ozgur Aktas, QROMIS, USA
    Heather Splawn, Kyma Technologies
    Keith R Evans, Kyma Technologies
    Download Paper