Vladimir Odnoblyudov

QROMIS, USA
  • May 01, 2019 // 2:20pm – 2:40pm

    9.3 Process Development Enabling Lateral GaN JFET Devices for Robust Power Switching on 200 mm Engineered Substrates

    Marko Tadjer, U.S. Naval Research Laboratory
    Vladimir Odnoblyudov, QROMIS, USA
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  • 16.3 Evaluation of GaN Device Structures on 150 mm GaN on Engineered Substrates

    Karl D. Hobart, U.S. Naval Research Laboratory
    Andrew Koehler, U. S. Naval Research Laboratory
    Anindya Nath, George Mason University
    Jennifer Hite, U.S. Naval Research Laboratory
    N. Mahadik, U.S. Naval Research Laboratory
    Fritz Kub, Naval Research Laboratory
    Ozgur Aktas, QROMIS, USA
    Vladimir Odnoblyudov, QROMIS, USA
    Cem Basceri, QROMIS, USA
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  • 14.17 Towards Manufacturing Large Area GaN Substrates from QST® Seeds

    Jacob H Leach, Kyma Technologies
    Kevin Udwary, Kyma Technologies
    Paul Quayle, Kyma Technologies
    Vladimir Odnoblyudov, QROMIS, USA
    Cem Basceri, QROMIS, USA
    Ozgur Aktas, QROMIS, USA
    Heather Splawn, Kyma Technologies
    Keith R Evans, Kyma Technologies
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  • 6.1.1.2024 (Invited)Taking GaN to the Next Level of 100 V to 2000 V and Beyond Scalability with the Revolutionary 200 mm and 300 mm QST® Manufacturing Platform

    C. Basceri, Qromis, Inc.
    V. Odnoblyudov, Qromis, inc.
    C. Kurth, Qromis, Inc.
    M. Yamada, SHIN-ETSU CHEMICAL Co., Ltd
    S. Konishi, SHIN-ETSU CHEMICAL Co., Ltd
    M. Kawahara, SHIN-ETSU CHEMICAL Co., Ltd
    C.-C Liao, VANGUARD INTERNATIONAL SEMICONDUCTOR Corp
    S. Shen, VANGUARD INTERNATIONAL SEMICONDUCTOR Corp
    J. Chiu, VANGUARD INTERNATIONAL SEMICONDUCTOR Corp
    Karen Geens, imec, Leuven, Belgium
    A. Vohra, imec, Leuven, Belgium
    H. De Pauw, CMST, imec & Ghent University
    Benoit Bakeroot, imec, Leuven, Belgium and CMST, imec & Ghent University, Ghent, Belgium
    S. Decoutere, imec
    H. Hahn, AIXTRON SE
    M. Heuken, AIXTRON SE
    K. Tanigawa, OKI ELECTRIC INDUSTRY Co., Ltd
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  • 8.1.3.2024 High Temperature Operation of GaN High Electron Mobility Transistors on Large-Area Engineered Substrates for Extreme Environments

    James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
    Alan Jacobs, U.S. Naval Research Laboratory
    Michael E. Liao, National Research Council Postdoctoral Fellow, Residing at NRL
    Joseph Spencer, U.S. Naval Research Laboratory
    Geoffrey M. Foster, U.S. Naval Research Laboratory
    Andrew Koehler, U. S. Naval Research Laboratory
    Vladimir Odnoblyudov, Qromis, Inc.
    Marko J. Tadjer, U.S. Naval Research Laboratory
    Karl D. Hobart, U.S. Naval Research Laboratory
    Travis J. Anderson, U.S. Naval Research Laboratory
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