Xing Lu
Hong Kong University of Science and Technology
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High Performance Self-aligned AlN-GaN MISHEMT with In-situSiNxGate Dielectric and Regrown Source-Drain
Xing Lu, Hong Kong University of Science and TechnologyJun Ma, Hong Kong University of Science and TechnologyPeiqiang Xu, Hong Kong University of Science and Technology -
11.1 Suppression of Current Collapse in AlGaN/GaN MISHEMTs using in-situ SiN Gate Dielectric and PECVD SiN Passivation
Huaxing Jiang, Hong Kong University of Science and TechnologyChao Liu, Hong Kong University of Science and TechnologyXing Lu, Hong Kong University of Science and TechnologyKei May Lau, Hong Kong University of Science and Technology -
11.3 Investigation of the Interface Traps and Current Collapse in LPCVD SiNx/AlGaN/GaN MISHEMTs
Kun Yu, Xi’an Jiaotong UniversityChao Liu, Hong Kong University of Science and TechnologyHuaxing Jiang, Hong Kong University of Science and TechnologyXing Lu, Hong Kong University of Science and TechnologyKei May Lau, Hong Kong University of Science and TechnologyAnping Zhang, Xi'an Jiaotong University