Yong-Hyun Kim

QSI, Cheon-An, Kyunggi-do, 31044, South Korea

  • 18.12.2023 Analytical model for the source resistance in advanced InxGa1-xAs/In0.52Al0.48As quantum-well high-electron-mobility transistors

    Ji-Hoon Yoo, School of Electronic and Electrical Engineering, Kyungpook National University
    Jae-Hak Lee, Kyungpook National University
    Yong-Hyun Kim, QSI, Cheon-An, Kyunggi-do, 31044, South Korea
    Sang-Kuk Kim, QSI, Cheon-An, Kyunggi-do, 31044, South Korea
    Jacob Yun, QSI
    Ted Kim, QSI
    In-Geun Lee, Kyungpook National University
    Dae-Hyun Kim, Kyungpook National University

    18.12.2023_CS_MANTECH_Full_Paper_JHY_

  • 18.14.2023 A new methodology to extract saturation velocity of In0.53Ga0.47As QW HEMTs

    Hyo-Jin Kim, Kyungpook National University
    Ji-Hoon Yoo, School of Electronic and Electrical Engineering, Kyungpook National University
    Wan-Soo Park, Kyungpook National University
    Hyeon-Bhin Jo, School of Electronic and Electrical Engineering, Kyungpook National University
    In-Geun Lee, Kyungpook National University
    Tae-Woo Kim, University of Ulsan, Ulsan, South Korea
    Sang-Kuk Kim, QSI, Cheon-An, Kyunggi-do, 31044, South Korea
    Yong-Hyun Kim, QSI, Cheon-An, Kyunggi-do, 31044, South Korea
    Jacob Yun, QSI
    Ted Kim, QSI
    Takuya Tsutsumi, QSI, Cheon-An, Kyunggi-do, 31044, South Korea
    Hiroki Sugiyama, NTT Device Technology Laboratories, NTT Corporation, Kanagawa, Japan
    Hideaki Matsuzaki, NTT Device Technology Laboratories, NTT Corporation, Kanagawa, Japan
    Jae-Hak Lee, Kyungpook National University
    Dae-Hyun Kim, Kyungpook National University

    18.14.2023_CS_MANTECH-extended papar_v4