Yu Cao

Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
  • GaN on Silicon Growth by MOCVD: A Mechanistic Approach to Wafer Scaling

    Yu Cao, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
    Oleg Laboutin, IQE
    Chien-Fong Lo, IQE
    Kevin O’Connor, IQE
    Daily Hill, IQE
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  • Fabrication of GaN MISHEMTs Fabricated From GaN Grown By MOCVD on High Resistance 200mm <111> Si Substrates

    Jeffrey LaRoche, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
    Kelly Ip, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
    Mark Breen, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
    Yu Cao, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
    John P. Bettencourt, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
    Doug Guenther, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
    Gabe Gebara, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
    Oleg Laboutin, IQE
    Chien-Fong, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
    Tina Trimble, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
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  • Dispersion Characteristics of ScAlN and ScAlGaN HEMTs by Pulsed I-V Measurements

    Kelson Chabak, Air Force Research Laboratory
    Cathy Lee, Qorvo Inc.
    Yu Cao, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
    Andy Xie, Qorvo
    Edward Beam, QORVO
    Kyle Liddy, KBR
    Antonio Crespo, AFRL
    Dennis Walker, Air Force Research Laboratory
    Robert Fitch, AFRL
    James Gillespie, Air Force Research Laboratory
    Andrew Green, Air Force Research Laboratory

    We report the dispersion characteristics of ScAlN/GaN high-electron-mobility transistors (HEMTs) with various epitaxial designs. Devices were fabricated on both ternary (ScAlN) and quaternary (ScAlGaN) materials. The effects of a GaN capping layer was also investigated. We report similar DC and RF performance for all wafers, but significantly worse dispersion which occurs on the quaternary samples. We observe a total gate and drain lag for the ScAlN wafer to be 49% while the ScAlGaN with and without the GaN cap had 10 and 12% dispersion, respectively.

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