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  • A. Chevtchenko, S.

    Ferdinand-Braun-Institut

  • A.I., Kazimirov

    Research and Production Company Micran

    • Influence of Atomic Hydrogen Treatment on the Threshold Voltage of p-Gate High Voltage GaN Transistors

      Erofeev E.V., Research and Production Company Micran
      Arykov V.S., Research and Production Company Micran
      Kagadei V.A, Research and Production Company Micran
      Stepanenko M.S., Research and Production Company Micran
      Kazimirov A.I., Research and Production Company Micran
      Fedin I.V., Research and Production Company Micran
      Download Paper

  • AFRL,

    • GaN Reliability – Where We Are and Where We Need to Go

      G.D. Via, Air Force Research Laboratory (AFRL), Defense Advanced Research Projects Agency (DARPA) Booz Allen Hamilton
      AFRL
      Download Paper

  • Afshar, Amir

    University of Alberta

    • Low-Voltage and Low-Cost ZnO Based Ultra-Thin-Film Transistors

      Gem Shoute, University of Alberta
      Alex Ma, University of Alberta
      Amir Afshar, University of Alberta
      Download Paper

    • High Breakdown Voltage ZnO Thin Film Transistors Grown by Low Temperature Atomic Layer Deposition

      Alex Ma, University of Alberta
      Amir Afshar, University of Alberta
      Gem Shoute, University of Alberta
      Kenneth Cadien, University of Alberta
      Douglas Barlage, University of Alberta
      Download Paper

  • AG, LayTec

    Institut for Experimentelle Physik

    • Homogeneity control of powerelectronic device structures by advanced in-situ metrology

      Oliver Schulz, Institut for Experimentelle Physik
      Armin Dadgar, Institut for Experimentelle Physik
      Jonas Hennig, Institut for Experimentelle Physik
      Oliver Krumm, Institut for Experimentelle Physik
      Stephanie Fritze, Institut for Experimentelle Physik
      Jürgen Bläsing, Institut for Experimentelle Physik
      Hartmut Witte, Institut for Experimentelle Physik
      Annette Diez, Institut for Experimentelle Physik
      Alois Krost, Institut for Experimentelle Physik
      LayTec AG, Institut for Experimentelle Physik
      Download Paper

  • Ahlgren, Debbora

    Cascade Microtech

    • TransImpedance Amplifiers – what’s the buzz?         

      Debbora Ahlgren, Cascade Microtech
      Download Paper

  • Akazawa, M.

    Hokkaido University

    • Process-dependent properties of InAlN surface and ALD-Al2O3/InAlN interface

      M. Akazawa, Hokkaido University
      M. Chiba, Hokkaido University
      Download Paper

  • Ambrozio, Ernesto

    Skyworks Solutions Inc.

    • GaAs Wafer Breakage Reduction

      Bruce Darley, Skyworks Solutions Inc.
      Manjeet Singh, Skyworks Solutions, Inc.
      Ernesto Ambrozio, Skyworks Solutions Inc.
      Patrick Santos, Skyworks Solutions, Inc.
      Download Paper

  • B. Jones, Evan

    Northrop Grumman Electronic Systems

    • Improvements in GeTe-Based Inline Phase-Change Switch Technology for RF Switching Applications

      Nabil El-Hinnawy, Northrop Grumman Electronic Systems
      Pavel Borodulin, Northrop Grumman Electronic Systems
      Brian P. Wagner, Northrop Grumman Electronic Systems
      Matthew R. King, Northrop Grumman Electronic Systems
      John S. Mason Jr., Northrop Grumman Electronic Systems
      Evan B. Jones, Northrop Grumman Electronic Systems
      Jeff Hartman, Northrop Grumman Electronic Systems
      Robert S. Howell, Northrop Grumman Electronic Systems
      Michael J. Lee, Northrop Grumman Electronic Systems
      Download Paper

  • B. Pate, Bradford

    U.S. Naval Research Laboratory, Washington DC

    • Boron-Doped P Nanocrystalline Diamond Gate Electrode for AlGaN-GaN HEMTs

      Marko J. Tadjer, U.S. Naval Research Laboratory
      Tatyana I. Feygelson, American Society for Engineering Education, United States Naval Research Lab. Universidad Politecnica de Madrid
      Jennifer K. Hite, Naval Research Laboratory
      Bradford B. Pate, U.S. Naval Research Laboratory, Washington DC
      Charles R. Eddy, Naval Research Laboratory
      Jr., Naval Research Laboratory
      Francis J. Kub, Naval Research Laboratory
      Download Paper

    • Diamond-coated High Density Vias for Silicon Substrate-side Thermal Management of GaN HEMTs

      Marko J. Tadjer, U.S. Naval Research Laboratory
      Tatyana I. Feygelson, American Society for Engineering Education, United States Naval Research Lab. Universidad Politecnica de Madrid
      Ashu Wang, American Society for Engineering Education, United States Naval Research Lab. Universidad Politecnica de Madrid
      Bradford B. Pate, U.S. Naval Research Laboratory, Washington DC
      Fritz J. Kub, U.S. Naval Research Laboratory
      Download Paper

  • Bag, Ankush

    Indian Institute of Technology

    • Threading Dislocations in GaN HEMTs on Silicon: Origin of Large Time Constant Transients?

      Saptarsi Ghosh*, Indian Institute of Technology
      Ankush Bag, Indian Institute of Technology
      Partha Mukhapadhay, Indian Institute of Technology
      Syed Mukulika Dinara, Indian Institute of Technology
      Sanjay K. Jana, Indian Institute of Technology
      Sanjib Kabi, Indian Institute of Technology
      Download Paper

  • Bar-Cohen, A.

    Air Force Research Laboratory (AFRL), Defense Advanced Research Projects Agency (DARPA) Booz Allen Hamilton

    • Recent Progress in GaN-on-Diamond Device Technology

      J.D. Blevins, Air Force Research Laboratory (AFRL), Defense Advanced Research Projects Agency (DARPA) Booz Allen Hamilton
      G.D. Via, Air Force Research Laboratory (AFRL), Defense Advanced Research Projects Agency (DARPA) Booz Allen Hamilton
      K. Chabak, Air Force Research Laboratory, Sensors Directorate
      A. Bar-Cohen, Air Force Research Laboratory (AFRL), Defense Advanced Research Projects Agency (DARPA) Booz Allen Hamilton
      J. Maurer, Air Force Research Laboratory (AFRL), Defense Advanced Research Projects Agency (DARPA) Booz Allen Hamilton
      A. Kane, Air Force Research Laboratory (AFRL), Defense Advanced Research Projects Agency (DARPA) Booz Allen Hamilton
      Download Paper

  • Barlage, Douglas

    University of Alberta

    • Engineered Tunneling Contacts with Low-Temperature Atomic Layer Deposition of AlN on GaN

      Kevin Voon, University of Alberta
      Kyle Bothe, University of Alberta
      Pouyan Motamedi, University of Alberta
      Douglas Barlage, University of Alberta
      Ken Cadien, University of Alberta
      Download Paper

    • High Breakdown Voltage ZnO Thin Film Transistors Grown by Low Temperature Atomic Layer Deposition

      Alex Ma, University of Alberta
      Amir Afshar, University of Alberta
      Gem Shoute, University of Alberta
      Kenneth Cadien, University of Alberta
      Douglas Barlage, University of Alberta
      Download Paper

  • Beling b, Andreas

    University of Virginia, MicroLink Devices, Inc.

    • Front-Side-Illuminated InGaAs/InP Modified UTC-Photodiodes With Cliff Layer

      Wenjun Li a, University of Virginia, MicroLink Devices, Inc.
      Andreas Beling b, University of Virginia, MicroLink Devices, Inc.
      Joe Campbell b, University of Virginia, MicroLink Devices, Inc.
      Glen Hillier c, University of Virginia, MicroLink Devices, Inc.
      Chris Stender c, University of Virginia, MicroLink Devices, Inc.
      Noren Pan c, University of Virginia, MicroLink Devices, Inc.
      University of Notre Dame, University of Virginia, MicroLink Devices, Inc.
      Download Paper

  • Bengtsson, O.

    Ferdinand-Braun-Institut

  • Bergeson, Brian

    vago Technologies, Keithley Instruments, Inc.

    • High Speed Highly Parallel Multi-site GaAs Diesort Testing

      Martin J. Brophy, Avago Technologies
      Brian Bergeson, vago Technologies, Keithley Instruments, Inc.
      Royce Grover, vago Technologies, Keithley Instruments, Inc.
      Download Paper

  • Bernardonia, M.

    TriQuint Semiconductor

    • Temperature Measurement and Modeling of Low Thermal Resistance GaN-on-Diamond Transistors

      M. Bernardonia, TriQuint Semiconductor
      D.C. Dumkab, TriQuint Semiconductor
      D.M. Fanning, TriQuint Semiconductor
      M. Kuballa, TriQuint Semiconductor
      University of Bristol, TriQuint Semiconductor
      Download Paper

  • Bhalla, Anup

    Invited Presentation United Silicon Carbide, Inc.,

    • Market Presentation of Wide-Bandgap SiC and GaN technology market propects in light of progress of Si Superjunction and IGBT technology

      Anup Bhalla, Invited Presentation United Silicon Carbide, Inc.,
      Download Paper

  • Bhatia, Pavan

     Brewer Science, TriQuint Semiconductor

    • Improvements in Thin Wafer Handling – Equipment and Material Impacts

      Molly Hladik, Brewer Science, Inc
      Pavan Bhatia,  Brewer Science, TriQuint Semiconductor
      Download Paper

  • Bingle, Richard

    • An E-beam Evaporation Deposition Process for Tantalum Nitride Thin Film Resistors

      Lam Luu-Henderson, Skyworks Solutions Inc.
      Shiban Tiku, Skyworks Solutions, Inc.
      Hong Shen
      Richard Bingle
      Daniel Weaver
      Gary Hu
      Cristian Cismaru, Skyworks Solutions, Inc.
      Mike Sun, Skyworks Solutions, Inc.
      Skyworks Solutions
      formerly of Skyworks Solutions
      Download Paper

  • Bläsing, Jürgen

    Institut for Experimentelle Physik

    • Homogeneity control of powerelectronic device structures by advanced in-situ metrology

      Oliver Schulz, Institut for Experimentelle Physik
      Armin Dadgar, Institut for Experimentelle Physik
      Jonas Hennig, Institut for Experimentelle Physik
      Oliver Krumm, Institut for Experimentelle Physik
      Stephanie Fritze, Institut for Experimentelle Physik
      Jürgen Bläsing, Institut for Experimentelle Physik
      Hartmut Witte, Institut for Experimentelle Physik
      Annette Diez, Institut for Experimentelle Physik
      Alois Krost, Institut for Experimentelle Physik
      LayTec AG, Institut for Experimentelle Physik
      Download Paper

  • Blevins, J.D.

    Air Force Research Laboratory (AFRL), Defense Advanced Research Projects Agency (DARPA) Booz Allen Hamilton

    • Recent Progress in GaN-on-Diamond Device Technology

      J.D. Blevins, Air Force Research Laboratory (AFRL), Defense Advanced Research Projects Agency (DARPA) Booz Allen Hamilton
      G.D. Via, Air Force Research Laboratory (AFRL), Defense Advanced Research Projects Agency (DARPA) Booz Allen Hamilton
      K. Chabak, Air Force Research Laboratory, Sensors Directorate
      A. Bar-Cohen, Air Force Research Laboratory (AFRL), Defense Advanced Research Projects Agency (DARPA) Booz Allen Hamilton
      J. Maurer, Air Force Research Laboratory (AFRL), Defense Advanced Research Projects Agency (DARPA) Booz Allen Hamilton
      A. Kane, Air Force Research Laboratory (AFRL), Defense Advanced Research Projects Agency (DARPA) Booz Allen Hamilton
      Download Paper

  • Boles, T.

    MACOM Technology Solutions, Lincoln Laboratory

    • Effect of Multi-Field Plates on GaN-on-Silicon HEMTs Reverse Breakdown and Leakage Characteristics

      T. Boles, MACOM Technology Solutions, Lincoln Laboratory
      D. Carlson, MACOM Technology Solutions, Lincoln Laboratory
      L. Xia, MACOM Technology Solutions, Lincoln Laboratory
      A. Kaleta, MACOM Technology Solutions, Lincoln Laboratory
      C. McLean, MACOM Technology Solutions, Lincoln Laboratory
      D. Jin, MACOM Technology Solutions, Lincoln Laboratory
      T. Palacios, MACOM Technology Solutions, Lincoln Laboratory
      G. W. Turner, MACOM Technology Solutions, Lincoln Laboratory
      R. J. Molnar, MACOM Technology Solutions, Lincoln Laboratory
      Download Paper

  • Boles, Timothy

    MACOM Technology Solutions

    • Reverse Leakage Current and Breakdown Voltage Improvements in GaN HEMTs and GaN Schottky Diodes

      Timothy Boles, MACOM Technology Solutions
      Ling Xia, MACOM Technology Solutions
      Allen Hanson, MACOM Technology Solutions Inc.
      Anthony Kaleta, MACOM Technology Solutions
      Download Paper

  • Borodulin, Pavel

    Northrop Grumman Electronic Systems

    • Improvements in GeTe-Based Inline Phase-Change Switch Technology for RF Switching Applications

      Nabil El-Hinnawy, Northrop Grumman Electronic Systems
      Pavel Borodulin, Northrop Grumman Electronic Systems
      Brian P. Wagner, Northrop Grumman Electronic Systems
      Matthew R. King, Northrop Grumman Electronic Systems
      John S. Mason Jr., Northrop Grumman Electronic Systems
      Evan B. Jones, Northrop Grumman Electronic Systems
      Jeff Hartman, Northrop Grumman Electronic Systems
      Robert S. Howell, Northrop Grumman Electronic Systems
      Michael J. Lee, Northrop Grumman Electronic Systems
      Download Paper

  • Bothe, Kyle

    University of Alberta

    • Engineered Tunneling Contacts with Low-Temperature Atomic Layer Deposition of AlN on GaN

      Kevin Voon, University of Alberta
      Kyle Bothe, University of Alberta
      Pouyan Motamedi, University of Alberta
      Douglas Barlage, University of Alberta
      Ken Cadien, University of Alberta
      Download Paper

  • Breen, Mark

    Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE

    • Fabrication of GaN MISHEMTs Fabricated From GaN Grown By MOCVD on High Resistance 200mm <111> Si Substrates

      Jeffrey LaRoche, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Kelly Ip, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Mark Breen, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Yu Cao, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      John P. Bettencourt, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Doug Guenther, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Gabe Gebara, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Oleg Laboutin, IQE
      Chien-Fong, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Tina Trimble, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Download Paper

  • Brunner, F.

    Ferdinand-Braun-Institut

  • C. Chao, P.

    MEC, BAE Systems, IQE

    • The First 0.2um 6-Inch GaN-on-SiC MMIC Process

      R. Isaak, MEC, BAE Systems, IQE
      J. Diaz, MEC, BAE Systems, IQE
      M. Gerlach, MEC, BAE Systems, IQE
      J. Hulse, MEC, BAE Systems, IQE
      L. Schlesinger, MEC, BAE Systems, IQE
      P. Seekell, MEC, BAE Systems, IQE
      W. Zhu, MEC, BAE Systems, IQE
      W. Kopp, MEC, BAE Systems, IQE
      X. Yang, MEC, BAE Systems, IQE
      A. Stewart, MEC, BAE Systems, IQE
      K. Chu, MEC, BAE Systems, IQE
      P. C. Chao, MEC, BAE Systems, IQE
      X. Gao, MEC, BAE Systems, IQE
      M. Pan, MEC, BAE Systems, IQE
      D. Gorka, MEC, BAE Systems, IQE
      Download Paper

  • C. Heimlich, Michael

    Macquarie University, Sydney Design Centre, Macom Tech. Solutions, WIN Semiconductors

    • Process control in GaAs manufacturing using Chua’s circuit

      Evgeny Kuxa, Macquarie University, Sydney Design Centre, Macom Tech. Solutions, WIN Semiconductors
      Anthony E. Parker, Macquarie University, Sydney Design Centre, Macom Tech. Solutions, WIN Semiconductors
      Simon J. Mahony, Macquarie University, Sydney Design Centre, Macom Tech. Solutions, WIN Semiconductors
      Anna Dadelloy, Macquarie University, Sydney Design Centre, Macom Tech. Solutions, WIN Semiconductors
      Wen-Kai Wangz, Macquarie University, Sydney Design Centre, Macom Tech. Solutions, WIN Semiconductors
      Michael C. Heimlich, Macquarie University, Sydney Design Centre, Macom Tech. Solutions, WIN Semiconductors
      Download Paper

  • C. Oh, Thomas

    HRL Laboratories

    • Improvements to a mm-Wave GaN MMIC Process with Comprehensive and Efficient Process Control Monitoring

      Shawn D. Burnham, HRL Laboratories
      David F. Brown, HRL Laboratories
      Robert M. Grabar, HRL Laboratories
      Dayward R. Santos, HRL Laboratories
      Dana C. Wheeler, HRL Laboratories
      Samuel J. Kim, HRL Laboratories
      Thomas C. Oh, HRL Laboratories
      Download Paper

  • C. Wheeler, Dana

    HRL Laboratories

    • Improvements to a mm-Wave GaN MMIC Process with Comprehensive and Efficient Process Control Monitoring

      Shawn D. Burnham, HRL Laboratories
      David F. Brown, HRL Laboratories
      Robert M. Grabar, HRL Laboratories
      Dayward R. Santos, HRL Laboratories
      Dana C. Wheeler, HRL Laboratories
      Samuel J. Kim, HRL Laboratories
      Thomas C. Oh, HRL Laboratories
      Download Paper

  • Cadien, Ken

    University of Alberta

    • Engineered Tunneling Contacts with Low-Temperature Atomic Layer Deposition of AlN on GaN

      Kevin Voon, University of Alberta
      Kyle Bothe, University of Alberta
      Pouyan Motamedi, University of Alberta
      Douglas Barlage, University of Alberta
      Ken Cadien, University of Alberta
      Download Paper

  • Cadien, Kenneth

    University of Alberta

    • High Breakdown Voltage ZnO Thin Film Transistors Grown by Low Temperature Atomic Layer Deposition

      Alex Ma, University of Alberta
      Amir Afshar, University of Alberta
      Gem Shoute, University of Alberta
      Kenneth Cadien, University of Alberta
      Douglas Barlage, University of Alberta
      Download Paper

  • Campbell b, Joe

    University of Virginia, MicroLink Devices, Inc.

    • Front-Side-Illuminated InGaAs/InP Modified UTC-Photodiodes With Cliff Layer

      Wenjun Li a, University of Virginia, MicroLink Devices, Inc.
      Andreas Beling b, University of Virginia, MicroLink Devices, Inc.
      Joe Campbell b, University of Virginia, MicroLink Devices, Inc.
      Glen Hillier c, University of Virginia, MicroLink Devices, Inc.
      Chris Stender c, University of Virginia, MicroLink Devices, Inc.
      Noren Pan c, University of Virginia, MicroLink Devices, Inc.
      University of Notre Dame, University of Virginia, MicroLink Devices, Inc.
      Download Paper

  • Cao, Yu

    Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE

    • GaN on Silicon Growth by MOCVD: A Mechanistic Approach to Wafer Scaling

      Yu Cao, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Oleg Laboutin, IQE
      Chien-Fong Lo, IQE
      Kevin O’Connor, IQE
      Daily Hill, IQE
      Download Paper

    • Fabrication of GaN MISHEMTs Fabricated From GaN Grown By MOCVD on High Resistance 200mm <111> Si Substrates

      Jeffrey LaRoche, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Kelly Ip, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Mark Breen, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Yu Cao, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      John P. Bettencourt, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Doug Guenther, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Gabe Gebara, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Oleg Laboutin, IQE
      Chien-Fong, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Tina Trimble, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Download Paper

  • Carlson, D.

    MACOM Technology Solutions, Lincoln Laboratory

    • Effect of Multi-Field Plates on GaN-on-Silicon HEMTs Reverse Breakdown and Leakage Characteristics

      T. Boles, MACOM Technology Solutions, Lincoln Laboratory
      D. Carlson, MACOM Technology Solutions, Lincoln Laboratory
      L. Xia, MACOM Technology Solutions, Lincoln Laboratory
      A. Kaleta, MACOM Technology Solutions, Lincoln Laboratory
      C. McLean, MACOM Technology Solutions, Lincoln Laboratory
      D. Jin, MACOM Technology Solutions, Lincoln Laboratory
      T. Palacios, MACOM Technology Solutions, Lincoln Laboratory
      G. W. Turner, MACOM Technology Solutions, Lincoln Laboratory
      R. J. Molnar, MACOM Technology Solutions, Lincoln Laboratory
      Download Paper

  • Carroll, Patrick

    Qorvo, Inc

  • Cäsar, M.

    University of Bristol, NXP Semiconductors Belgium and Netherlands

    • Need for Defects in Floating-Buffer AlGaN/GaN HEMTs

      M.J. Uren, University of Bristol, Bristol, UK
      M. Silvestri, University of Bristol, NXP Semiconductors Belgium and Netherlands
      M. Cäsar, University of Bristol, NXP Semiconductors Belgium and Netherlands
      J. W. Pomeroy, University of Bristol, Bristol, UK
      G.A.M. Hurkx*, University of Bristol, NXP Semiconductors Belgium and Netherlands
      J.A. Croon+, University of Bristol, NXP Semiconductors Belgium and Netherlands
      J. Šonský*, University of Bristol, NXP Semiconductors Belgium and Netherlands
      Download Paper

  • Cha, Ho-Young

    Student Presentation Seoul National University

    • High-performance normally-off GaN MIS-HEMTs with dual gate insulator employing PEALD SiNx interfacial layer and RF-sputtered HfO2

      Woojin Choi, Seoul National University
      Hojin Ryu, Student Presentation Seoul National University
      Ogyun Seok, Kumoh National Institute of Technology, Republic of Korea
      Minseok Kim, Student Presentation Seoul National University
      Ho-Young Cha, Student Presentation Seoul National University
      Download Paper

  • Chabak, K.

    Air Force Research Laboratory, Sensors Directorate

    • Recent Progress in GaN-on-Diamond Device Technology

      J.D. Blevins, Air Force Research Laboratory (AFRL), Defense Advanced Research Projects Agency (DARPA) Booz Allen Hamilton
      G.D. Via, Air Force Research Laboratory (AFRL), Defense Advanced Research Projects Agency (DARPA) Booz Allen Hamilton
      K. Chabak, Air Force Research Laboratory, Sensors Directorate
      A. Bar-Cohen, Air Force Research Laboratory (AFRL), Defense Advanced Research Projects Agency (DARPA) Booz Allen Hamilton
      J. Maurer, Air Force Research Laboratory (AFRL), Defense Advanced Research Projects Agency (DARPA) Booz Allen Hamilton
      A. Kane, Air Force Research Laboratory (AFRL), Defense Advanced Research Projects Agency (DARPA) Booz Allen Hamilton
      Download Paper

  • Chang, Ricky

    I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.

    • Method for Forming Through Wafer Vias in GaN on SiC Devices and Circuits

      Chia-Hao Chen, WIN Semiconductors Corp
      Yu-Wei Chang, WIN Semiconductors Corp
      Ming-Hung Weng, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.
      Ricky Chang, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.
      Shih-Hui Huang, WIN Semiconductors Corp
      Fraser Wang, WIN Semiconductors Corp
      Yi-Feng Wei, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.
      Stanley Hsieh, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.
      Download Paper

  • Chang, Tsu-Hsi

    HetInTec Corp

  • Chang, Yu-Wei

    WIN Semiconductors Corp

    • Method for Forming Through Wafer Vias in GaN on SiC Devices and Circuits

      Chia-Hao Chen, WIN Semiconductors Corp
      Yu-Wei Chang, WIN Semiconductors Corp
      Ming-Hung Weng, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.
      Ricky Chang, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.
      Shih-Hui Huang, WIN Semiconductors Corp
      Fraser Wang, WIN Semiconductors Corp
      Yi-Feng Wei, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.
      Stanley Hsieh, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.
      Download Paper

  • Chen, Chia-Hao

    WIN Semiconductors Corp

    • Method for Forming Through Wafer Vias in GaN on SiC Devices and Circuits

      Chia-Hao Chen, WIN Semiconductors Corp
      Yu-Wei Chang, WIN Semiconductors Corp
      Ming-Hung Weng, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.
      Ricky Chang, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.
      Shih-Hui Huang, WIN Semiconductors Corp
      Fraser Wang, WIN Semiconductors Corp
      Yi-Feng Wei, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.
      Stanley Hsieh, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.
      Download Paper

  • Chen, Kanuo

    University of Illinois at Urbana-Chamapign

    • Design and Modeling of Mid-Infrared Transistor-Injected Quantum Cascade Lasers

      Kanuo Chen, University of Illinois at Urbana-Chamapign
      John Dallesasse, University of Illinois at Urbana-Chamapign
      Download Paper

    • Optimization of Selective Oxidation for 850 nm (IR) and 780 nm (Visible) Energy/Data Efficient Oxide-Confined Microcavity VCSELs

      Kanuo Chen, University of Illinois at Urbana-Chamapign
      John Dallesasse, University of Illinois at Urbana-Chamapign
      Download Paper

  • Chiba, M.

    Hokkaido University

    • Process-dependent properties of InAlN surface and ALD-Al2O3/InAlN interface

      M. Akazawa, Hokkaido University
      M. Chiba, Hokkaido University
      Download Paper

  • Chien-Fong,

    Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE

    • Fabrication of GaN MISHEMTs Fabricated From GaN Grown By MOCVD on High Resistance 200mm <111> Si Substrates

      Jeffrey LaRoche, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Kelly Ip, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Mark Breen, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Yu Cao, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      John P. Bettencourt, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Doug Guenther, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Gabe Gebara, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Oleg Laboutin, IQE
      Chien-Fong, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Tina Trimble, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Download Paper

  • Chiou, Rei-Bin

    WIN Semiconductors Corp.

    • High Efficiency and High Ruggedness InGaP/GaAs HBT EPI Design

      Rei-Bin Chiou, WIN Semiconductors Corp.
      Ta-Chuan Kuo, WIN Semiconductors Corp.
      Cheng-Kuo Lin, WIN Semiconductors Corp
      Shu-Hsiao Tsai, WIN Semiconductors Corp
      Shin-Yi Ho, National Taiwan University
      Tung-Yao Chou, WIN Semiconductors Corp.
      Dennis Williams, WIN Semiconductors Corp
      Download Paper

  • Choi, Seonhong

    Seoul National University

    • The Effects of SF6Plasma and in-situ N2Plasma Treatment on Gate Leakage, Subthreshold Slope, and Current Collapse in AlGaN/GaN HEMTs

      Neung-Hee Lee, Seoul National University
      Woojin Choi, Seoul National University
      Minseong Lee, Seoul National University
      Seonhong Choi, Seoul National University
      Download Paper

  • Choi, Woojin

    Seoul National University

    • High-performance normally-off GaN MIS-HEMTs with dual gate insulator employing PEALD SiNx interfacial layer and RF-sputtered HfO2

      Woojin Choi, Seoul National University
      Hojin Ryu, Student Presentation Seoul National University
      Ogyun Seok, Kumoh National Institute of Technology, Republic of Korea
      Minseok Kim, Student Presentation Seoul National University
      Ho-Young Cha, Student Presentation Seoul National University
      Download Paper

    • The Effects of SF6Plasma and in-situ N2Plasma Treatment on Gate Leakage, Subthreshold Slope, and Current Collapse in AlGaN/GaN HEMTs

      Neung-Hee Lee, Seoul National University
      Woojin Choi, Seoul National University
      Minseong Lee, Seoul National University
      Seonhong Choi, Seoul National University
      Download Paper

  • Chou, Sam

    Wavetek Microelectronics Corp.

    • Wavetek’s GaAs Manufacturing in 6” CMOS Fab

      Weber Wei, , Wavetek Microelectronics Corporation, United Microelectronics Corporation
      Jeff Lin, , Wavetek Microelectronics Corporation, United Microelectronics Corporation
      MT Wu, , Wavetek Microelectronics Corporation, United Microelectronics Corporation
      Jackie Huang, , Wavetek Microelectronics Corporation, United Microelectronics Corporation
      Sam Chou, Wavetek Microelectronics Corp.
      Amos Yen, , Wavetek Microelectronics Corporation, United Microelectronics Corporation
      CG Shih, , Wavetek Microelectronics Corporation, United Microelectronics Corporation
      Vance Su, , Wavetek Microelectronics Corporation, United Microelectronics Corporation
      Download Paper

    • High-Frequency Small-Signal and Noise Characterization of the E-mode pHEMT Fabricated Using Advanced ED25 Process Technology

      Sheng-Chun Wang, Wavetek Microelectronics Corp.
      Hou-Kuei Huang, Wavetek Microelectronics Corp.
      An-Sam Peng, Wavetek Microelectronics Corp.
      Yi-Shu Lin, Wavetek Microelectronics Corp.
      Lu-Che Huang, Wavetek Microelectronics Corp.
      Chin-Fu Lin, Wavetek Microelectronics Corp.
      Sam Chou, Wavetek Microelectronics Corp.
      Houng-Chi Wei, Wavetek Microelectronics Corp.
      Download Paper

  • Chou, Tung-Yao

    WIN Semiconductors Corp.

    • High Efficiency and High Ruggedness InGaP/GaAs HBT EPI Design

      Rei-Bin Chiou, WIN Semiconductors Corp.
      Ta-Chuan Kuo, WIN Semiconductors Corp.
      Cheng-Kuo Lin, WIN Semiconductors Corp
      Shu-Hsiao Tsai, WIN Semiconductors Corp
      Shin-Yi Ho, National Taiwan University
      Tung-Yao Chou, WIN Semiconductors Corp.
      Dennis Williams, WIN Semiconductors Corp
      Download Paper

  • Choudhury, Arif

    TriQuint Semiconductor, Inc.

    • Thermal Property of WNiSi Thin Film Resistor

      Xiaokang Huang, Qorvo
      Duofeng Yue, Qorvo, Inc.
      Arif Choudhury, TriQuint Semiconductor, Inc.
      Paul Horng, TriQuint Semiconductor, Inc.
      Elisabeth Marley, TriQuint Semiconductor, Inc.
      Jinhong Yang, Qorvo
      Craig Hall, Qorvo
      Harold Isom, Qorvo
      Download Paper

  • Chu, K.

    MEC, BAE Systems, IQE

    • The First 0.2um 6-Inch GaN-on-SiC MMIC Process

      R. Isaak, MEC, BAE Systems, IQE
      J. Diaz, MEC, BAE Systems, IQE
      M. Gerlach, MEC, BAE Systems, IQE
      J. Hulse, MEC, BAE Systems, IQE
      L. Schlesinger, MEC, BAE Systems, IQE
      P. Seekell, MEC, BAE Systems, IQE
      W. Zhu, MEC, BAE Systems, IQE
      W. Kopp, MEC, BAE Systems, IQE
      X. Yang, MEC, BAE Systems, IQE
      A. Stewart, MEC, BAE Systems, IQE
      K. Chu, MEC, BAE Systems, IQE
      P. C. Chao, MEC, BAE Systems, IQE
      X. Gao, MEC, BAE Systems, IQE
      M. Pan, MEC, BAE Systems, IQE
      D. Gorka, MEC, BAE Systems, IQE
      Download Paper

  • Cismaru, Cristian

    Skyworks Solutions, Inc.

    • An E-beam Evaporation Deposition Process for Tantalum Nitride Thin Film Resistors

      Lam Luu-Henderson, Skyworks Solutions Inc.
      Shiban Tiku, Skyworks Solutions, Inc.
      Hong Shen
      Richard Bingle
      Daniel Weaver
      Gary Hu
      Cristian Cismaru, Skyworks Solutions, Inc.
      Mike Sun, Skyworks Solutions, Inc.
      Skyworks Solutions
      formerly of Skyworks Solutions
      Download Paper

  • Croon+, J.A.

    University of Bristol, NXP Semiconductors Belgium and Netherlands

    • Need for Defects in Floating-Buffer AlGaN/GaN HEMTs

      M.J. Uren, University of Bristol, Bristol, UK
      M. Silvestri, University of Bristol, NXP Semiconductors Belgium and Netherlands
      M. Cäsar, University of Bristol, NXP Semiconductors Belgium and Netherlands
      J. W. Pomeroy, University of Bristol, Bristol, UK
      G.A.M. Hurkx*, University of Bristol, NXP Semiconductors Belgium and Netherlands
      J.A. Croon+, University of Bristol, NXP Semiconductors Belgium and Netherlands
      J. Šonský*, University of Bristol, NXP Semiconductors Belgium and Netherlands
      Download Paper

  • Czap, H.

    Fraunhofer Institute

    • A new approach for GaN normally-off power transistors: Lateral recess for positive threshold voltage shift

      P. Waltereit, Fraunhofer Institute
      A. Leuther, Fraunhofer Institute
      J. Rüster, Fraunhofer Institute
      H. Czap, Fraunhofer Institute
      R. Iannucci, Fraunhofer Institute
      S. Müller, Fraunhofer Institute
      Download Paper

  • D. Burnham, Shawn

    HRL Laboratories

    • Improvements to a mm-Wave GaN MMIC Process with Comprehensive and Efficient Process Control Monitoring

      Shawn D. Burnham, HRL Laboratories
      David F. Brown, HRL Laboratories
      Robert M. Grabar, HRL Laboratories
      Dayward R. Santos, HRL Laboratories
      Dana C. Wheeler, HRL Laboratories
      Samuel J. Kim, HRL Laboratories
      Thomas C. Oh, HRL Laboratories
      Download Paper

  • D. Dupuis, R.

    Student Presentation Georgia Institute of Technology

    • Homojunction GaN p-i-n Rectifiers with Ultra-low On-state Resistance

      T.-T. Kao*, Student Presentation Georgia Institute of Technology
      J. Kim, Student Presentation Georgia Institute of Technology
      Y.-C. Lee, Student Presentation Georgia Institute of Technology
      M.-H. Ji, Student Presentation Georgia Institute of Technology
      T. Detchprohm, Student Presentation Georgia Institute of Technology
      R. D. Dupuis, Student Presentation Georgia Institute of Technology
      Download Paper

  • Dadelloy, Anna

    Macquarie University, Sydney Design Centre, Macom Tech. Solutions, WIN Semiconductors

    • Process control in GaAs manufacturing using Chua’s circuit

      Evgeny Kuxa, Macquarie University, Sydney Design Centre, Macom Tech. Solutions, WIN Semiconductors
      Anthony E. Parker, Macquarie University, Sydney Design Centre, Macom Tech. Solutions, WIN Semiconductors
      Simon J. Mahony, Macquarie University, Sydney Design Centre, Macom Tech. Solutions, WIN Semiconductors
      Anna Dadelloy, Macquarie University, Sydney Design Centre, Macom Tech. Solutions, WIN Semiconductors
      Wen-Kai Wangz, Macquarie University, Sydney Design Centre, Macom Tech. Solutions, WIN Semiconductors
      Michael C. Heimlich, Macquarie University, Sydney Design Centre, Macom Tech. Solutions, WIN Semiconductors
      Download Paper

  • Dadgar, Armin

    Institut for Experimentelle Physik

    • Homogeneity control of powerelectronic device structures by advanced in-situ metrology

      Oliver Schulz, Institut for Experimentelle Physik
      Armin Dadgar, Institut for Experimentelle Physik
      Jonas Hennig, Institut for Experimentelle Physik
      Oliver Krumm, Institut for Experimentelle Physik
      Stephanie Fritze, Institut for Experimentelle Physik
      Jürgen Bläsing, Institut for Experimentelle Physik
      Hartmut Witte, Institut for Experimentelle Physik
      Annette Diez, Institut for Experimentelle Physik
      Alois Krost, Institut for Experimentelle Physik
      LayTec AG, Institut for Experimentelle Physik
      Download Paper

  • Dallesasse, John

    University of Illinois at Urbana-Chamapign

    • Design and Modeling of Mid-Infrared Transistor-Injected Quantum Cascade Lasers

      Kanuo Chen, University of Illinois at Urbana-Chamapign
      John Dallesasse, University of Illinois at Urbana-Chamapign
      Download Paper

    • Optimization of Selective Oxidation for 850 nm (IR) and 780 nm (Visible) Energy/Data Efficient Oxide-Confined Microcavity VCSELs

      Kanuo Chen, University of Illinois at Urbana-Chamapign
      John Dallesasse, University of Illinois at Urbana-Chamapign
      Download Paper

  • Darley, Bruce

    Skyworks Solutions Inc.

    • GaAs Wafer Breakage Reduction

      Bruce Darley, Skyworks Solutions Inc.
      Manjeet Singh, Skyworks Solutions, Inc.
      Ernesto Ambrozio, Skyworks Solutions Inc.
      Patrick Santos, Skyworks Solutions, Inc.
      Download Paper

  • Detchphrom, Theeradetch

    Georgia Institute of Technology, Atlanta, GA

    • Npn GaN/InGaN Heterojunction Bipolar Transistors Using a Palladium-Based Contact Scheme

      Yi-Che Lee, Georgia Institute of Technology
      Tsung-Ting Kao, Georgia Institute of Technology,
      Jeomoh Kim, Student Presentation
      Mi-Hee Ji, Student Presentation
      Theeradetch Detchphrom, Georgia Institute of Technology, Atlanta, GA
      Georgia Institute of Technology, Student Presentation
      Download Paper

  • Detchprohm, T.

    Student Presentation Georgia Institute of Technology

    • Homojunction GaN p-i-n Rectifiers with Ultra-low On-state Resistance

      T.-T. Kao*, Student Presentation Georgia Institute of Technology
      J. Kim, Student Presentation Georgia Institute of Technology
      Y.-C. Lee, Student Presentation Georgia Institute of Technology
      M.-H. Ji, Student Presentation Georgia Institute of Technology
      T. Detchprohm, Student Presentation Georgia Institute of Technology
      R. D. Dupuis, Student Presentation Georgia Institute of Technology
      Download Paper

  • Diaz, J.

    MEC, BAE Systems, IQE

    • The First 0.2um 6-Inch GaN-on-SiC MMIC Process

      R. Isaak, MEC, BAE Systems, IQE
      J. Diaz, MEC, BAE Systems, IQE
      M. Gerlach, MEC, BAE Systems, IQE
      J. Hulse, MEC, BAE Systems, IQE
      L. Schlesinger, MEC, BAE Systems, IQE
      P. Seekell, MEC, BAE Systems, IQE
      W. Zhu, MEC, BAE Systems, IQE
      W. Kopp, MEC, BAE Systems, IQE
      X. Yang, MEC, BAE Systems, IQE
      A. Stewart, MEC, BAE Systems, IQE
      K. Chu, MEC, BAE Systems, IQE
      P. C. Chao, MEC, BAE Systems, IQE
      X. Gao, MEC, BAE Systems, IQE
      M. Pan, MEC, BAE Systems, IQE
      D. Gorka, MEC, BAE Systems, IQE
      Download Paper

  • Diez, Annette

    Institut for Experimentelle Physik

    • Homogeneity control of powerelectronic device structures by advanced in-situ metrology

      Oliver Schulz, Institut for Experimentelle Physik
      Armin Dadgar, Institut for Experimentelle Physik
      Jonas Hennig, Institut for Experimentelle Physik
      Oliver Krumm, Institut for Experimentelle Physik
      Stephanie Fritze, Institut for Experimentelle Physik
      Jürgen Bläsing, Institut for Experimentelle Physik
      Hartmut Witte, Institut for Experimentelle Physik
      Annette Diez, Institut for Experimentelle Physik
      Alois Krost, Institut for Experimentelle Physik
      LayTec AG, Institut for Experimentelle Physik
      Download Paper

  • Du, Jhih-Han

    WIN Semiconductors Corp

  • Dudek, Volker

    CliftonGmbH, Chemnitz University of Technology

    • GaAs pin Diode Devices and Technology for High Power applications at 600V and above.

      Volker Dudek, CliftonGmbH, Chemnitz University of Technology
      Jens Kowalsky, CliftonGmbH, Chemnitz University of Technology
      Josef Lutz, CliftonGmbH, Chemnitz University of Technology
      Download Paper

  • Dumkab, D.C.

    TriQuint Semiconductor

    • Temperature Measurement and Modeling of Low Thermal Resistance GaN-on-Diamond Transistors

      M. Bernardonia, TriQuint Semiconductor
      D.C. Dumkab, TriQuint Semiconductor
      D.M. Fanning, TriQuint Semiconductor
      M. Kuballa, TriQuint Semiconductor
      University of Bristol, TriQuint Semiconductor
      Download Paper

  • E. Parker, Anthony

    Macquarie University, Sydney Design Centre, Macom Tech. Solutions, WIN Semiconductors

    • Process control in GaAs manufacturing using Chua’s circuit

      Evgeny Kuxa, Macquarie University, Sydney Design Centre, Macom Tech. Solutions, WIN Semiconductors
      Anthony E. Parker, Macquarie University, Sydney Design Centre, Macom Tech. Solutions, WIN Semiconductors
      Simon J. Mahony, Macquarie University, Sydney Design Centre, Macom Tech. Solutions, WIN Semiconductors
      Anna Dadelloy, Macquarie University, Sydney Design Centre, Macom Tech. Solutions, WIN Semiconductors
      Wen-Kai Wangz, Macquarie University, Sydney Design Centre, Macom Tech. Solutions, WIN Semiconductors
      Michael C. Heimlich, Macquarie University, Sydney Design Centre, Macom Tech. Solutions, WIN Semiconductors
      Download Paper

  • E.V., Erofeev

    Research and Production Company Micran

    • Influence of Atomic Hydrogen Treatment on the Threshold Voltage of p-Gate High Voltage GaN Transistors

      Erofeev E.V., Research and Production Company Micran
      Arykov V.S., Research and Production Company Micran
      Kagadei V.A, Research and Production Company Micran
      Stepanenko M.S., Research and Production Company Micran
      Kazimirov A.I., Research and Production Company Micran
      Fedin I.V., Research and Production Company Micran
      Download Paper

  • Eibelhuber, M.

    EV Group

    • Advanced bonding techniques for photonic integrated circuits

      M. Eibelhuber, EV Group
      T. Matthias, EV Group
      T. Uhrmann, EV Group
      Download Paper

  • El-Hinnawy, Nabil

    Northrop Grumman Electronic Systems

    • Improvements in GeTe-Based Inline Phase-Change Switch Technology for RF Switching Applications

      Nabil El-Hinnawy, Northrop Grumman Electronic Systems
      Pavel Borodulin, Northrop Grumman Electronic Systems
      Brian P. Wagner, Northrop Grumman Electronic Systems
      Matthew R. King, Northrop Grumman Electronic Systems
      John S. Mason Jr., Northrop Grumman Electronic Systems
      Evan B. Jones, Northrop Grumman Electronic Systems
      Jeff Hartman, Northrop Grumman Electronic Systems
      Robert S. Howell, Northrop Grumman Electronic Systems
      Michael J. Lee, Northrop Grumman Electronic Systems
      Download Paper

  • Eom, Su-Keun

    Seoul National University

    • 77 GHz Power Amplifier MMIC using 0.1 μm Double-Deck Shaped (DDS) field-plate gate AlGaN/GaN HEMTs on Si Substrate

      Dong-Hwan Kim, Seoul National University
      Ji-Hoon Kim, Seoul National University
      Su-Keun Eom, Seoul National University
      Min-Seong Lee, Seoul National University
      Download Paper

  • F. Arturo, Marino

    MAX I.E.G. LLC

    • Precision-guided Equipment Maintenance in a Modern Foundry – Case Study

      Dimitry Gurevich, MAX I.E.G. LLC
      Ariel Meyuhas, The MAX Group
      Marino F. Arturo, MAX I.E.G. LLC
      Download Paper

  • F. Brown, David

    HRL Laboratories

    • Improvements to a mm-Wave GaN MMIC Process with Comprehensive and Efficient Process Control Monitoring

      Shawn D. Burnham, HRL Laboratories
      David F. Brown, HRL Laboratories
      Robert M. Grabar, HRL Laboratories
      Dayward R. Santos, HRL Laboratories
      Dana C. Wheeler, HRL Laboratories
      Samuel J. Kim, HRL Laboratories
      Thomas C. Oh, HRL Laboratories
      Download Paper

  • Fanning, D.M.

    TriQuint Semiconductor

    • Temperature Measurement and Modeling of Low Thermal Resistance GaN-on-Diamond Transistors

      M. Bernardonia, TriQuint Semiconductor
      D.C. Dumkab, TriQuint Semiconductor
      D.M. Fanning, TriQuint Semiconductor
      M. Kuballa, TriQuint Semiconductor
      University of Bristol, TriQuint Semiconductor
      Download Paper

  • Freyer, S.

    Ferdinand-Braun-Institute

    • Yield improvement of metal-insulator-metal capacitors in MMIC fabrication process based on AlGaN/GaN HFETs

      S. A. Chevtchenko, Ferdinand-Braun-Institut
      S. Freyer, Ferdinand-Braun-Institute
      L. Weixelbaum, Ferdinand-Braun-Institute
      P. Kurpas, Ferdinand-Braun-Institut
      Download Paper

  • Fritze, Stephanie

    Institut for Experimentelle Physik

    • Homogeneity control of powerelectronic device structures by advanced in-situ metrology

      Oliver Schulz, Institut for Experimentelle Physik
      Armin Dadgar, Institut for Experimentelle Physik
      Jonas Hennig, Institut for Experimentelle Physik
      Oliver Krumm, Institut for Experimentelle Physik
      Stephanie Fritze, Institut for Experimentelle Physik
      Jürgen Bläsing, Institut for Experimentelle Physik
      Hartmut Witte, Institut for Experimentelle Physik
      Annette Diez, Institut for Experimentelle Physik
      Alois Krost, Institut for Experimentelle Physik
      LayTec AG, Institut for Experimentelle Physik
      Download Paper

  • Fukunaga, Y.

    Furukawa DenshiI Co.,Ltd.

    • The Longer life wafer tray for MOCVD -AlN ceramics (FAN090) by solid phase sintering

      N. Furukoshi, Furukawa DenshiI Co.,Ltd.
      K. Mutoh, Furukawa DenshiI Co.,Ltd.
      Y. Fukunaga, Furukawa DenshiI Co.,Ltd.
      T. Yamamura, Furukawa DenshiI Co.,Ltd.
      T. Iwata, Furukawa DenshiI Co.,Ltd.
      Download Paper

  • Furukoshi, N.

    Furukawa DenshiI Co.,Ltd.

    • The Longer life wafer tray for MOCVD -AlN ceramics (FAN090) by solid phase sintering

      N. Furukoshi, Furukawa DenshiI Co.,Ltd.
      K. Mutoh, Furukawa DenshiI Co.,Ltd.
      Y. Fukunaga, Furukawa DenshiI Co.,Ltd.
      T. Yamamura, Furukawa DenshiI Co.,Ltd.
      T. Iwata, Furukawa DenshiI Co.,Ltd.
      Download Paper

  • Gao, Feng

    Massachusetts Institute of Technology

    • Electrochemical Degradation Mechanisms in AlGaN/GaN HEMTs

      Feng Gao, Massachusetts Institute of Technology
      Carl. V. Thompson, Massachusetts Institute of Technology
      Download Paper

  • Gao, X.

    MEC, BAE Systems, IQE

    • The First 0.2um 6-Inch GaN-on-SiC MMIC Process

      R. Isaak, MEC, BAE Systems, IQE
      J. Diaz, MEC, BAE Systems, IQE
      M. Gerlach, MEC, BAE Systems, IQE
      J. Hulse, MEC, BAE Systems, IQE
      L. Schlesinger, MEC, BAE Systems, IQE
      P. Seekell, MEC, BAE Systems, IQE
      W. Zhu, MEC, BAE Systems, IQE
      W. Kopp, MEC, BAE Systems, IQE
      X. Yang, MEC, BAE Systems, IQE
      A. Stewart, MEC, BAE Systems, IQE
      K. Chu, MEC, BAE Systems, IQE
      P. C. Chao, MEC, BAE Systems, IQE
      X. Gao, MEC, BAE Systems, IQE
      M. Pan, MEC, BAE Systems, IQE
      D. Gorka, MEC, BAE Systems, IQE
      Download Paper

  • Gebara, Gabe

    Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE

    • Fabrication of GaN MISHEMTs Fabricated From GaN Grown By MOCVD on High Resistance 200mm <111> Si Substrates

      Jeffrey LaRoche, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Kelly Ip, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Mark Breen, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Yu Cao, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      John P. Bettencourt, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Doug Guenther, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Gabe Gebara, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Oleg Laboutin, IQE
      Chien-Fong, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Tina Trimble, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Download Paper

  • Gerlach, M.

    MEC, BAE Systems, IQE

    • The First 0.2um 6-Inch GaN-on-SiC MMIC Process

      R. Isaak, MEC, BAE Systems, IQE
      J. Diaz, MEC, BAE Systems, IQE
      M. Gerlach, MEC, BAE Systems, IQE
      J. Hulse, MEC, BAE Systems, IQE
      L. Schlesinger, MEC, BAE Systems, IQE
      P. Seekell, MEC, BAE Systems, IQE
      W. Zhu, MEC, BAE Systems, IQE
      W. Kopp, MEC, BAE Systems, IQE
      X. Yang, MEC, BAE Systems, IQE
      A. Stewart, MEC, BAE Systems, IQE
      K. Chu, MEC, BAE Systems, IQE
      P. C. Chao, MEC, BAE Systems, IQE
      X. Gao, MEC, BAE Systems, IQE
      M. Pan, MEC, BAE Systems, IQE
      D. Gorka, MEC, BAE Systems, IQE
      Download Paper

  • Ghosh*, Saptarsi

    Indian Institute of Technology

    • Threading Dislocations in GaN HEMTs on Silicon: Origin of Large Time Constant Transients?

      Saptarsi Ghosh*, Indian Institute of Technology
      Ankush Bag, Indian Institute of Technology
      Partha Mukhapadhay, Indian Institute of Technology
      Syed Mukulika Dinara, Indian Institute of Technology
      Sanjay K. Jana, Indian Institute of Technology
      Sanjib Kabi, Indian Institute of Technology
      Download Paper

  • Gorka, D.

    MEC, BAE Systems, IQE

    • The First 0.2um 6-Inch GaN-on-SiC MMIC Process

      R. Isaak, MEC, BAE Systems, IQE
      J. Diaz, MEC, BAE Systems, IQE
      M. Gerlach, MEC, BAE Systems, IQE
      J. Hulse, MEC, BAE Systems, IQE
      L. Schlesinger, MEC, BAE Systems, IQE
      P. Seekell, MEC, BAE Systems, IQE
      W. Zhu, MEC, BAE Systems, IQE
      W. Kopp, MEC, BAE Systems, IQE
      X. Yang, MEC, BAE Systems, IQE
      A. Stewart, MEC, BAE Systems, IQE
      K. Chu, MEC, BAE Systems, IQE
      P. C. Chao, MEC, BAE Systems, IQE
      X. Gao, MEC, BAE Systems, IQE
      M. Pan, MEC, BAE Systems, IQE
      D. Gorka, MEC, BAE Systems, IQE
      Download Paper

  • Grover, Royce

    vago Technologies, Keithley Instruments, Inc.

    • High Speed Highly Parallel Multi-site GaAs Diesort Testing

      Martin J. Brophy, Avago Technologies
      Brian Bergeson, vago Technologies, Keithley Instruments, Inc.
      Royce Grover, vago Technologies, Keithley Instruments, Inc.
      Download Paper

  • Guenther, Doug

    Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE

    • Fabrication of GaN MISHEMTs Fabricated From GaN Grown By MOCVD on High Resistance 200mm <111> Si Substrates

      Jeffrey LaRoche, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Kelly Ip, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Mark Breen, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Yu Cao, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      John P. Bettencourt, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Doug Guenther, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Gabe Gebara, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Oleg Laboutin, IQE
      Chien-Fong, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Tina Trimble, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Download Paper

  • Gurevich, Dimitry

    MAX I.E.G. LLC

    • Precision-guided Equipment Maintenance in a Modern Foundry – Case Study

      Dimitry Gurevich, MAX I.E.G. LLC
      Ariel Meyuhas, The MAX Group
      Marino F. Arturo, MAX I.E.G. LLC
      Download Paper

  • Hall, Craig

    Qorvo

  • Hanson, Allen

    MACOM Technology Solutions Inc.

    • Reverse Leakage Current and Breakdown Voltage Improvements in GaN HEMTs and GaN Schottky Diodes

      Timothy Boles, MACOM Technology Solutions
      Ling Xia, MACOM Technology Solutions
      Allen Hanson, MACOM Technology Solutions Inc.
      Anthony Kaleta, MACOM Technology Solutions
      Download Paper

  • Hartman, Jeff

    Northrop Grumman Electronic Systems

    • Improvements in GeTe-Based Inline Phase-Change Switch Technology for RF Switching Applications

      Nabil El-Hinnawy, Northrop Grumman Electronic Systems
      Pavel Borodulin, Northrop Grumman Electronic Systems
      Brian P. Wagner, Northrop Grumman Electronic Systems
      Matthew R. King, Northrop Grumman Electronic Systems
      John S. Mason Jr., Northrop Grumman Electronic Systems
      Evan B. Jones, Northrop Grumman Electronic Systems
      Jeff Hartman, Northrop Grumman Electronic Systems
      Robert S. Howell, Northrop Grumman Electronic Systems
      Michael J. Lee, Northrop Grumman Electronic Systems
      Download Paper

  • Hennig, Jonas

    Institut for Experimentelle Physik

    • Homogeneity control of powerelectronic device structures by advanced in-situ metrology

      Oliver Schulz, Institut for Experimentelle Physik
      Armin Dadgar, Institut for Experimentelle Physik
      Jonas Hennig, Institut for Experimentelle Physik
      Oliver Krumm, Institut for Experimentelle Physik
      Stephanie Fritze, Institut for Experimentelle Physik
      Jürgen Bläsing, Institut for Experimentelle Physik
      Hartmut Witte, Institut for Experimentelle Physik
      Annette Diez, Institut for Experimentelle Physik
      Alois Krost, Institut for Experimentelle Physik
      LayTec AG, Institut for Experimentelle Physik
      Download Paper

  • Hill, Daily

    IQE

    • GaN on Silicon Growth by MOCVD: A Mechanistic Approach to Wafer Scaling

      Yu Cao, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Oleg Laboutin, IQE
      Chien-Fong Lo, IQE
      Kevin O’Connor, IQE
      Daily Hill, IQE
      Download Paper

  • Hillier c, Glen

    University of Virginia, MicroLink Devices, Inc.

    • Front-Side-Illuminated InGaAs/InP Modified UTC-Photodiodes With Cliff Layer

      Wenjun Li a, University of Virginia, MicroLink Devices, Inc.
      Andreas Beling b, University of Virginia, MicroLink Devices, Inc.
      Joe Campbell b, University of Virginia, MicroLink Devices, Inc.
      Glen Hillier c, University of Virginia, MicroLink Devices, Inc.
      Chris Stender c, University of Virginia, MicroLink Devices, Inc.
      Noren Pan c, University of Virginia, MicroLink Devices, Inc.
      University of Notre Dame, University of Virginia, MicroLink Devices, Inc.
      Download Paper

  • Hiramoto, M.

    Samco Inc.

    • Recess Etching Process for AlGaN/GaN-HFET Devices Using In-Situ Monitoring

      T. Nishimiya, Samco Inc.
      Y. Sakano, Samco Inc.
      H. Ogiya, Samco Inc.
      M. Hiramoto, Samco Inc.
      Download Paper

  • Hladik, Molly

    Brewer Science, Inc

  • Ho, Shin-Yi

    National Taiwan University

    • High Efficiency and High Ruggedness InGaP/GaAs HBT EPI Design

      Rei-Bin Chiou, WIN Semiconductors Corp.
      Ta-Chuan Kuo, WIN Semiconductors Corp.
      Cheng-Kuo Lin, WIN Semiconductors Corp
      Shu-Hsiao Tsai, WIN Semiconductors Corp
      Shin-Yi Ho, National Taiwan University
      Tung-Yao Chou, WIN Semiconductors Corp.
      Dennis Williams, WIN Semiconductors Corp
      Download Paper

  • Horng, Paul

    TriQuint Semiconductor, Inc.

    • Thermal Property of WNiSi Thin Film Resistor

      Xiaokang Huang, Qorvo
      Duofeng Yue, Qorvo, Inc.
      Arif Choudhury, TriQuint Semiconductor, Inc.
      Paul Horng, TriQuint Semiconductor, Inc.
      Elisabeth Marley, TriQuint Semiconductor, Inc.
      Jinhong Yang, Qorvo
      Craig Hall, Qorvo
      Harold Isom, Qorvo
      Download Paper

  • Hsieh, Stanley

    I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.

    • Quality and throughput improvement of GaN/SiC wafer saw with the addition of ultrasonic power          

      Fraser Wang, WIN Semiconductors Corp
      Vincent Hsu, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.
      Stanley Hsieh, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.
      Download Paper

    • Method for Forming Through Wafer Vias in GaN on SiC Devices and Circuits

      Chia-Hao Chen, WIN Semiconductors Corp
      Yu-Wei Chang, WIN Semiconductors Corp
      Ming-Hung Weng, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.
      Ricky Chang, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.
      Shih-Hui Huang, WIN Semiconductors Corp
      Fraser Wang, WIN Semiconductors Corp
      Yi-Feng Wei, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.
      Stanley Hsieh, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.
      Download Paper

  • Hsu, Vincent

    I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.

    • Quality and throughput improvement of GaN/SiC wafer saw with the addition of ultrasonic power          

      Fraser Wang, WIN Semiconductors Corp
      Vincent Hsu, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.
      Stanley Hsieh, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.
      Download Paper

  • Hu, Gary

    • An E-beam Evaporation Deposition Process for Tantalum Nitride Thin Film Resistors

      Lam Luu-Henderson, Skyworks Solutions Inc.
      Shiban Tiku, Skyworks Solutions, Inc.
      Hong Shen
      Richard Bingle
      Daniel Weaver
      Gary Hu
      Cristian Cismaru, Skyworks Solutions, Inc.
      Mike Sun, Skyworks Solutions, Inc.
      Skyworks Solutions
      formerly of Skyworks Solutions
      Download Paper

  • Huang, Hou-Kuei

    Wavetek Microelectronics Corp.

    • High-Frequency Small-Signal and Noise Characterization of the E-mode pHEMT Fabricated Using Advanced ED25 Process Technology

      Sheng-Chun Wang, Wavetek Microelectronics Corp.
      Hou-Kuei Huang, Wavetek Microelectronics Corp.
      An-Sam Peng, Wavetek Microelectronics Corp.
      Yi-Shu Lin, Wavetek Microelectronics Corp.
      Lu-Che Huang, Wavetek Microelectronics Corp.
      Chin-Fu Lin, Wavetek Microelectronics Corp.
      Sam Chou, Wavetek Microelectronics Corp.
      Houng-Chi Wei, Wavetek Microelectronics Corp.
      Download Paper

  • Huang, Jackie

    , Wavetek Microelectronics Corporation, United Microelectronics Corporation

    • Wavetek’s GaAs Manufacturing in 6” CMOS Fab

      Weber Wei, , Wavetek Microelectronics Corporation, United Microelectronics Corporation
      Jeff Lin, , Wavetek Microelectronics Corporation, United Microelectronics Corporation
      MT Wu, , Wavetek Microelectronics Corporation, United Microelectronics Corporation
      Jackie Huang, , Wavetek Microelectronics Corporation, United Microelectronics Corporation
      Sam Chou, Wavetek Microelectronics Corp.
      Amos Yen, , Wavetek Microelectronics Corporation, United Microelectronics Corporation
      CG Shih, , Wavetek Microelectronics Corporation, United Microelectronics Corporation
      Vance Su, , Wavetek Microelectronics Corporation, United Microelectronics Corporation
      Download Paper

  • Huang, Lu-Che

    Wavetek Microelectronics Corp.

    • High-Frequency Small-Signal and Noise Characterization of the E-mode pHEMT Fabricated Using Advanced ED25 Process Technology

      Sheng-Chun Wang, Wavetek Microelectronics Corp.
      Hou-Kuei Huang, Wavetek Microelectronics Corp.
      An-Sam Peng, Wavetek Microelectronics Corp.
      Yi-Shu Lin, Wavetek Microelectronics Corp.
      Lu-Che Huang, Wavetek Microelectronics Corp.
      Chin-Fu Lin, Wavetek Microelectronics Corp.
      Sam Chou, Wavetek Microelectronics Corp.
      Houng-Chi Wei, Wavetek Microelectronics Corp.
      Download Paper

  • Huang, Shih-Hui

    WIN Semiconductors Corp

    • Method for Forming Through Wafer Vias in GaN on SiC Devices and Circuits

      Chia-Hao Chen, WIN Semiconductors Corp
      Yu-Wei Chang, WIN Semiconductors Corp
      Ming-Hung Weng, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.
      Ricky Chang, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.
      Shih-Hui Huang, WIN Semiconductors Corp
      Fraser Wang, WIN Semiconductors Corp
      Yi-Feng Wei, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.
      Stanley Hsieh, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.
      Download Paper

  • Huang, Xiaokang

    Qorvo

  • Huang*, Sen

    Student Presentation , Hong Kong University of Science and Technology, Institute of Microelectronics Chinese Academy of Science

    • Stability and Temperature Dependence of Dynamic RON in AlN-Passivated AlGaN/GaN HEMT on Si Substrate

      Zhikai Tang, The Hong Kong University of Science and Technology
      Sen Huang*, Student Presentation , Hong Kong University of Science and Technology, Institute of Microelectronics Chinese Academy of Science
      Download Paper

  • Hulse, J.

    MEC, BAE Systems, IQE

    • The First 0.2um 6-Inch GaN-on-SiC MMIC Process

      R. Isaak, MEC, BAE Systems, IQE
      J. Diaz, MEC, BAE Systems, IQE
      M. Gerlach, MEC, BAE Systems, IQE
      J. Hulse, MEC, BAE Systems, IQE
      L. Schlesinger, MEC, BAE Systems, IQE
      P. Seekell, MEC, BAE Systems, IQE
      W. Zhu, MEC, BAE Systems, IQE
      W. Kopp, MEC, BAE Systems, IQE
      X. Yang, MEC, BAE Systems, IQE
      A. Stewart, MEC, BAE Systems, IQE
      K. Chu, MEC, BAE Systems, IQE
      P. C. Chao, MEC, BAE Systems, IQE
      X. Gao, MEC, BAE Systems, IQE
      M. Pan, MEC, BAE Systems, IQE
      D. Gorka, MEC, BAE Systems, IQE
      Download Paper

  • Hurkx*, G.A.M.

    University of Bristol, NXP Semiconductors Belgium and Netherlands

    • Need for Defects in Floating-Buffer AlGaN/GaN HEMTs

      M.J. Uren, University of Bristol, Bristol, UK
      M. Silvestri, University of Bristol, NXP Semiconductors Belgium and Netherlands
      M. Cäsar, University of Bristol, NXP Semiconductors Belgium and Netherlands
      J. W. Pomeroy, University of Bristol, Bristol, UK
      G.A.M. Hurkx*, University of Bristol, NXP Semiconductors Belgium and Netherlands
      J.A. Croon+, University of Bristol, NXP Semiconductors Belgium and Netherlands
      J. Šonský*, University of Bristol, NXP Semiconductors Belgium and Netherlands
      Download Paper

  • I. Feygelson, Tatyana

    American Society for Engineering Education, United States Naval Research Lab. Universidad Politecnica de Madrid

    • Boron-Doped P Nanocrystalline Diamond Gate Electrode for AlGaN-GaN HEMTs

      Marko J. Tadjer, U.S. Naval Research Laboratory
      Tatyana I. Feygelson, American Society for Engineering Education, United States Naval Research Lab. Universidad Politecnica de Madrid
      Jennifer K. Hite, Naval Research Laboratory
      Bradford B. Pate, U.S. Naval Research Laboratory, Washington DC
      Charles R. Eddy, Naval Research Laboratory
      Jr., Naval Research Laboratory
      Francis J. Kub, Naval Research Laboratory
      Download Paper

    • Diamond-coated High Density Vias for Silicon Substrate-side Thermal Management of GaN HEMTs

      Marko J. Tadjer, U.S. Naval Research Laboratory
      Tatyana I. Feygelson, American Society for Engineering Education, United States Naval Research Lab. Universidad Politecnica de Madrid
      Ashu Wang, American Society for Engineering Education, United States Naval Research Lab. Universidad Politecnica de Madrid
      Bradford B. Pate, U.S. Naval Research Laboratory, Washington DC
      Fritz J. Kub, U.S. Naval Research Laboratory
      Download Paper

  • I.V., Fedin

    Research and Production Company Micran

    • Influence of Atomic Hydrogen Treatment on the Threshold Voltage of p-Gate High Voltage GaN Transistors

      Erofeev E.V., Research and Production Company Micran
      Arykov V.S., Research and Production Company Micran
      Kagadei V.A, Research and Production Company Micran
      Stepanenko M.S., Research and Production Company Micran
      Kazimirov A.I., Research and Production Company Micran
      Fedin I.V., Research and Production Company Micran
      Download Paper

  • Iannucci, R.

    Fraunhofer Institute

    • A new approach for GaN normally-off power transistors: Lateral recess for positive threshold voltage shift

      P. Waltereit, Fraunhofer Institute
      A. Leuther, Fraunhofer Institute
      J. Rüster, Fraunhofer Institute
      H. Czap, Fraunhofer Institute
      R. Iannucci, Fraunhofer Institute
      S. Müller, Fraunhofer Institute
      Download Paper

  • Ichikawa, Hiroyuki

    Sumitomo Electric Industries, Ltd.

  • Imade, M.

    Osaka University

    • Growth of bulk GaN Crystal by Na Flux Method

      Y. Mori, Osaka University
      M. Imade, Osaka University
      M. Maruyama, Osaka University
      M. Yoshimura, Osaka University
      Download Paper

  • Institute of Technology, Georgia

    Student Presentation

    • Npn GaN/InGaN Heterojunction Bipolar Transistors Using a Palladium-Based Contact Scheme

      Yi-Che Lee, Georgia Institute of Technology
      Tsung-Ting Kao, Georgia Institute of Technology,
      Jeomoh Kim, Student Presentation
      Mi-Hee Ji, Student Presentation
      Theeradetch Detchphrom, Georgia Institute of Technology, Atlanta, GA
      Georgia Institute of Technology, Student Presentation
      Download Paper

  • Ip, Kelly

    Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE

    • Fabrication of GaN MISHEMTs Fabricated From GaN Grown By MOCVD on High Resistance 200mm <111> Si Substrates

      Jeffrey LaRoche, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Kelly Ip, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Mark Breen, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Yu Cao, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      John P. Bettencourt, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Doug Guenther, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Gabe Gebara, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Oleg Laboutin, IQE
      Chien-Fong, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Tina Trimble, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Download Paper

  • Isaak, R.

    MEC, BAE Systems, IQE

    • The First 0.2um 6-Inch GaN-on-SiC MMIC Process

      R. Isaak, MEC, BAE Systems, IQE
      J. Diaz, MEC, BAE Systems, IQE
      M. Gerlach, MEC, BAE Systems, IQE
      J. Hulse, MEC, BAE Systems, IQE
      L. Schlesinger, MEC, BAE Systems, IQE
      P. Seekell, MEC, BAE Systems, IQE
      W. Zhu, MEC, BAE Systems, IQE
      W. Kopp, MEC, BAE Systems, IQE
      X. Yang, MEC, BAE Systems, IQE
      A. Stewart, MEC, BAE Systems, IQE
      K. Chu, MEC, BAE Systems, IQE
      P. C. Chao, MEC, BAE Systems, IQE
      X. Gao, MEC, BAE Systems, IQE
      M. Pan, MEC, BAE Systems, IQE
      D. Gorka, MEC, BAE Systems, IQE
      Download Paper

  • Isom, Harold

    Qorvo

  • Iverson, Eric

    University of Illinois at Urbana-Champaign

    • Surface Recombination and Performance Issues of Scaling Submicron Emitter on Type-II GaAsSb

      Huiming Xu, University of Illinois at Urbana-Champaign
      Eric Iverson, University of Illinois at Urbana-Champaign
      Download Paper

  • Iwata, T.

    Furukawa DenshiI Co.,Ltd.

    • The Longer life wafer tray for MOCVD -AlN ceramics (FAN090) by solid phase sintering

      N. Furukoshi, Furukawa DenshiI Co.,Ltd.
      K. Mutoh, Furukawa DenshiI Co.,Ltd.
      Y. Fukunaga, Furukawa DenshiI Co.,Ltd.
      T. Yamamura, Furukawa DenshiI Co.,Ltd.
      T. Iwata, Furukawa DenshiI Co.,Ltd.
      Download Paper

  • J. Brophy, Martin

    Avago Technologies

  • J. Kim, Samuel

    HRL Laboratories

    • Improvements to a mm-Wave GaN MMIC Process with Comprehensive and Efficient Process Control Monitoring

      Shawn D. Burnham, HRL Laboratories
      David F. Brown, HRL Laboratories
      Robert M. Grabar, HRL Laboratories
      Dayward R. Santos, HRL Laboratories
      Dana C. Wheeler, HRL Laboratories
      Samuel J. Kim, HRL Laboratories
      Thomas C. Oh, HRL Laboratories
      Download Paper

  • J. Kub, Francis

    Naval Research Laboratory

  • J. Kub, Fritz

    U.S. Naval Research Laboratory

  • J. Lee, Michael

    Northrop Grumman Electronic Systems

    • Improvements in GeTe-Based Inline Phase-Change Switch Technology for RF Switching Applications

      Nabil El-Hinnawy, Northrop Grumman Electronic Systems
      Pavel Borodulin, Northrop Grumman Electronic Systems
      Brian P. Wagner, Northrop Grumman Electronic Systems
      Matthew R. King, Northrop Grumman Electronic Systems
      John S. Mason Jr., Northrop Grumman Electronic Systems
      Evan B. Jones, Northrop Grumman Electronic Systems
      Jeff Hartman, Northrop Grumman Electronic Systems
      Robert S. Howell, Northrop Grumman Electronic Systems
      Michael J. Lee, Northrop Grumman Electronic Systems
      Download Paper

  • J. Mahony, Simon

    Macquarie University, Sydney Design Centre, Macom Tech. Solutions, WIN Semiconductors

    • Process control in GaAs manufacturing using Chua’s circuit

      Evgeny Kuxa, Macquarie University, Sydney Design Centre, Macom Tech. Solutions, WIN Semiconductors
      Anthony E. Parker, Macquarie University, Sydney Design Centre, Macom Tech. Solutions, WIN Semiconductors
      Simon J. Mahony, Macquarie University, Sydney Design Centre, Macom Tech. Solutions, WIN Semiconductors
      Anna Dadelloy, Macquarie University, Sydney Design Centre, Macom Tech. Solutions, WIN Semiconductors
      Wen-Kai Wangz, Macquarie University, Sydney Design Centre, Macom Tech. Solutions, WIN Semiconductors
      Michael C. Heimlich, Macquarie University, Sydney Design Centre, Macom Tech. Solutions, WIN Semiconductors
      Download Paper

  • J. Molnar, R.

    MACOM Technology Solutions, Lincoln Laboratory

    • Effect of Multi-Field Plates on GaN-on-Silicon HEMTs Reverse Breakdown and Leakage Characteristics

      T. Boles, MACOM Technology Solutions, Lincoln Laboratory
      D. Carlson, MACOM Technology Solutions, Lincoln Laboratory
      L. Xia, MACOM Technology Solutions, Lincoln Laboratory
      A. Kaleta, MACOM Technology Solutions, Lincoln Laboratory
      C. McLean, MACOM Technology Solutions, Lincoln Laboratory
      D. Jin, MACOM Technology Solutions, Lincoln Laboratory
      T. Palacios, MACOM Technology Solutions, Lincoln Laboratory
      G. W. Turner, MACOM Technology Solutions, Lincoln Laboratory
      R. J. Molnar, MACOM Technology Solutions, Lincoln Laboratory
      Download Paper

  • J. Roesch, William

    TriQuint Semiconductor, Inc.

    • Developing Power Amplifier Module Standards for Reliability Qualification

      William J. Roesch, TriQuint Semiconductor, Inc.
      Download Paper

  • J. Tadjer, Marko

    U.S. Naval Research Laboratory

  • Ji, M.-H.

    Student Presentation Georgia Institute of Technology

    • Homojunction GaN p-i-n Rectifiers with Ultra-low On-state Resistance

      T.-T. Kao*, Student Presentation Georgia Institute of Technology
      J. Kim, Student Presentation Georgia Institute of Technology
      Y.-C. Lee, Student Presentation Georgia Institute of Technology
      M.-H. Ji, Student Presentation Georgia Institute of Technology
      T. Detchprohm, Student Presentation Georgia Institute of Technology
      R. D. Dupuis, Student Presentation Georgia Institute of Technology
      Download Paper

  • Ji, Mi-Hee

    Student Presentation

    • Npn GaN/InGaN Heterojunction Bipolar Transistors Using a Palladium-Based Contact Scheme

      Yi-Che Lee, Georgia Institute of Technology
      Tsung-Ting Kao, Georgia Institute of Technology,
      Jeomoh Kim, Student Presentation
      Mi-Hee Ji, Student Presentation
      Theeradetch Detchphrom, Georgia Institute of Technology, Atlanta, GA
      Georgia Institute of Technology, Student Presentation
      Download Paper

  • Jin, D.

    MACOM Technology Solutions, Lincoln Laboratory

    • Effect of Multi-Field Plates on GaN-on-Silicon HEMTs Reverse Breakdown and Leakage Characteristics

      T. Boles, MACOM Technology Solutions, Lincoln Laboratory
      D. Carlson, MACOM Technology Solutions, Lincoln Laboratory
      L. Xia, MACOM Technology Solutions, Lincoln Laboratory
      A. Kaleta, MACOM Technology Solutions, Lincoln Laboratory
      C. McLean, MACOM Technology Solutions, Lincoln Laboratory
      D. Jin, MACOM Technology Solutions, Lincoln Laboratory
      T. Palacios, MACOM Technology Solutions, Lincoln Laboratory
      G. W. Turner, MACOM Technology Solutions, Lincoln Laboratory
      R. J. Molnar, MACOM Technology Solutions, Lincoln Laboratory
      Download Paper

  • Jr.,

    Naval Research Laboratory

    • Boron-Doped P Nanocrystalline Diamond Gate Electrode for AlGaN-GaN HEMTs

      Marko J. Tadjer, U.S. Naval Research Laboratory
      Tatyana I. Feygelson, American Society for Engineering Education, United States Naval Research Lab. Universidad Politecnica de Madrid
      Jennifer K. Hite, Naval Research Laboratory
      Bradford B. Pate, U.S. Naval Research Laboratory, Washington DC
      Charles R. Eddy, Naval Research Laboratory
      Jr., Naval Research Laboratory
      Francis J. Kub, Naval Research Laboratory
      Download Paper

  • K. Hite, Jennifer

    Naval Research Laboratory

  • K. Jana, Sanjay

    Indian Institute of Technology

    • Threading Dislocations in GaN HEMTs on Silicon: Origin of Large Time Constant Transients?

      Saptarsi Ghosh*, Indian Institute of Technology
      Ankush Bag, Indian Institute of Technology
      Partha Mukhapadhay, Indian Institute of Technology
      Syed Mukulika Dinara, Indian Institute of Technology
      Sanjay K. Jana, Indian Institute of Technology
      Sanjib Kabi, Indian Institute of Technology
      Download Paper

  • Kabi, Sanjib

    Indian Institute of Technology

    • Threading Dislocations in GaN HEMTs on Silicon: Origin of Large Time Constant Transients?

      Saptarsi Ghosh*, Indian Institute of Technology
      Ankush Bag, Indian Institute of Technology
      Partha Mukhapadhay, Indian Institute of Technology
      Syed Mukulika Dinara, Indian Institute of Technology
      Sanjay K. Jana, Indian Institute of Technology
      Sanjib Kabi, Indian Institute of Technology
      Download Paper

  • Kaleta, A.

    MACOM Technology Solutions, Lincoln Laboratory

    • Effect of Multi-Field Plates on GaN-on-Silicon HEMTs Reverse Breakdown and Leakage Characteristics

      T. Boles, MACOM Technology Solutions, Lincoln Laboratory
      D. Carlson, MACOM Technology Solutions, Lincoln Laboratory
      L. Xia, MACOM Technology Solutions, Lincoln Laboratory
      A. Kaleta, MACOM Technology Solutions, Lincoln Laboratory
      C. McLean, MACOM Technology Solutions, Lincoln Laboratory
      D. Jin, MACOM Technology Solutions, Lincoln Laboratory
      T. Palacios, MACOM Technology Solutions, Lincoln Laboratory
      G. W. Turner, MACOM Technology Solutions, Lincoln Laboratory
      R. J. Molnar, MACOM Technology Solutions, Lincoln Laboratory
      Download Paper

  • Kaleta, Anthony

    MACOM Technology Solutions

    • Reverse Leakage Current and Breakdown Voltage Improvements in GaN HEMTs and GaN Schottky Diodes

      Timothy Boles, MACOM Technology Solutions
      Ling Xia, MACOM Technology Solutions
      Allen Hanson, MACOM Technology Solutions Inc.
      Anthony Kaleta, MACOM Technology Solutions
      Download Paper

  • Kane, A.

    Air Force Research Laboratory (AFRL), Defense Advanced Research Projects Agency (DARPA) Booz Allen Hamilton

    • Recent Progress in GaN-on-Diamond Device Technology

      J.D. Blevins, Air Force Research Laboratory (AFRL), Defense Advanced Research Projects Agency (DARPA) Booz Allen Hamilton
      G.D. Via, Air Force Research Laboratory (AFRL), Defense Advanced Research Projects Agency (DARPA) Booz Allen Hamilton
      K. Chabak, Air Force Research Laboratory, Sensors Directorate
      A. Bar-Cohen, Air Force Research Laboratory (AFRL), Defense Advanced Research Projects Agency (DARPA) Booz Allen Hamilton
      J. Maurer, Air Force Research Laboratory (AFRL), Defense Advanced Research Projects Agency (DARPA) Booz Allen Hamilton
      A. Kane, Air Force Research Laboratory (AFRL), Defense Advanced Research Projects Agency (DARPA) Booz Allen Hamilton
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  • Kao, Tsung-Ting

    Georgia Institute of Technology,

    • Npn GaN/InGaN Heterojunction Bipolar Transistors Using a Palladium-Based Contact Scheme

      Yi-Che Lee, Georgia Institute of Technology
      Tsung-Ting Kao, Georgia Institute of Technology,
      Jeomoh Kim, Student Presentation
      Mi-Hee Ji, Student Presentation
      Theeradetch Detchphrom, Georgia Institute of Technology, Atlanta, GA
      Georgia Institute of Technology, Student Presentation
      Download Paper

  • Kao*, T.-T.

    Student Presentation Georgia Institute of Technology

    • Homojunction GaN p-i-n Rectifiers with Ultra-low On-state Resistance

      T.-T. Kao*, Student Presentation Georgia Institute of Technology
      J. Kim, Student Presentation Georgia Institute of Technology
      Y.-C. Lee, Student Presentation Georgia Institute of Technology
      M.-H. Ji, Student Presentation Georgia Institute of Technology
      T. Detchprohm, Student Presentation Georgia Institute of Technology
      R. D. Dupuis, Student Presentation Georgia Institute of Technology
      Download Paper

  • Kim, Dong-Hwan

    Seoul National University

    • 77 GHz Power Amplifier MMIC using 0.1 μm Double-Deck Shaped (DDS) field-plate gate AlGaN/GaN HEMTs on Si Substrate

      Dong-Hwan Kim, Seoul National University
      Ji-Hoon Kim, Seoul National University
      Su-Keun Eom, Seoul National University
      Min-Seong Lee, Seoul National University
      Download Paper

  • Kim, J.

    Student Presentation Georgia Institute of Technology

    • Homojunction GaN p-i-n Rectifiers with Ultra-low On-state Resistance

      T.-T. Kao*, Student Presentation Georgia Institute of Technology
      J. Kim, Student Presentation Georgia Institute of Technology
      Y.-C. Lee, Student Presentation Georgia Institute of Technology
      M.-H. Ji, Student Presentation Georgia Institute of Technology
      T. Detchprohm, Student Presentation Georgia Institute of Technology
      R. D. Dupuis, Student Presentation Georgia Institute of Technology
      Download Paper

  • Kim, Jeomoh

    Student Presentation

    • Npn GaN/InGaN Heterojunction Bipolar Transistors Using a Palladium-Based Contact Scheme

      Yi-Che Lee, Georgia Institute of Technology
      Tsung-Ting Kao, Georgia Institute of Technology,
      Jeomoh Kim, Student Presentation
      Mi-Hee Ji, Student Presentation
      Theeradetch Detchphrom, Georgia Institute of Technology, Atlanta, GA
      Georgia Institute of Technology, Student Presentation
      Download Paper

  • Kim, Ji-Hoon

    Seoul National University

    • 77 GHz Power Amplifier MMIC using 0.1 μm Double-Deck Shaped (DDS) field-plate gate AlGaN/GaN HEMTs on Si Substrate

      Dong-Hwan Kim, Seoul National University
      Ji-Hoon Kim, Seoul National University
      Su-Keun Eom, Seoul National University
      Min-Seong Lee, Seoul National University
      Download Paper

  • Kim, Minseok

    Student Presentation Seoul National University

    • High-performance normally-off GaN MIS-HEMTs with dual gate insulator employing PEALD SiNx interfacial layer and RF-sputtered HfO2

      Woojin Choi, Seoul National University
      Hojin Ryu, Student Presentation Seoul National University
      Ogyun Seok, Kumoh National Institute of Technology, Republic of Korea
      Minseok Kim, Student Presentation Seoul National University
      Ho-Young Cha, Student Presentation Seoul National University
      Download Paper

  • Kopp, W.

    MEC, BAE Systems, IQE

    • The First 0.2um 6-Inch GaN-on-SiC MMIC Process

      R. Isaak, MEC, BAE Systems, IQE
      J. Diaz, MEC, BAE Systems, IQE
      M. Gerlach, MEC, BAE Systems, IQE
      J. Hulse, MEC, BAE Systems, IQE
      L. Schlesinger, MEC, BAE Systems, IQE
      P. Seekell, MEC, BAE Systems, IQE
      W. Zhu, MEC, BAE Systems, IQE
      W. Kopp, MEC, BAE Systems, IQE
      X. Yang, MEC, BAE Systems, IQE
      A. Stewart, MEC, BAE Systems, IQE
      K. Chu, MEC, BAE Systems, IQE
      P. C. Chao, MEC, BAE Systems, IQE
      X. Gao, MEC, BAE Systems, IQE
      M. Pan, MEC, BAE Systems, IQE
      D. Gorka, MEC, BAE Systems, IQE
      Download Paper

  • Kowalsky, Jens

    CliftonGmbH, Chemnitz University of Technology

    • GaAs pin Diode Devices and Technology for High Power applications at 600V and above.

      Volker Dudek, CliftonGmbH, Chemnitz University of Technology
      Jens Kowalsky, CliftonGmbH, Chemnitz University of Technology
      Josef Lutz, CliftonGmbH, Chemnitz University of Technology
      Download Paper

  • Krishnan, Balakrishnan

    Papasouliotis, Veeco

    • Influence of MOCVD Growth Conditions on the Two-dimensional Electron Gas in AlGaN/GaN Heterostructures

      Jie Su, Veeco Instruments
      Balakrishnan Krishnan, Papasouliotis, Veeco
      Download Paper

  • Krost, Alois

    Institut for Experimentelle Physik

    • Homogeneity control of powerelectronic device structures by advanced in-situ metrology

      Oliver Schulz, Institut for Experimentelle Physik
      Armin Dadgar, Institut for Experimentelle Physik
      Jonas Hennig, Institut for Experimentelle Physik
      Oliver Krumm, Institut for Experimentelle Physik
      Stephanie Fritze, Institut for Experimentelle Physik
      Jürgen Bläsing, Institut for Experimentelle Physik
      Hartmut Witte, Institut for Experimentelle Physik
      Annette Diez, Institut for Experimentelle Physik
      Alois Krost, Institut for Experimentelle Physik
      LayTec AG, Institut for Experimentelle Physik
      Download Paper

  • Krumm, Oliver

    Institut for Experimentelle Physik

    • Homogeneity control of powerelectronic device structures by advanced in-situ metrology

      Oliver Schulz, Institut for Experimentelle Physik
      Armin Dadgar, Institut for Experimentelle Physik
      Jonas Hennig, Institut for Experimentelle Physik
      Oliver Krumm, Institut for Experimentelle Physik
      Stephanie Fritze, Institut for Experimentelle Physik
      Jürgen Bläsing, Institut for Experimentelle Physik
      Hartmut Witte, Institut for Experimentelle Physik
      Annette Diez, Institut for Experimentelle Physik
      Alois Krost, Institut for Experimentelle Physik
      LayTec AG, Institut for Experimentelle Physik
      Download Paper

  • Kruze, Jay

    Invited Presentation

    • Trends in RF design and technologies for mobile wireless devices

      Jay Kruze, Invited Presentation
      Download Paper

  • Kuballa, M.

    TriQuint Semiconductor

    • Temperature Measurement and Modeling of Low Thermal Resistance GaN-on-Diamond Transistors

      M. Bernardonia, TriQuint Semiconductor
      D.C. Dumkab, TriQuint Semiconductor
      D.M. Fanning, TriQuint Semiconductor
      M. Kuballa, TriQuint Semiconductor
      University of Bristol, TriQuint Semiconductor
      Download Paper

  • Kuo, Ta-Chuan

    WIN Semiconductors Corp.

    • High Efficiency and High Ruggedness InGaP/GaAs HBT EPI Design

      Rei-Bin Chiou, WIN Semiconductors Corp.
      Ta-Chuan Kuo, WIN Semiconductors Corp.
      Cheng-Kuo Lin, WIN Semiconductors Corp
      Shu-Hsiao Tsai, WIN Semiconductors Corp
      Shin-Yi Ho, National Taiwan University
      Tung-Yao Chou, WIN Semiconductors Corp.
      Dennis Williams, WIN Semiconductors Corp
      Download Paper

  • Kurpas, P.

    Ferdinand-Braun-Institut

  • Kuxa, Evgeny

    Macquarie University, Sydney Design Centre, Macom Tech. Solutions, WIN Semiconductors

    • Process control in GaAs manufacturing using Chua’s circuit

      Evgeny Kuxa, Macquarie University, Sydney Design Centre, Macom Tech. Solutions, WIN Semiconductors
      Anthony E. Parker, Macquarie University, Sydney Design Centre, Macom Tech. Solutions, WIN Semiconductors
      Simon J. Mahony, Macquarie University, Sydney Design Centre, Macom Tech. Solutions, WIN Semiconductors
      Anna Dadelloy, Macquarie University, Sydney Design Centre, Macom Tech. Solutions, WIN Semiconductors
      Wen-Kai Wangz, Macquarie University, Sydney Design Centre, Macom Tech. Solutions, WIN Semiconductors
      Michael C. Heimlich, Macquarie University, Sydney Design Centre, Macom Tech. Solutions, WIN Semiconductors
      Download Paper

  • Kwok, Kai

    • ALD HfO2, Al2O3, and PECVD Si3N4 as MIM Capacitor Dielectric for GaAs HBT Technology

      Jiro Yota
      Kai Kwok
      Skyworks Solutions
      Download Paper

  • Kyekyoon, Kevin (Kim)

    University of Illinois at Urbana-Chamapign

    • AlGaN/GaN MOS-HEMTs using RF magnetron Sputtered SiO2 Gate Insulator and Post-Annealing Treatment

      Liang Pang, University of Illinois at Urbana-Chamapign
      Ogyun Seok, Kumoh National Institute of Technology, Republic of Korea
      Kevin (Kim) Kyekyoon, University of Illinois at Urbana-Chamapign
      Download Paper

  • L. Dohrman, Carl

    Booz Allen Hamilton

  • L. Hesler, Jeffrey

    Virginia Diodes, Inc.

    • A Case Study in Support of the Captive Fabrication Facility

      Gerhard S. Schoenthal, Virginia Diodes, Inc.
      Thomas W. Crowe, Virginia Diodes, Inc.
      Jeffrey L. Hesler, Virginia Diodes, Inc.
      Download Paper

  • Laboutin, Oleg

    IQE

    • GaN on Silicon Growth by MOCVD: A Mechanistic Approach to Wafer Scaling

      Yu Cao, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Oleg Laboutin, IQE
      Chien-Fong Lo, IQE
      Kevin O’Connor, IQE
      Daily Hill, IQE
      Download Paper

    • Fabrication of GaN MISHEMTs Fabricated From GaN Grown By MOCVD on High Resistance 200mm <111> Si Substrates

      Jeffrey LaRoche, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Kelly Ip, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Mark Breen, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Yu Cao, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      John P. Bettencourt, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Doug Guenther, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Gabe Gebara, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Oleg Laboutin, IQE
      Chien-Fong, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Tina Trimble, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Download Paper

  • Lam, PL.

    • Spur-Free Dynamic Range Measurements of the Light-Emitting Transistor

      PL. Lam
      Download Paper

  • LaRoche, Jeffrey

    Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE

    • Fabrication of GaN MISHEMTs Fabricated From GaN Grown By MOCVD on High Resistance 200mm <111> Si Substrates

      Jeffrey LaRoche, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Kelly Ip, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Mark Breen, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Yu Cao, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      John P. Bettencourt, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Doug Guenther, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Gabe Gebara, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Oleg Laboutin, IQE
      Chien-Fong, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Tina Trimble, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Download Paper

  • Lee, Bryan

    Global Communication Semiconductors, LLC

    • An InGaP/GaAs DHBT with an Integrated Wide-Tuning-Range Varactor for Broad Band Monolithic VCO Applications

      Yuefei Yang, Global Communication Semiconductors, LLC
      Dave Wang, Global Communication Semiconductors, LLC
      Wing Yau, Global Communication Semiconductors, LLC
      Bryan Lee, Global Communication Semiconductors, LLC
      Dave Rasbot, Global Communication Semiconductors, LLC
      Hau Tan, Global Communication Semiconductors, LLC
      Download Paper

  • Lee, Finella

    National Taiwan University

  • Lee, Min-Seong

    Seoul National University

    • 77 GHz Power Amplifier MMIC using 0.1 μm Double-Deck Shaped (DDS) field-plate gate AlGaN/GaN HEMTs on Si Substrate

      Dong-Hwan Kim, Seoul National University
      Ji-Hoon Kim, Seoul National University
      Su-Keun Eom, Seoul National University
      Min-Seong Lee, Seoul National University
      Download Paper

  • Lee, Minseong

    Seoul National University

    • The Effects of SF6Plasma and in-situ N2Plasma Treatment on Gate Leakage, Subthreshold Slope, and Current Collapse in AlGaN/GaN HEMTs

      Neung-Hee Lee, Seoul National University
      Woojin Choi, Seoul National University
      Minseong Lee, Seoul National University
      Seonhong Choi, Seoul National University
      Download Paper

  • Lee, Neung-Hee

    Seoul National University

    • The Effects of SF6Plasma and in-situ N2Plasma Treatment on Gate Leakage, Subthreshold Slope, and Current Collapse in AlGaN/GaN HEMTs

      Neung-Hee Lee, Seoul National University
      Woojin Choi, Seoul National University
      Minseong Lee, Seoul National University
      Seonhong Choi, Seoul National University
      Download Paper

  • Lee, Y.-C.

    Student Presentation Georgia Institute of Technology

    • Homojunction GaN p-i-n Rectifiers with Ultra-low On-state Resistance

      T.-T. Kao*, Student Presentation Georgia Institute of Technology
      J. Kim, Student Presentation Georgia Institute of Technology
      Y.-C. Lee, Student Presentation Georgia Institute of Technology
      M.-H. Ji, Student Presentation Georgia Institute of Technology
      T. Detchprohm, Student Presentation Georgia Institute of Technology
      R. D. Dupuis, Student Presentation Georgia Institute of Technology
      Download Paper

  • Lee, Yi-Che

    Georgia Institute of Technology

  • Leuther, A.

    Fraunhofer Institute

    • A new approach for GaN normally-off power transistors: Lateral recess for positive threshold voltage shift

      P. Waltereit, Fraunhofer Institute
      A. Leuther, Fraunhofer Institute
      J. Rüster, Fraunhofer Institute
      H. Czap, Fraunhofer Institute
      R. Iannucci, Fraunhofer Institute
      S. Müller, Fraunhofer Institute
      Download Paper

  • Li a, Wenjun

    University of Virginia, MicroLink Devices, Inc.

    • Front-Side-Illuminated InGaAs/InP Modified UTC-Photodiodes With Cliff Layer

      Wenjun Li a, University of Virginia, MicroLink Devices, Inc.
      Andreas Beling b, University of Virginia, MicroLink Devices, Inc.
      Joe Campbell b, University of Virginia, MicroLink Devices, Inc.
      Glen Hillier c, University of Virginia, MicroLink Devices, Inc.
      Chris Stender c, University of Virginia, MicroLink Devices, Inc.
      Noren Pan c, University of Virginia, MicroLink Devices, Inc.
      University of Notre Dame, University of Virginia, MicroLink Devices, Inc.
      Download Paper

  • Lin, Che-Kai

    WIN Semiconductors Corp

  • Lin, Cheng-Kuo

    WIN Semiconductors Corp

  • Lin, Chin-Fu

    Wavetek Microelectronics Corp.

    • High-Frequency Small-Signal and Noise Characterization of the E-mode pHEMT Fabricated Using Advanced ED25 Process Technology

      Sheng-Chun Wang, Wavetek Microelectronics Corp.
      Hou-Kuei Huang, Wavetek Microelectronics Corp.
      An-Sam Peng, Wavetek Microelectronics Corp.
      Yi-Shu Lin, Wavetek Microelectronics Corp.
      Lu-Che Huang, Wavetek Microelectronics Corp.
      Chin-Fu Lin, Wavetek Microelectronics Corp.
      Sam Chou, Wavetek Microelectronics Corp.
      Houng-Chi Wei, Wavetek Microelectronics Corp.
      Download Paper

  • Lin, Jeff

    , Wavetek Microelectronics Corporation, United Microelectronics Corporation

    • Wavetek’s GaAs Manufacturing in 6” CMOS Fab

      Weber Wei, , Wavetek Microelectronics Corporation, United Microelectronics Corporation
      Jeff Lin, , Wavetek Microelectronics Corporation, United Microelectronics Corporation
      MT Wu, , Wavetek Microelectronics Corporation, United Microelectronics Corporation
      Jackie Huang, , Wavetek Microelectronics Corporation, United Microelectronics Corporation
      Sam Chou, Wavetek Microelectronics Corp.
      Amos Yen, , Wavetek Microelectronics Corporation, United Microelectronics Corporation
      CG Shih, , Wavetek Microelectronics Corporation, United Microelectronics Corporation
      Vance Su, , Wavetek Microelectronics Corporation, United Microelectronics Corporation
      Download Paper

  • Lin, Yi-Shu

    Wavetek Microelectronics Corp.

    • High-Frequency Small-Signal and Noise Characterization of the E-mode pHEMT Fabricated Using Advanced ED25 Process Technology

      Sheng-Chun Wang, Wavetek Microelectronics Corp.
      Hou-Kuei Huang, Wavetek Microelectronics Corp.
      An-Sam Peng, Wavetek Microelectronics Corp.
      Yi-Shu Lin, Wavetek Microelectronics Corp.
      Lu-Che Huang, Wavetek Microelectronics Corp.
      Chin-Fu Lin, Wavetek Microelectronics Corp.
      Sam Chou, Wavetek Microelectronics Corp.
      Houng-Chi Wei, Wavetek Microelectronics Corp.
      Download Paper

  • Lishan, D.

    Plasma-Therm LLC,

    • Productivity Improvement Using Plasma-based Die Singulation

      D. Pays-Volard, Plasma-Therm LLC,
      L. Martinez, Plasma-Therm LLC,
      K. Mackenzie, Plasma-Therm LLC,
      D. Lishan, Plasma-Therm LLC,
      Download Paper

  • Lo, Chien-Fong

    IQE

    • GaN on Silicon Growth by MOCVD: A Mechanistic Approach to Wafer Scaling

      Yu Cao, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Oleg Laboutin, IQE
      Chien-Fong Lo, IQE
      Kevin O’Connor, IQE
      Daily Hill, IQE
      Download Paper

  • Lossy, Richard

    Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH),

    • Sputtered Iridium Gate Module for GaN HEMT with Stress Engineering and High Reliability

      Richard Lossy, Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH),
      Download Paper

  • Lu, Xing

    Hong Kong University of Science and Technology

    • High Performance Self-aligned AlN-GaN MISHEMT with In-situSiNxGate Dielectric and Regrown Source-Drain

      Xing Lu, Hong Kong University of Science and Technology
      Jun Ma, Hong Kong University of Science and Technology
      Peiqiang Xu, Hong Kong University of Science and Technology
      Download Paper

  • Lutz, Josef

    CliftonGmbH, Chemnitz University of Technology

    • GaAs pin Diode Devices and Technology for High Power applications at 600V and above.

      Volker Dudek, CliftonGmbH, Chemnitz University of Technology
      Jens Kowalsky, CliftonGmbH, Chemnitz University of Technology
      Josef Lutz, CliftonGmbH, Chemnitz University of Technology
      Download Paper

  • Luu-Henderson, Lam

    Skyworks Solutions Inc.

    • An E-beam Evaporation Deposition Process for Tantalum Nitride Thin Film Resistors

      Lam Luu-Henderson, Skyworks Solutions Inc.
      Shiban Tiku, Skyworks Solutions, Inc.
      Hong Shen
      Richard Bingle
      Daniel Weaver
      Gary Hu
      Cristian Cismaru, Skyworks Solutions, Inc.
      Mike Sun, Skyworks Solutions, Inc.
      Skyworks Solutions
      formerly of Skyworks Solutions
      Download Paper

  • M. Grabar, Robert

    HRL Laboratories

    • Improvements to a mm-Wave GaN MMIC Process with Comprehensive and Efficient Process Control Monitoring

      Shawn D. Burnham, HRL Laboratories
      David F. Brown, HRL Laboratories
      Robert M. Grabar, HRL Laboratories
      Dayward R. Santos, HRL Laboratories
      Dana C. Wheeler, HRL Laboratories
      Samuel J. Kim, HRL Laboratories
      Thomas C. Oh, HRL Laboratories
      Download Paper

  • M.S., Stepanenko

    Research and Production Company Micran

    • Influence of Atomic Hydrogen Treatment on the Threshold Voltage of p-Gate High Voltage GaN Transistors

      Erofeev E.V., Research and Production Company Micran
      Arykov V.S., Research and Production Company Micran
      Kagadei V.A, Research and Production Company Micran
      Stepanenko M.S., Research and Production Company Micran
      Kazimirov A.I., Research and Production Company Micran
      Fedin I.V., Research and Production Company Micran
      Download Paper

  • Ma, Alex

    University of Alberta

    • Low-Voltage and Low-Cost ZnO Based Ultra-Thin-Film Transistors

      Gem Shoute, University of Alberta
      Alex Ma, University of Alberta
      Amir Afshar, University of Alberta
      Download Paper

    • High Breakdown Voltage ZnO Thin Film Transistors Grown by Low Temperature Atomic Layer Deposition

      Alex Ma, University of Alberta
      Amir Afshar, University of Alberta
      Gem Shoute, University of Alberta
      Kenneth Cadien, University of Alberta
      Douglas Barlage, University of Alberta
      Download Paper

  • Ma, Jun

    Hong Kong University of Science and Technology

    • High Performance Self-aligned AlN-GaN MISHEMT with In-situSiNxGate Dielectric and Regrown Source-Drain

      Xing Lu, Hong Kong University of Science and Technology
      Jun Ma, Hong Kong University of Science and Technology
      Peiqiang Xu, Hong Kong University of Science and Technology
      Download Paper

  • MaaBdorf, A.

    Ferdinand-Braun-Institute, Jenoptik Diod Lab, LayTec AG

    • SiN/Ge Lift-off: A Method for Patterning Films Deposited at High Temperature

      A. MaaBdorf, Ferdinand-Braun-Institute, Jenoptik Diod Lab, LayTec AG
      M. Zorn, JENOPTIK Diode Lab GmbH
      O. Schulz, LayTec AG
      J.-T. Zettler, LayTec AG
      Download Paper

  • Mackenzie, K.

    Plasma-Therm LLC,

    • Productivity Improvement Using Plasma-based Die Singulation

      D. Pays-Volard, Plasma-Therm LLC,
      L. Martinez, Plasma-Therm LLC,
      K. Mackenzie, Plasma-Therm LLC,
      D. Lishan, Plasma-Therm LLC,
      Download Paper

  • Maekawa, A.

    Sumitomo Electric Device Innovations, Inc.

    • A Robust Design of MMIC using Taguchi Method     

      A. Oya, Sumitomo Electric Device Innovations, Inc.
      A. Maekawa, Sumitomo Electric Device Innovations, Inc.
      H. Yamamoto, Sumitomo Electric Device Innovations, Inc.
      T. Yamamoto, Momentive Technologies
      T. Sato, Sumitomo Electric Device Innovations, Inc.
      Download Paper

  • Makabe, Isao

    Sumitomo Electric Industries, Ltd.

  • Marley, Elisabeth

    TriQuint Semiconductor, Inc.

    • Thermal Property of WNiSi Thin Film Resistor

      Xiaokang Huang, Qorvo
      Duofeng Yue, Qorvo, Inc.
      Arif Choudhury, TriQuint Semiconductor, Inc.
      Paul Horng, TriQuint Semiconductor, Inc.
      Elisabeth Marley, TriQuint Semiconductor, Inc.
      Jinhong Yang, Qorvo
      Craig Hall, Qorvo
      Harold Isom, Qorvo
      Download Paper

  • Martinez, L.

    Plasma-Therm LLC,

    • Productivity Improvement Using Plasma-based Die Singulation

      D. Pays-Volard, Plasma-Therm LLC,
      L. Martinez, Plasma-Therm LLC,
      K. Mackenzie, Plasma-Therm LLC,
      D. Lishan, Plasma-Therm LLC,
      Download Paper

  • Maruyama, M.

    Osaka University

    • Growth of bulk GaN Crystal by Na Flux Method

      Y. Mori, Osaka University
      M. Imade, Osaka University
      M. Maruyama, Osaka University
      M. Yoshimura, Osaka University
      Download Paper

  • Matsushita, Keiichi

    Toshiba Corp.

    • Effects of Field Plate and Epitaxial Wafer on AlGaN/GaN HEMTs with Active Harmonic Tuning

      Keiichi Matsushita, Toshiba Corp.
      Hiroyuki Sakurai, Toshiba Corp.
      Akio Miyao, Toshiba Corp.
      Yukio Takahasi, Toshiba Corp.
      Kazutaka Takagi, Toshiba Corp.
      Download Paper

  • Matthias, T.

    EV Group

    • Advanced bonding techniques for photonic integrated circuits

      M. Eibelhuber, EV Group
      T. Matthias, EV Group
      T. Uhrmann, EV Group
      Download Paper

  • Maurer, J.

    Air Force Research Laboratory (AFRL), Defense Advanced Research Projects Agency (DARPA) Booz Allen Hamilton

    • Recent Progress in GaN-on-Diamond Device Technology

      J.D. Blevins, Air Force Research Laboratory (AFRL), Defense Advanced Research Projects Agency (DARPA) Booz Allen Hamilton
      G.D. Via, Air Force Research Laboratory (AFRL), Defense Advanced Research Projects Agency (DARPA) Booz Allen Hamilton
      K. Chabak, Air Force Research Laboratory, Sensors Directorate
      A. Bar-Cohen, Air Force Research Laboratory (AFRL), Defense Advanced Research Projects Agency (DARPA) Booz Allen Hamilton
      J. Maurer, Air Force Research Laboratory (AFRL), Defense Advanced Research Projects Agency (DARPA) Booz Allen Hamilton
      A. Kane, Air Force Research Laboratory (AFRL), Defense Advanced Research Projects Agency (DARPA) Booz Allen Hamilton
      Download Paper

  • McLean, C.

    MACOM Technology Solutions, Lincoln Laboratory

    • Effect of Multi-Field Plates on GaN-on-Silicon HEMTs Reverse Breakdown and Leakage Characteristics

      T. Boles, MACOM Technology Solutions, Lincoln Laboratory
      D. Carlson, MACOM Technology Solutions, Lincoln Laboratory
      L. Xia, MACOM Technology Solutions, Lincoln Laboratory
      A. Kaleta, MACOM Technology Solutions, Lincoln Laboratory
      C. McLean, MACOM Technology Solutions, Lincoln Laboratory
      D. Jin, MACOM Technology Solutions, Lincoln Laboratory
      T. Palacios, MACOM Technology Solutions, Lincoln Laboratory
      G. W. Turner, MACOM Technology Solutions, Lincoln Laboratory
      R. J. Molnar, MACOM Technology Solutions, Lincoln Laboratory
      Download Paper

  • Meyuhas, Ariel

    The MAX Group

    • Precision-guided Equipment Maintenance in a Modern Foundry – Case Study

      Dimitry Gurevich, MAX I.E.G. LLC
      Ariel Meyuhas, The MAX Group
      Marino F. Arturo, MAX I.E.G. LLC
      Download Paper

  • Miller, Dain

    RF Micro Devices, Inc.

    • Yield Improvement of Voltage Regulator in Next-Generation Wifi Front-End Module

      (Tom) Cheng Peng, Qorvo, Inc.
      Patrick Carroll, Qorvo, Inc
      Tom Rogers, Qorvo, Inc.
      Dain Miller, RF Micro Devices, Inc.
      Download Paper

  • Miyao, Akio

    Toshiba Corp.

    • Effects of Field Plate and Epitaxial Wafer on AlGaN/GaN HEMTs with Active Harmonic Tuning

      Keiichi Matsushita, Toshiba Corp.
      Hiroyuki Sakurai, Toshiba Corp.
      Akio Miyao, Toshiba Corp.
      Yukio Takahasi, Toshiba Corp.
      Kazutaka Takagi, Toshiba Corp.
      Download Paper

  • Mori, Y.

    Osaka University

    • Growth of bulk GaN Crystal by Na Flux Method

      Y. Mori, Osaka University
      M. Imade, Osaka University
      M. Maruyama, Osaka University
      M. Yoshimura, Osaka University
      Download Paper

  • Motamedi, Pouyan

    University of Alberta

    • Engineered Tunneling Contacts with Low-Temperature Atomic Layer Deposition of AlN on GaN

      Kevin Voon, University of Alberta
      Kyle Bothe, University of Alberta
      Pouyan Motamedi, University of Alberta
      Douglas Barlage, University of Alberta
      Ken Cadien, University of Alberta
      Download Paper

  • Mukhapadhay, Partha

    Indian Institute of Technology

    • Threading Dislocations in GaN HEMTs on Silicon: Origin of Large Time Constant Transients?

      Saptarsi Ghosh*, Indian Institute of Technology
      Ankush Bag, Indian Institute of Technology
      Partha Mukhapadhay, Indian Institute of Technology
      Syed Mukulika Dinara, Indian Institute of Technology
      Sanjay K. Jana, Indian Institute of Technology
      Sanjib Kabi, Indian Institute of Technology
      Download Paper

  • Mukulika Dinara, Syed

    Indian Institute of Technology

    • Threading Dislocations in GaN HEMTs on Silicon: Origin of Large Time Constant Transients?

      Saptarsi Ghosh*, Indian Institute of Technology
      Ankush Bag, Indian Institute of Technology
      Partha Mukhapadhay, Indian Institute of Technology
      Syed Mukulika Dinara, Indian Institute of Technology
      Sanjay K. Jana, Indian Institute of Technology
      Sanjib Kabi, Indian Institute of Technology
      Download Paper

  • Müller, S.

    Fraunhofer Institute

    • A new approach for GaN normally-off power transistors: Lateral recess for positive threshold voltage shift

      P. Waltereit, Fraunhofer Institute
      A. Leuther, Fraunhofer Institute
      J. Rüster, Fraunhofer Institute
      H. Czap, Fraunhofer Institute
      R. Iannucci, Fraunhofer Institute
      S. Müller, Fraunhofer Institute
      Download Paper

  • Mutoh, K.

    Furukawa DenshiI Co.,Ltd.

    • The Longer life wafer tray for MOCVD -AlN ceramics (FAN090) by solid phase sintering

      N. Furukoshi, Furukawa DenshiI Co.,Ltd.
      K. Mutoh, Furukawa DenshiI Co.,Ltd.
      Y. Fukunaga, Furukawa DenshiI Co.,Ltd.
      T. Yamamura, Furukawa DenshiI Co.,Ltd.
      T. Iwata, Furukawa DenshiI Co.,Ltd.
      Download Paper

  • Nakamura, M.

    Sony Corporation

    • High Performance GaAs RF Switch with a P-Type Capping Layer

      K. Takeuchi, Sony Corporation
      S. Taniguchi, Sony Corporation
      M. Yanagita, Sony Corporation
      Y. Sasaki, Sony Corporation
      M. Nakamura, Sony Corporation
      Download Paper

  • Nishimiya, T.

    Samco Inc.

    • Recess Etching Process for AlGaN/GaN-HFET Devices Using In-Situ Monitoring

      T. Nishimiya, Samco Inc.
      Y. Sakano, Samco Inc.
      H. Ogiya, Samco Inc.
      M. Hiramoto, Samco Inc.
      Download Paper

  • O’Connor, Kevin

    IQE

    • GaN on Silicon Growth by MOCVD: A Mechanistic Approach to Wafer Scaling

      Yu Cao, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Oleg Laboutin, IQE
      Chien-Fong Lo, IQE
      Kevin O’Connor, IQE
      Daily Hill, IQE
      Download Paper

  • of Bristol, University

    TriQuint Semiconductor

    • Temperature Measurement and Modeling of Low Thermal Resistance GaN-on-Diamond Transistors

      M. Bernardonia, TriQuint Semiconductor
      D.C. Dumkab, TriQuint Semiconductor
      D.M. Fanning, TriQuint Semiconductor
      M. Kuballa, TriQuint Semiconductor
      University of Bristol, TriQuint Semiconductor
      Download Paper

  • of Notre Dame, University

    University of Virginia, MicroLink Devices, Inc.

    • Front-Side-Illuminated InGaAs/InP Modified UTC-Photodiodes With Cliff Layer

      Wenjun Li a, University of Virginia, MicroLink Devices, Inc.
      Andreas Beling b, University of Virginia, MicroLink Devices, Inc.
      Joe Campbell b, University of Virginia, MicroLink Devices, Inc.
      Glen Hillier c, University of Virginia, MicroLink Devices, Inc.
      Chris Stender c, University of Virginia, MicroLink Devices, Inc.
      Noren Pan c, University of Virginia, MicroLink Devices, Inc.
      University of Notre Dame, University of Virginia, MicroLink Devices, Inc.
      Download Paper

  • of Skyworks Solutions, formerly

    • An E-beam Evaporation Deposition Process for Tantalum Nitride Thin Film Resistors

      Lam Luu-Henderson, Skyworks Solutions Inc.
      Shiban Tiku, Skyworks Solutions, Inc.
      Hong Shen
      Richard Bingle
      Daniel Weaver
      Gary Hu
      Cristian Cismaru, Skyworks Solutions, Inc.
      Mike Sun, Skyworks Solutions, Inc.
      Skyworks Solutions
      formerly of Skyworks Solutions
      Download Paper

  • Ogiya, H.

    Samco Inc.

    • Recess Etching Process for AlGaN/GaN-HFET Devices Using In-Situ Monitoring

      T. Nishimiya, Samco Inc.
      Y. Sakano, Samco Inc.
      H. Ogiya, Samco Inc.
      M. Hiramoto, Samco Inc.
      Download Paper

  • Oku, Tomoki

    Mitsubishi Electric Corporation, Melco Semiconductor Engineering Corp.

    • Moisture resistance of insulating films for compound semiconductor devices

      Tomoki Oku, Mitsubishi Electric Corporation, Melco Semiconductor Engineering Corp.
      Manabu Okumura, Mitsubishi Electric Corporation, Melco Semiconductor Engineering Corp.
      Masahiro Totsuka, Mitsubishi Electric Corporation, Melco Semiconductor Engineering Corp.
      Download Paper

  • Okumura, Manabu

    Mitsubishi Electric Corporation, Melco Semiconductor Engineering Corp.

    • Moisture resistance of insulating films for compound semiconductor devices

      Tomoki Oku, Mitsubishi Electric Corporation, Melco Semiconductor Engineering Corp.
      Manabu Okumura, Mitsubishi Electric Corporation, Melco Semiconductor Engineering Corp.
      Masahiro Totsuka, Mitsubishi Electric Corporation, Melco Semiconductor Engineering Corp.
      Download Paper

  • Oya, A.

    Sumitomo Electric Device Innovations, Inc.

    • A Robust Design of MMIC using Taguchi Method     

      A. Oya, Sumitomo Electric Device Innovations, Inc.
      A. Maekawa, Sumitomo Electric Device Innovations, Inc.
      H. Yamamoto, Sumitomo Electric Device Innovations, Inc.
      T. Yamamoto, Momentive Technologies
      T. Sato, Sumitomo Electric Device Innovations, Inc.
      Download Paper

  • P. Bettencourt, John

    Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE

    • Fabrication of GaN MISHEMTs Fabricated From GaN Grown By MOCVD on High Resistance 200mm <111> Si Substrates

      Jeffrey LaRoche, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Kelly Ip, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Mark Breen, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Yu Cao, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      John P. Bettencourt, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Doug Guenther, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Gabe Gebara, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Oleg Laboutin, IQE
      Chien-Fong, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Tina Trimble, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Download Paper

  • P. Wagner, Brian

    Northrop Grumman Electronic Systems

    • Improvements in GeTe-Based Inline Phase-Change Switch Technology for RF Switching Applications

      Nabil El-Hinnawy, Northrop Grumman Electronic Systems
      Pavel Borodulin, Northrop Grumman Electronic Systems
      Brian P. Wagner, Northrop Grumman Electronic Systems
      Matthew R. King, Northrop Grumman Electronic Systems
      John S. Mason Jr., Northrop Grumman Electronic Systems
      Evan B. Jones, Northrop Grumman Electronic Systems
      Jeff Hartman, Northrop Grumman Electronic Systems
      Robert S. Howell, Northrop Grumman Electronic Systems
      Michael J. Lee, Northrop Grumman Electronic Systems
      Download Paper

  • Pal, Debdas

    MACOM

  • Palacios, T.

    MACOM Technology Solutions, Lincoln Laboratory

    • Effect of Multi-Field Plates on GaN-on-Silicon HEMTs Reverse Breakdown and Leakage Characteristics

      T. Boles, MACOM Technology Solutions, Lincoln Laboratory
      D. Carlson, MACOM Technology Solutions, Lincoln Laboratory
      L. Xia, MACOM Technology Solutions, Lincoln Laboratory
      A. Kaleta, MACOM Technology Solutions, Lincoln Laboratory
      C. McLean, MACOM Technology Solutions, Lincoln Laboratory
      D. Jin, MACOM Technology Solutions, Lincoln Laboratory
      T. Palacios, MACOM Technology Solutions, Lincoln Laboratory
      G. W. Turner, MACOM Technology Solutions, Lincoln Laboratory
      R. J. Molnar, MACOM Technology Solutions, Lincoln Laboratory
      Download Paper

  • Pan, M.

    MEC, BAE Systems, IQE

    • The First 0.2um 6-Inch GaN-on-SiC MMIC Process

      R. Isaak, MEC, BAE Systems, IQE
      J. Diaz, MEC, BAE Systems, IQE
      M. Gerlach, MEC, BAE Systems, IQE
      J. Hulse, MEC, BAE Systems, IQE
      L. Schlesinger, MEC, BAE Systems, IQE
      P. Seekell, MEC, BAE Systems, IQE
      W. Zhu, MEC, BAE Systems, IQE
      W. Kopp, MEC, BAE Systems, IQE
      X. Yang, MEC, BAE Systems, IQE
      A. Stewart, MEC, BAE Systems, IQE
      K. Chu, MEC, BAE Systems, IQE
      P. C. Chao, MEC, BAE Systems, IQE
      X. Gao, MEC, BAE Systems, IQE
      M. Pan, MEC, BAE Systems, IQE
      D. Gorka, MEC, BAE Systems, IQE
      Download Paper

  • Pan c, Noren

    University of Virginia, MicroLink Devices, Inc.

    • Front-Side-Illuminated InGaAs/InP Modified UTC-Photodiodes With Cliff Layer

      Wenjun Li a, University of Virginia, MicroLink Devices, Inc.
      Andreas Beling b, University of Virginia, MicroLink Devices, Inc.
      Joe Campbell b, University of Virginia, MicroLink Devices, Inc.
      Glen Hillier c, University of Virginia, MicroLink Devices, Inc.
      Chris Stender c, University of Virginia, MicroLink Devices, Inc.
      Noren Pan c, University of Virginia, MicroLink Devices, Inc.
      University of Notre Dame, University of Virginia, MicroLink Devices, Inc.
      Download Paper

  • Pang, Liang

    University of Illinois at Urbana-Chamapign

    • AlGaN/GaN MOS-HEMTs using RF magnetron Sputtered SiO2 Gate Insulator and Post-Annealing Treatment

      Liang Pang, University of Illinois at Urbana-Chamapign
      Ogyun Seok, Kumoh National Institute of Technology, Republic of Korea
      Kevin (Kim) Kyekyoon, University of Illinois at Urbana-Chamapign
      Download Paper

  • Pays-Volard, D.

    Plasma-Therm LLC,

    • Productivity Improvement Using Plasma-based Die Singulation

      D. Pays-Volard, Plasma-Therm LLC,
      L. Martinez, Plasma-Therm LLC,
      K. Mackenzie, Plasma-Therm LLC,
      D. Lishan, Plasma-Therm LLC,
      Download Paper

  • Peng , (Tom) Cheng

    Qorvo, Inc.

  • Peng, An-Sam

    Wavetek Microelectronics Corp.

    • High-Frequency Small-Signal and Noise Characterization of the E-mode pHEMT Fabricated Using Advanced ED25 Process Technology

      Sheng-Chun Wang, Wavetek Microelectronics Corp.
      Hou-Kuei Huang, Wavetek Microelectronics Corp.
      An-Sam Peng, Wavetek Microelectronics Corp.
      Yi-Shu Lin, Wavetek Microelectronics Corp.
      Lu-Che Huang, Wavetek Microelectronics Corp.
      Chin-Fu Lin, Wavetek Microelectronics Corp.
      Sam Chou, Wavetek Microelectronics Corp.
      Houng-Chi Wei, Wavetek Microelectronics Corp.
      Download Paper

  • Peng, Cheng-Wen

    WIN Semiconductors Corp.

    • Yield Enhancement of 0.25 μm GaN HEMT Foundry Technology

      Wei-Chou Wang, WIN Semiconductors Corp
      Jhih-Han Du, WIN Semiconductors Corp
      Che-Kai Lin, WIN Semiconductors Corp
      Ming-Hung Weng, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.
      Cheng-Wen Peng, WIN Semiconductors Corp.
      Wen-Kai Wang, WIN Semiconductors Corp.
      Walter Wohlmuth, Vanguard International Semiconductor Corporation, Taiwan
      Download Paper

  • Pomeroy, J. W.

    University of Bristol, Bristol, UK

  • Powers, Mike

    Agilent Technologies

    • The Effect of Ni Content on Lateral Diffusion of Alloyed Au-Ni-AuGe Ohmic Contacts in GaAs-AlGaAs pHEMT Structures

      Mike Powers, Agilent Technologies
      Download Paper

  • R. Eddy, Charles

    Naval Research Laboratory

    • Boron-Doped P Nanocrystalline Diamond Gate Electrode for AlGaN-GaN HEMTs

      Marko J. Tadjer, U.S. Naval Research Laboratory
      Tatyana I. Feygelson, American Society for Engineering Education, United States Naval Research Lab. Universidad Politecnica de Madrid
      Jennifer K. Hite, Naval Research Laboratory
      Bradford B. Pate, U.S. Naval Research Laboratory, Washington DC
      Charles R. Eddy, Naval Research Laboratory
      Jr., Naval Research Laboratory
      Francis J. Kub, Naval Research Laboratory
      Download Paper

  • R. King, Matthew

    Northrop Grumman Electronic Systems

    • Improvements in GeTe-Based Inline Phase-Change Switch Technology for RF Switching Applications

      Nabil El-Hinnawy, Northrop Grumman Electronic Systems
      Pavel Borodulin, Northrop Grumman Electronic Systems
      Brian P. Wagner, Northrop Grumman Electronic Systems
      Matthew R. King, Northrop Grumman Electronic Systems
      John S. Mason Jr., Northrop Grumman Electronic Systems
      Evan B. Jones, Northrop Grumman Electronic Systems
      Jeff Hartman, Northrop Grumman Electronic Systems
      Robert S. Howell, Northrop Grumman Electronic Systems
      Michael J. Lee, Northrop Grumman Electronic Systems
      Download Paper

  • R. Santos, Dayward

    HRL Laboratories

    • Improvements to a mm-Wave GaN MMIC Process with Comprehensive and Efficient Process Control Monitoring

      Shawn D. Burnham, HRL Laboratories
      David F. Brown, HRL Laboratories
      Robert M. Grabar, HRL Laboratories
      Dayward R. Santos, HRL Laboratories
      Dana C. Wheeler, HRL Laboratories
      Samuel J. Kim, HRL Laboratories
      Thomas C. Oh, HRL Laboratories
      Download Paper

  • Rasbot, Dave

    Global Communication Semiconductors, LLC

    • An InGaP/GaAs DHBT with an Integrated Wide-Tuning-Range Varactor for Broad Band Monolithic VCO Applications

      Yuefei Yang, Global Communication Semiconductors, LLC
      Dave Wang, Global Communication Semiconductors, LLC
      Wing Yau, Global Communication Semiconductors, LLC
      Bryan Lee, Global Communication Semiconductors, LLC
      Dave Rasbot, Global Communication Semiconductors, LLC
      Hau Tan, Global Communication Semiconductors, LLC
      Download Paper

  • Riege, Jens

    Skyworks Solutions, Inc.

    • A Mathematical Model to Determine the Impact of Through-Wafer-Vias on Backside Plating Thickness

      Jens Riege, Skyworks Solutions, Inc.
      Skyworks Solutions
      Download Paper

    • Improved Availability for Copper Plater Tools

      Patrick Santos, Skyworks Solutions, Inc.
      Jens Riege, Skyworks Solutions, Inc.
      Download Paper

  • Rogers, Tom

    Qorvo, Inc.

  • Rüster, J.

    Fraunhofer Institute

    • A new approach for GaN normally-off power transistors: Lateral recess for positive threshold voltage shift

      P. Waltereit, Fraunhofer Institute
      A. Leuther, Fraunhofer Institute
      J. Rüster, Fraunhofer Institute
      H. Czap, Fraunhofer Institute
      R. Iannucci, Fraunhofer Institute
      S. Müller, Fraunhofer Institute
      Download Paper

  • Ryu, Hojin

    Student Presentation Seoul National University

    • High-performance normally-off GaN MIS-HEMTs with dual gate insulator employing PEALD SiNx interfacial layer and RF-sputtered HfO2

      Woojin Choi, Seoul National University
      Hojin Ryu, Student Presentation Seoul National University
      Ogyun Seok, Kumoh National Institute of Technology, Republic of Korea
      Minseok Kim, Student Presentation Seoul National University
      Ho-Young Cha, Student Presentation Seoul National University
      Download Paper

  • S. Green, Daniel

    DARPA

  • S. Howell, Robert

    Northrop Grumman Electronic Systems

    • Improvements in GeTe-Based Inline Phase-Change Switch Technology for RF Switching Applications

      Nabil El-Hinnawy, Northrop Grumman Electronic Systems
      Pavel Borodulin, Northrop Grumman Electronic Systems
      Brian P. Wagner, Northrop Grumman Electronic Systems
      Matthew R. King, Northrop Grumman Electronic Systems
      John S. Mason Jr., Northrop Grumman Electronic Systems
      Evan B. Jones, Northrop Grumman Electronic Systems
      Jeff Hartman, Northrop Grumman Electronic Systems
      Robert S. Howell, Northrop Grumman Electronic Systems
      Michael J. Lee, Northrop Grumman Electronic Systems
      Download Paper

  • S. Mason Jr., John

    Northrop Grumman Electronic Systems

    • Improvements in GeTe-Based Inline Phase-Change Switch Technology for RF Switching Applications

      Nabil El-Hinnawy, Northrop Grumman Electronic Systems
      Pavel Borodulin, Northrop Grumman Electronic Systems
      Brian P. Wagner, Northrop Grumman Electronic Systems
      Matthew R. King, Northrop Grumman Electronic Systems
      John S. Mason Jr., Northrop Grumman Electronic Systems
      Evan B. Jones, Northrop Grumman Electronic Systems
      Jeff Hartman, Northrop Grumman Electronic Systems
      Robert S. Howell, Northrop Grumman Electronic Systems
      Michael J. Lee, Northrop Grumman Electronic Systems
      Download Paper

  • S. Schoenthal, Gerhard

    Virginia Diodes, Inc.

    • A Case Study in Support of the Captive Fabrication Facility

      Gerhard S. Schoenthal, Virginia Diodes, Inc.
      Thomas W. Crowe, Virginia Diodes, Inc.
      Jeffrey L. Hesler, Virginia Diodes, Inc.
      Download Paper

  • Sakaida, Yoshiki

    University of Fukui

    • Improved current collapse inAlGaN-GaN HEMTs by O2plasma treatment

      Yoshiki Sakaida, University of Fukui
      Download Paper

  • Sakano, Y.

    Samco Inc.

    • Recess Etching Process for AlGaN/GaN-HFET Devices Using In-Situ Monitoring

      T. Nishimiya, Samco Inc.
      Y. Sakano, Samco Inc.
      H. Ogiya, Samco Inc.
      M. Hiramoto, Samco Inc.
      Download Paper

  • Sakurai, Hiroyuki

    Toshiba Corp.

    • Effects of Field Plate and Epitaxial Wafer on AlGaN/GaN HEMTs with Active Harmonic Tuning

      Keiichi Matsushita, Toshiba Corp.
      Hiroyuki Sakurai, Toshiba Corp.
      Akio Miyao, Toshiba Corp.
      Yukio Takahasi, Toshiba Corp.
      Kazutaka Takagi, Toshiba Corp.
      Download Paper

  • Santos, Patrick

    Skyworks Solutions, Inc.

    • GaAs Wafer Breakage Reduction

      Bruce Darley, Skyworks Solutions Inc.
      Manjeet Singh, Skyworks Solutions, Inc.
      Ernesto Ambrozio, Skyworks Solutions Inc.
      Patrick Santos, Skyworks Solutions, Inc.
      Download Paper

    • Improved Availability for Copper Plater Tools

      Patrick Santos, Skyworks Solutions, Inc.
      Jens Riege, Skyworks Solutions, Inc.
      Download Paper

  • Sasaki, Y.

    Sony Corporation

    • High Performance GaAs RF Switch with a P-Type Capping Layer

      K. Takeuchi, Sony Corporation
      S. Taniguchi, Sony Corporation
      M. Yanagita, Sony Corporation
      Y. Sasaki, Sony Corporation
      M. Nakamura, Sony Corporation
      Download Paper

  • Sato, T.

    Sumitomo Electric Device Innovations, Inc.

    • A Robust Design of MMIC using Taguchi Method     

      A. Oya, Sumitomo Electric Device Innovations, Inc.
      A. Maekawa, Sumitomo Electric Device Innovations, Inc.
      H. Yamamoto, Sumitomo Electric Device Innovations, Inc.
      T. Yamamoto, Momentive Technologies
      T. Sato, Sumitomo Electric Device Innovations, Inc.
      Download Paper

  • Schlesinger, L.

    MEC, BAE Systems, IQE

    • The First 0.2um 6-Inch GaN-on-SiC MMIC Process

      R. Isaak, MEC, BAE Systems, IQE
      J. Diaz, MEC, BAE Systems, IQE
      M. Gerlach, MEC, BAE Systems, IQE
      J. Hulse, MEC, BAE Systems, IQE
      L. Schlesinger, MEC, BAE Systems, IQE
      P. Seekell, MEC, BAE Systems, IQE
      W. Zhu, MEC, BAE Systems, IQE
      W. Kopp, MEC, BAE Systems, IQE
      X. Yang, MEC, BAE Systems, IQE
      A. Stewart, MEC, BAE Systems, IQE
      K. Chu, MEC, BAE Systems, IQE
      P. C. Chao, MEC, BAE Systems, IQE
      X. Gao, MEC, BAE Systems, IQE
      M. Pan, MEC, BAE Systems, IQE
      D. Gorka, MEC, BAE Systems, IQE
      Download Paper

  • Schulz, O.

    LayTec AG

  • Schulz, Oliver

    Institut for Experimentelle Physik

    • Homogeneity control of powerelectronic device structures by advanced in-situ metrology

      Oliver Schulz, Institut for Experimentelle Physik
      Armin Dadgar, Institut for Experimentelle Physik
      Jonas Hennig, Institut for Experimentelle Physik
      Oliver Krumm, Institut for Experimentelle Physik
      Stephanie Fritze, Institut for Experimentelle Physik
      Jürgen Bläsing, Institut for Experimentelle Physik
      Hartmut Witte, Institut for Experimentelle Physik
      Annette Diez, Institut for Experimentelle Physik
      Alois Krost, Institut for Experimentelle Physik
      LayTec AG, Institut for Experimentelle Physik
      Download Paper

  • Seekell, P.

    MEC, BAE Systems, IQE

    • The First 0.2um 6-Inch GaN-on-SiC MMIC Process

      R. Isaak, MEC, BAE Systems, IQE
      J. Diaz, MEC, BAE Systems, IQE
      M. Gerlach, MEC, BAE Systems, IQE
      J. Hulse, MEC, BAE Systems, IQE
      L. Schlesinger, MEC, BAE Systems, IQE
      P. Seekell, MEC, BAE Systems, IQE
      W. Zhu, MEC, BAE Systems, IQE
      W. Kopp, MEC, BAE Systems, IQE
      X. Yang, MEC, BAE Systems, IQE
      A. Stewart, MEC, BAE Systems, IQE
      K. Chu, MEC, BAE Systems, IQE
      P. C. Chao, MEC, BAE Systems, IQE
      X. Gao, MEC, BAE Systems, IQE
      M. Pan, MEC, BAE Systems, IQE
      D. Gorka, MEC, BAE Systems, IQE
      Download Paper

  • Semiconductor, TriQuint

    • Implementing Simple Automation on Legacy Equipment without OEM Support

      TriQuint Semiconductor
      Download Paper

  • Seok, Ogyun

    Kumoh National Institute of Technology, Republic of Korea

    • High-performance normally-off GaN MIS-HEMTs with dual gate insulator employing PEALD SiNx interfacial layer and RF-sputtered HfO2

      Woojin Choi, Seoul National University
      Hojin Ryu, Student Presentation Seoul National University
      Ogyun Seok, Kumoh National Institute of Technology, Republic of Korea
      Minseok Kim, Student Presentation Seoul National University
      Ho-Young Cha, Student Presentation Seoul National University
      Download Paper

    • AlGaN/GaN MOS-HEMTs using RF magnetron Sputtered SiO2 Gate Insulator and Post-Annealing Treatment

      Liang Pang, University of Illinois at Urbana-Chamapign
      Ogyun Seok, Kumoh National Institute of Technology, Republic of Korea
      Kevin (Kim) Kyekyoon, University of Illinois at Urbana-Chamapign
      Download Paper

  • Shen, Hong

    • An E-beam Evaporation Deposition Process for Tantalum Nitride Thin Film Resistors

      Lam Luu-Henderson, Skyworks Solutions Inc.
      Shiban Tiku, Skyworks Solutions, Inc.
      Hong Shen
      Richard Bingle
      Daniel Weaver
      Gary Hu
      Cristian Cismaru, Skyworks Solutions, Inc.
      Mike Sun, Skyworks Solutions, Inc.
      Skyworks Solutions
      formerly of Skyworks Solutions
      Download Paper

  • Shih, CG

    , Wavetek Microelectronics Corporation, United Microelectronics Corporation

    • Wavetek’s GaAs Manufacturing in 6” CMOS Fab

      Weber Wei, , Wavetek Microelectronics Corporation, United Microelectronics Corporation
      Jeff Lin, , Wavetek Microelectronics Corporation, United Microelectronics Corporation
      MT Wu, , Wavetek Microelectronics Corporation, United Microelectronics Corporation
      Jackie Huang, , Wavetek Microelectronics Corporation, United Microelectronics Corporation
      Sam Chou, Wavetek Microelectronics Corp.
      Amos Yen, , Wavetek Microelectronics Corporation, United Microelectronics Corporation
      CG Shih, , Wavetek Microelectronics Corporation, United Microelectronics Corporation
      Vance Su, , Wavetek Microelectronics Corporation, United Microelectronics Corporation
      Download Paper

  • Shoute, Gem

    University of Alberta

    • Low-Voltage and Low-Cost ZnO Based Ultra-Thin-Film Transistors

      Gem Shoute, University of Alberta
      Alex Ma, University of Alberta
      Amir Afshar, University of Alberta
      Download Paper

    • High Breakdown Voltage ZnO Thin Film Transistors Grown by Low Temperature Atomic Layer Deposition

      Alex Ma, University of Alberta
      Amir Afshar, University of Alberta
      Gem Shoute, University of Alberta
      Kenneth Cadien, University of Alberta
      Douglas Barlage, University of Alberta
      Download Paper

  • Silvestri, M.

    University of Bristol, NXP Semiconductors Belgium and Netherlands

    • Need for Defects in Floating-Buffer AlGaN/GaN HEMTs

      M.J. Uren, University of Bristol, Bristol, UK
      M. Silvestri, University of Bristol, NXP Semiconductors Belgium and Netherlands
      M. Cäsar, University of Bristol, NXP Semiconductors Belgium and Netherlands
      J. W. Pomeroy, University of Bristol, Bristol, UK
      G.A.M. Hurkx*, University of Bristol, NXP Semiconductors Belgium and Netherlands
      J.A. Croon+, University of Bristol, NXP Semiconductors Belgium and Netherlands
      J. Šonský*, University of Bristol, NXP Semiconductors Belgium and Netherlands
      Download Paper

  • Singh, Manjeet

    Skyworks Solutions, Inc.

    • GaAs Wafer Breakage Reduction

      Bruce Darley, Skyworks Solutions Inc.
      Manjeet Singh, Skyworks Solutions, Inc.
      Ernesto Ambrozio, Skyworks Solutions Inc.
      Patrick Santos, Skyworks Solutions, Inc.
      Download Paper

  • Solutions, Skyworks

    • A Mathematical Model to Determine the Impact of Through-Wafer-Vias on Backside Plating Thickness

      Jens Riege, Skyworks Solutions, Inc.
      Skyworks Solutions
      Download Paper

    • ALD HfO2, Al2O3, and PECVD Si3N4 as MIM Capacitor Dielectric for GaAs HBT Technology

      Jiro Yota
      Kai Kwok
      Skyworks Solutions
      Download Paper

    • An E-beam Evaporation Deposition Process for Tantalum Nitride Thin Film Resistors

      Lam Luu-Henderson, Skyworks Solutions Inc.
      Shiban Tiku, Skyworks Solutions, Inc.
      Hong Shen
      Richard Bingle
      Daniel Weaver
      Gary Hu
      Cristian Cismaru, Skyworks Solutions, Inc.
      Mike Sun, Skyworks Solutions, Inc.
      Skyworks Solutions
      formerly of Skyworks Solutions
      Download Paper

  • Šonský*, J.

    University of Bristol, NXP Semiconductors Belgium and Netherlands

    • Need for Defects in Floating-Buffer AlGaN/GaN HEMTs

      M.J. Uren, University of Bristol, Bristol, UK
      M. Silvestri, University of Bristol, NXP Semiconductors Belgium and Netherlands
      M. Cäsar, University of Bristol, NXP Semiconductors Belgium and Netherlands
      J. W. Pomeroy, University of Bristol, Bristol, UK
      G.A.M. Hurkx*, University of Bristol, NXP Semiconductors Belgium and Netherlands
      J.A. Croon+, University of Bristol, NXP Semiconductors Belgium and Netherlands
      J. Šonský*, University of Bristol, NXP Semiconductors Belgium and Netherlands
      Download Paper

  • Specht, Petra

    University of California in Berkeley

    • Finding (point) defects in (nitride-based) device structures using TEM imaging techniques

      Petra Specht, University of California in Berkeley
      Download Paper

  • Stender c, Chris

    University of Virginia, MicroLink Devices, Inc.

    • Front-Side-Illuminated InGaAs/InP Modified UTC-Photodiodes With Cliff Layer

      Wenjun Li a, University of Virginia, MicroLink Devices, Inc.
      Andreas Beling b, University of Virginia, MicroLink Devices, Inc.
      Joe Campbell b, University of Virginia, MicroLink Devices, Inc.
      Glen Hillier c, University of Virginia, MicroLink Devices, Inc.
      Chris Stender c, University of Virginia, MicroLink Devices, Inc.
      Noren Pan c, University of Virginia, MicroLink Devices, Inc.
      University of Notre Dame, University of Virginia, MicroLink Devices, Inc.
      Download Paper

  • Stewart, A.

    MEC, BAE Systems, IQE

    • The First 0.2um 6-Inch GaN-on-SiC MMIC Process

      R. Isaak, MEC, BAE Systems, IQE
      J. Diaz, MEC, BAE Systems, IQE
      M. Gerlach, MEC, BAE Systems, IQE
      J. Hulse, MEC, BAE Systems, IQE
      L. Schlesinger, MEC, BAE Systems, IQE
      P. Seekell, MEC, BAE Systems, IQE
      W. Zhu, MEC, BAE Systems, IQE
      W. Kopp, MEC, BAE Systems, IQE
      X. Yang, MEC, BAE Systems, IQE
      A. Stewart, MEC, BAE Systems, IQE
      K. Chu, MEC, BAE Systems, IQE
      P. C. Chao, MEC, BAE Systems, IQE
      X. Gao, MEC, BAE Systems, IQE
      M. Pan, MEC, BAE Systems, IQE
      D. Gorka, MEC, BAE Systems, IQE
      Download Paper

  • Su, Jie

    Veeco Instruments

    • Influence of MOCVD Growth Conditions on the Two-dimensional Electron Gas in AlGaN/GaN Heterostructures

      Jie Su, Veeco Instruments
      Balakrishnan Krishnan, Papasouliotis, Veeco
      Download Paper

  • Su, Liang-Yu

    National Taiwan University

  • Su, Vance

    , Wavetek Microelectronics Corporation, United Microelectronics Corporation

    • Wavetek’s GaAs Manufacturing in 6” CMOS Fab

      Weber Wei, , Wavetek Microelectronics Corporation, United Microelectronics Corporation
      Jeff Lin, , Wavetek Microelectronics Corporation, United Microelectronics Corporation
      MT Wu, , Wavetek Microelectronics Corporation, United Microelectronics Corporation
      Jackie Huang, , Wavetek Microelectronics Corporation, United Microelectronics Corporation
      Sam Chou, Wavetek Microelectronics Corp.
      Amos Yen, , Wavetek Microelectronics Corporation, United Microelectronics Corporation
      CG Shih, , Wavetek Microelectronics Corporation, United Microelectronics Corporation
      Vance Su, , Wavetek Microelectronics Corporation, United Microelectronics Corporation
      Download Paper

  • Sun, Mike

    Skyworks Solutions, Inc.

    • An E-beam Evaporation Deposition Process for Tantalum Nitride Thin Film Resistors

      Lam Luu-Henderson, Skyworks Solutions Inc.
      Shiban Tiku, Skyworks Solutions, Inc.
      Hong Shen
      Richard Bingle
      Daniel Weaver
      Gary Hu
      Cristian Cismaru, Skyworks Solutions, Inc.
      Mike Sun, Skyworks Solutions, Inc.
      Skyworks Solutions
      formerly of Skyworks Solutions
      Download Paper

  • Taiwan University, National

    • Process Variations to Normally-off GaN HEMTs on Si with p-GaN Cap Layer

      Liang-Yu Su, National Taiwan University
      Finella Lee, National Taiwan University
      National Taiwan University
      Download Paper

  • Takagi, Kazutaka

    Toshiba Corp.

    • Effects of Field Plate and Epitaxial Wafer on AlGaN/GaN HEMTs with Active Harmonic Tuning

      Keiichi Matsushita, Toshiba Corp.
      Hiroyuki Sakurai, Toshiba Corp.
      Akio Miyao, Toshiba Corp.
      Yukio Takahasi, Toshiba Corp.
      Kazutaka Takagi, Toshiba Corp.
      Download Paper

  • Takahasi, Yukio

    Toshiba Corp.

    • Effects of Field Plate and Epitaxial Wafer on AlGaN/GaN HEMTs with Active Harmonic Tuning

      Keiichi Matsushita, Toshiba Corp.
      Hiroyuki Sakurai, Toshiba Corp.
      Akio Miyao, Toshiba Corp.
      Yukio Takahasi, Toshiba Corp.
      Kazutaka Takagi, Toshiba Corp.
      Download Paper

  • Takeuchi, K.

    Sony Corporation

    • High Performance GaAs RF Switch with a P-Type Capping Layer

      K. Takeuchi, Sony Corporation
      S. Taniguchi, Sony Corporation
      M. Yanagita, Sony Corporation
      Y. Sasaki, Sony Corporation
      M. Nakamura, Sony Corporation
      Download Paper

  • Tan, Hau

    Global Communication Semiconductors, LLC

    • An InGaP/GaAs DHBT with an Integrated Wide-Tuning-Range Varactor for Broad Band Monolithic VCO Applications

      Yuefei Yang, Global Communication Semiconductors, LLC
      Dave Wang, Global Communication Semiconductors, LLC
      Wing Yau, Global Communication Semiconductors, LLC
      Bryan Lee, Global Communication Semiconductors, LLC
      Dave Rasbot, Global Communication Semiconductors, LLC
      Hau Tan, Global Communication Semiconductors, LLC
      Download Paper

  • Tang, Zhikai

    The Hong Kong University of Science and Technology

  • Taniguchi, S.

    Sony Corporation

    • High Performance GaAs RF Switch with a P-Type Capping Layer

      K. Takeuchi, Sony Corporation
      S. Taniguchi, Sony Corporation
      M. Yanagita, Sony Corporation
      Y. Sasaki, Sony Corporation
      M. Nakamura, Sony Corporation
      Download Paper

  • Tateno, Yasunori

    Sumitomo Electric Industries, Ltd.

    • An Optical 150-nm Y-Gate Process for InAlN/GaN HEMTs

      Hiroyuki Ichikawa, Sumitomo Electric Industries, Ltd.
      Isao Makabe, Sumitomo Electric Industries, Ltd.
      Yasunori Tateno, Sumitomo Electric Industries, Ltd.
      Download Paper

  • Tiku, Shiban

    Skyworks Solutions, Inc.

    • An E-beam Evaporation Deposition Process for Tantalum Nitride Thin Film Resistors

      Lam Luu-Henderson, Skyworks Solutions Inc.
      Shiban Tiku, Skyworks Solutions, Inc.
      Hong Shen
      Richard Bingle
      Daniel Weaver
      Gary Hu
      Cristian Cismaru, Skyworks Solutions, Inc.
      Mike Sun, Skyworks Solutions, Inc.
      Skyworks Solutions
      formerly of Skyworks Solutions
      Download Paper

  • Tokuda, Yutaka

    Aichi Institute of Technology

    • Traps in MOCVD n-GaN studied by deep level transient spectroscopy and minority carrier transient spectroscopy

      Yutaka Tokuda, Aichi Institute of Technology
      Download Paper

  • Totsuka, Masahiro

    Mitsubishi Electric Corporation, Melco Semiconductor Engineering Corp.

    • Moisture resistance of insulating films for compound semiconductor devices

      Tomoki Oku, Mitsubishi Electric Corporation, Melco Semiconductor Engineering Corp.
      Manabu Okumura, Mitsubishi Electric Corporation, Melco Semiconductor Engineering Corp.
      Masahiro Totsuka, Mitsubishi Electric Corporation, Melco Semiconductor Engineering Corp.
      Download Paper

  • Townley, Scott

    Invited Presentation Verizon Corporate Technology

    • Wireless Communications 2020

      Scott Townley, Invited Presentation Verizon Corporate Technology
      Download Paper

  • Trimble, Tina

    Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE

    • Fabrication of GaN MISHEMTs Fabricated From GaN Grown By MOCVD on High Resistance 200mm <111> Si Substrates

      Jeffrey LaRoche, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Kelly Ip, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Mark Breen, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Yu Cao, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      John P. Bettencourt, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Doug Guenther, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Gabe Gebara, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Oleg Laboutin, IQE
      Chien-Fong, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Tina Trimble, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
      Download Paper

  • Tsai, Shu-Hsiao

    WIN Semiconductors Corp

  • Uhrmann, T.

    EV Group

    • Advanced bonding techniques for photonic integrated circuits

      M. Eibelhuber, EV Group
      T. Matthias, EV Group
      T. Uhrmann, EV Group
      Download Paper

  • Uren, M.J.

    University of Bristol, Bristol, UK

    • Need for Defects in Floating-Buffer AlGaN/GaN HEMTs

      M.J. Uren, University of Bristol, Bristol, UK
      M. Silvestri, University of Bristol, NXP Semiconductors Belgium and Netherlands
      M. Cäsar, University of Bristol, NXP Semiconductors Belgium and Netherlands
      J. W. Pomeroy, University of Bristol, Bristol, UK
      G.A.M. Hurkx*, University of Bristol, NXP Semiconductors Belgium and Netherlands
      J.A. Croon+, University of Bristol, NXP Semiconductors Belgium and Netherlands
      J. Šonský*, University of Bristol, NXP Semiconductors Belgium and Netherlands
      Download Paper

  • V. Felmetsger, Valeriy

    , OEM Group Inc.

    • RF Magnetron Sputtering Process of P-Type NiO Thin Films Suitable for Mass Production of Compound Semiconductor Devices

      Valeriy V. Felmetsger, , OEM Group Inc.
      Download Paper

  • V. Thompson, Carl.

    Massachusetts Institute of Technology

    • Electrochemical Degradation Mechanisms in AlGaN/GaN HEMTs

      Feng Gao, Massachusetts Institute of Technology
      Carl. V. Thompson, Massachusetts Institute of Technology
      Download Paper

  • V.A, Kagadei

    Research and Production Company Micran

    • Influence of Atomic Hydrogen Treatment on the Threshold Voltage of p-Gate High Voltage GaN Transistors

      Erofeev E.V., Research and Production Company Micran
      Arykov V.S., Research and Production Company Micran
      Kagadei V.A, Research and Production Company Micran
      Stepanenko M.S., Research and Production Company Micran
      Kazimirov A.I., Research and Production Company Micran
      Fedin I.V., Research and Production Company Micran
      Download Paper

  • V.S., Arykov

    Research and Production Company Micran

    • Influence of Atomic Hydrogen Treatment on the Threshold Voltage of p-Gate High Voltage GaN Transistors

      Erofeev E.V., Research and Production Company Micran
      Arykov V.S., Research and Production Company Micran
      Kagadei V.A, Research and Production Company Micran
      Stepanenko M.S., Research and Production Company Micran
      Kazimirov A.I., Research and Production Company Micran
      Fedin I.V., Research and Production Company Micran
      Download Paper

  • Via, G.D.

    Air Force Research Laboratory (AFRL), Defense Advanced Research Projects Agency (DARPA) Booz Allen Hamilton

    • GaN Reliability – Where We Are and Where We Need to Go

      G.D. Via, Air Force Research Laboratory (AFRL), Defense Advanced Research Projects Agency (DARPA) Booz Allen Hamilton
      AFRL
      Download Paper

    • Recent Progress in GaN-on-Diamond Device Technology

      J.D. Blevins, Air Force Research Laboratory (AFRL), Defense Advanced Research Projects Agency (DARPA) Booz Allen Hamilton
      G.D. Via, Air Force Research Laboratory (AFRL), Defense Advanced Research Projects Agency (DARPA) Booz Allen Hamilton
      K. Chabak, Air Force Research Laboratory, Sensors Directorate
      A. Bar-Cohen, Air Force Research Laboratory (AFRL), Defense Advanced Research Projects Agency (DARPA) Booz Allen Hamilton
      J. Maurer, Air Force Research Laboratory (AFRL), Defense Advanced Research Projects Agency (DARPA) Booz Allen Hamilton
      A. Kane, Air Force Research Laboratory (AFRL), Defense Advanced Research Projects Agency (DARPA) Booz Allen Hamilton
      Download Paper

  • Voon, Kevin

    University of Alberta

    • Engineered Tunneling Contacts with Low-Temperature Atomic Layer Deposition of AlN on GaN

      Kevin Voon, University of Alberta
      Kyle Bothe, University of Alberta
      Pouyan Motamedi, University of Alberta
      Douglas Barlage, University of Alberta
      Ken Cadien, University of Alberta
      Download Paper

  • W. Crowe, Thomas

    Virginia Diodes, Inc.

    • A Case Study in Support of the Captive Fabrication Facility

      Gerhard S. Schoenthal, Virginia Diodes, Inc.
      Thomas W. Crowe, Virginia Diodes, Inc.
      Jeffrey L. Hesler, Virginia Diodes, Inc.
      Download Paper

  • W. Turner, G.

    MACOM Technology Solutions, Lincoln Laboratory

    • Effect of Multi-Field Plates on GaN-on-Silicon HEMTs Reverse Breakdown and Leakage Characteristics

      T. Boles, MACOM Technology Solutions, Lincoln Laboratory
      D. Carlson, MACOM Technology Solutions, Lincoln Laboratory
      L. Xia, MACOM Technology Solutions, Lincoln Laboratory
      A. Kaleta, MACOM Technology Solutions, Lincoln Laboratory
      C. McLean, MACOM Technology Solutions, Lincoln Laboratory
      D. Jin, MACOM Technology Solutions, Lincoln Laboratory
      T. Palacios, MACOM Technology Solutions, Lincoln Laboratory
      G. W. Turner, MACOM Technology Solutions, Lincoln Laboratory
      R. J. Molnar, MACOM Technology Solutions, Lincoln Laboratory
      Download Paper

  • Waltereit, P.

    Fraunhofer Institute

    • A new approach for GaN normally-off power transistors: Lateral recess for positive threshold voltage shift

      P. Waltereit, Fraunhofer Institute
      A. Leuther, Fraunhofer Institute
      J. Rüster, Fraunhofer Institute
      H. Czap, Fraunhofer Institute
      R. Iannucci, Fraunhofer Institute
      S. Müller, Fraunhofer Institute
      Download Paper

  • Wang, Ashu

    American Society for Engineering Education, United States Naval Research Lab. Universidad Politecnica de Madrid

    • Diamond-coated High Density Vias for Silicon Substrate-side Thermal Management of GaN HEMTs

      Marko J. Tadjer, U.S. Naval Research Laboratory
      Tatyana I. Feygelson, American Society for Engineering Education, United States Naval Research Lab. Universidad Politecnica de Madrid
      Ashu Wang, American Society for Engineering Education, United States Naval Research Lab. Universidad Politecnica de Madrid
      Bradford B. Pate, U.S. Naval Research Laboratory, Washington DC
      Fritz J. Kub, U.S. Naval Research Laboratory
      Download Paper

  • Wang, Dave

    Global Communication Semiconductors, LLC

    • An InGaP/GaAs DHBT with an Integrated Wide-Tuning-Range Varactor for Broad Band Monolithic VCO Applications

      Yuefei Yang, Global Communication Semiconductors, LLC
      Dave Wang, Global Communication Semiconductors, LLC
      Wing Yau, Global Communication Semiconductors, LLC
      Bryan Lee, Global Communication Semiconductors, LLC
      Dave Rasbot, Global Communication Semiconductors, LLC
      Hau Tan, Global Communication Semiconductors, LLC
      Download Paper

  • Wang, Fraser

    WIN Semiconductors Corp

    • Quality and throughput improvement of GaN/SiC wafer saw with the addition of ultrasonic power          

      Fraser Wang, WIN Semiconductors Corp
      Vincent Hsu, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.
      Stanley Hsieh, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.
      Download Paper

    • Method for Forming Through Wafer Vias in GaN on SiC Devices and Circuits

      Chia-Hao Chen, WIN Semiconductors Corp
      Yu-Wei Chang, WIN Semiconductors Corp
      Ming-Hung Weng, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.
      Ricky Chang, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.
      Shih-Hui Huang, WIN Semiconductors Corp
      Fraser Wang, WIN Semiconductors Corp
      Yi-Feng Wei, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.
      Stanley Hsieh, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.
      Download Paper

  • Wang, Sheng-Chun

    Wavetek Microelectronics Corp.

  • Wang, Wei-Chou

    WIN Semiconductors Corp

  • Wang, Wen-Kai

    WIN Semiconductors Corp.

    • Yield Enhancement of 0.25 μm GaN HEMT Foundry Technology

      Wei-Chou Wang, WIN Semiconductors Corp
      Jhih-Han Du, WIN Semiconductors Corp
      Che-Kai Lin, WIN Semiconductors Corp
      Ming-Hung Weng, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.
      Cheng-Wen Peng, WIN Semiconductors Corp.
      Wen-Kai Wang, WIN Semiconductors Corp.
      Walter Wohlmuth, Vanguard International Semiconductor Corporation, Taiwan
      Download Paper

  • Wangz, Wen-Kai

    Macquarie University, Sydney Design Centre, Macom Tech. Solutions, WIN Semiconductors

    • Process control in GaAs manufacturing using Chua’s circuit

      Evgeny Kuxa, Macquarie University, Sydney Design Centre, Macom Tech. Solutions, WIN Semiconductors
      Anthony E. Parker, Macquarie University, Sydney Design Centre, Macom Tech. Solutions, WIN Semiconductors
      Simon J. Mahony, Macquarie University, Sydney Design Centre, Macom Tech. Solutions, WIN Semiconductors
      Anna Dadelloy, Macquarie University, Sydney Design Centre, Macom Tech. Solutions, WIN Semiconductors
      Wen-Kai Wangz, Macquarie University, Sydney Design Centre, Macom Tech. Solutions, WIN Semiconductors
      Michael C. Heimlich, Macquarie University, Sydney Design Centre, Macom Tech. Solutions, WIN Semiconductors
      Download Paper

  • Weaver, Daniel

    • An E-beam Evaporation Deposition Process for Tantalum Nitride Thin Film Resistors

      Lam Luu-Henderson, Skyworks Solutions Inc.
      Shiban Tiku, Skyworks Solutions, Inc.
      Hong Shen
      Richard Bingle
      Daniel Weaver
      Gary Hu
      Cristian Cismaru, Skyworks Solutions, Inc.
      Mike Sun, Skyworks Solutions, Inc.
      Skyworks Solutions
      formerly of Skyworks Solutions
      Download Paper

  • Wei, Houng-Chi

    Wavetek Microelectronics Corp.

  • Wei, Weber

    , Wavetek Microelectronics Corporation, United Microelectronics Corporation

    • Wavetek’s GaAs Manufacturing in 6” CMOS Fab

      Weber Wei, , Wavetek Microelectronics Corporation, United Microelectronics Corporation
      Jeff Lin, , Wavetek Microelectronics Corporation, United Microelectronics Corporation
      MT Wu, , Wavetek Microelectronics Corporation, United Microelectronics Corporation
      Jackie Huang, , Wavetek Microelectronics Corporation, United Microelectronics Corporation
      Sam Chou, Wavetek Microelectronics Corp.
      Amos Yen, , Wavetek Microelectronics Corporation, United Microelectronics Corporation
      CG Shih, , Wavetek Microelectronics Corporation, United Microelectronics Corporation
      Vance Su, , Wavetek Microelectronics Corporation, United Microelectronics Corporation
      Download Paper

  • Wei, Yi-Feng

    I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.

    • Method for Forming Through Wafer Vias in GaN on SiC Devices and Circuits

      Chia-Hao Chen, WIN Semiconductors Corp
      Yu-Wei Chang, WIN Semiconductors Corp
      Ming-Hung Weng, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.
      Ricky Chang, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.
      Shih-Hui Huang, WIN Semiconductors Corp
      Fraser Wang, WIN Semiconductors Corp
      Yi-Feng Wei, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.
      Stanley Hsieh, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.
      Download Paper

  • Weixelbaum, L.

    Ferdinand-Braun-Institute

    • Yield improvement of metal-insulator-metal capacitors in MMIC fabrication process based on AlGaN/GaN HFETs

      S. A. Chevtchenko, Ferdinand-Braun-Institut
      S. Freyer, Ferdinand-Braun-Institute
      L. Weixelbaum, Ferdinand-Braun-Institute
      P. Kurpas, Ferdinand-Braun-Institut
      Download Paper

  • Weng, Ming-Hung

    I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.

    • Yield Enhancement of 0.25 μm GaN HEMT Foundry Technology

      Wei-Chou Wang, WIN Semiconductors Corp
      Jhih-Han Du, WIN Semiconductors Corp
      Che-Kai Lin, WIN Semiconductors Corp
      Ming-Hung Weng, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.
      Cheng-Wen Peng, WIN Semiconductors Corp.
      Wen-Kai Wang, WIN Semiconductors Corp.
      Walter Wohlmuth, Vanguard International Semiconductor Corporation, Taiwan
      Download Paper

    • Method for Forming Through Wafer Vias in GaN on SiC Devices and Circuits

      Chia-Hao Chen, WIN Semiconductors Corp
      Yu-Wei Chang, WIN Semiconductors Corp
      Ming-Hung Weng, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.
      Ricky Chang, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.
      Shih-Hui Huang, WIN Semiconductors Corp
      Fraser Wang, WIN Semiconductors Corp
      Yi-Feng Wei, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.
      Stanley Hsieh, I-Te Cho, Walter Wohlmuth WIN Semiconductors Corp.
      Download Paper

  • Williams, Dennis

    WIN Semiconductors Corp

    • High Efficiency and High Ruggedness InGaP/GaAs HBT EPI Design

      Rei-Bin Chiou, WIN Semiconductors Corp.
      Ta-Chuan Kuo, WIN Semiconductors Corp.
      Cheng-Kuo Lin, WIN Semiconductors Corp
      Shu-Hsiao Tsai, WIN Semiconductors Corp
      Shin-Yi Ho, National Taiwan University
      Tung-Yao Chou, WIN Semiconductors Corp.
      Dennis Williams, WIN Semiconductors Corp
      Download Paper

  • Witte, Hartmut

    Institut for Experimentelle Physik

    • Homogeneity control of powerelectronic device structures by advanced in-situ metrology

      Oliver Schulz, Institut for Experimentelle Physik
      Armin Dadgar, Institut for Experimentelle Physik
      Jonas Hennig, Institut for Experimentelle Physik
      Oliver Krumm, Institut for Experimentelle Physik
      Stephanie Fritze, Institut for Experimentelle Physik
      Jürgen Bläsing, Institut for Experimentelle Physik
      Hartmut Witte, Institut for Experimentelle Physik
      Annette Diez, Institut for Experimentelle Physik
      Alois Krost, Institut for Experimentelle Physik
      LayTec AG, Institut for Experimentelle Physik
      Download Paper

  • Wohlmuth, Walter

    Vanguard International Semiconductor Corporation, Taiwan

  • Wu, MT

    , Wavetek Microelectronics Corporation, United Microelectronics Corporation

    • Wavetek’s GaAs Manufacturing in 6” CMOS Fab

      Weber Wei, , Wavetek Microelectronics Corporation, United Microelectronics Corporation
      Jeff Lin, , Wavetek Microelectronics Corporation, United Microelectronics Corporation
      MT Wu, , Wavetek Microelectronics Corporation, United Microelectronics Corporation
      Jackie Huang, , Wavetek Microelectronics Corporation, United Microelectronics Corporation
      Sam Chou, Wavetek Microelectronics Corp.
      Amos Yen, , Wavetek Microelectronics Corporation, United Microelectronics Corporation
      CG Shih, , Wavetek Microelectronics Corporation, United Microelectronics Corporation
      Vance Su, , Wavetek Microelectronics Corporation, United Microelectronics Corporation
      Download Paper

  • Xia, L.

    MACOM Technology Solutions, Lincoln Laboratory

    • Effect of Multi-Field Plates on GaN-on-Silicon HEMTs Reverse Breakdown and Leakage Characteristics

      T. Boles, MACOM Technology Solutions, Lincoln Laboratory
      D. Carlson, MACOM Technology Solutions, Lincoln Laboratory
      L. Xia, MACOM Technology Solutions, Lincoln Laboratory
      A. Kaleta, MACOM Technology Solutions, Lincoln Laboratory
      C. McLean, MACOM Technology Solutions, Lincoln Laboratory
      D. Jin, MACOM Technology Solutions, Lincoln Laboratory
      T. Palacios, MACOM Technology Solutions, Lincoln Laboratory
      G. W. Turner, MACOM Technology Solutions, Lincoln Laboratory
      R. J. Molnar, MACOM Technology Solutions, Lincoln Laboratory
      Download Paper

  • Xia, Ling

    MACOM Technology Solutions

    • Reverse Leakage Current and Breakdown Voltage Improvements in GaN HEMTs and GaN Schottky Diodes

      Timothy Boles, MACOM Technology Solutions
      Ling Xia, MACOM Technology Solutions
      Allen Hanson, MACOM Technology Solutions Inc.
      Anthony Kaleta, MACOM Technology Solutions
      Download Paper

  • Xu, Huiming

    University of Illinois at Urbana-Champaign

    • Surface Recombination and Performance Issues of Scaling Submicron Emitter on Type-II GaAsSb

      Huiming Xu, University of Illinois at Urbana-Champaign
      Eric Iverson, University of Illinois at Urbana-Champaign
      Download Paper

  • Xu, Peiqiang

    Hong Kong University of Science and Technology

    • High Performance Self-aligned AlN-GaN MISHEMT with In-situSiNxGate Dielectric and Regrown Source-Drain

      Xing Lu, Hong Kong University of Science and Technology
      Jun Ma, Hong Kong University of Science and Technology
      Peiqiang Xu, Hong Kong University of Science and Technology
      Download Paper

  • xxxx,

    xxxx

    • Selective Deposition of Low Temperature AlN Ohmic Contacts for GaN Devices

      xxxx, xxxx
      Download Paper

  • Y. Osipov, K.

    Ferdinand-Braun-Institut

  • Yamamoto, H.

    Sumitomo Electric Device Innovations, Inc.

    • A Robust Design of MMIC using Taguchi Method     

      A. Oya, Sumitomo Electric Device Innovations, Inc.
      A. Maekawa, Sumitomo Electric Device Innovations, Inc.
      H. Yamamoto, Sumitomo Electric Device Innovations, Inc.
      T. Yamamoto, Momentive Technologies
      T. Sato, Sumitomo Electric Device Innovations, Inc.
      Download Paper

  • Yamamoto, T.

    Momentive Technologies

    • A Robust Design of MMIC using Taguchi Method     

      A. Oya, Sumitomo Electric Device Innovations, Inc.
      A. Maekawa, Sumitomo Electric Device Innovations, Inc.
      H. Yamamoto, Sumitomo Electric Device Innovations, Inc.
      T. Yamamoto, Momentive Technologies
      T. Sato, Sumitomo Electric Device Innovations, Inc.
      Download Paper

  • Yamamura, T.

    Furukawa DenshiI Co.,Ltd.

    • The Longer life wafer tray for MOCVD -AlN ceramics (FAN090) by solid phase sintering

      N. Furukoshi, Furukawa DenshiI Co.,Ltd.
      K. Mutoh, Furukawa DenshiI Co.,Ltd.
      Y. Fukunaga, Furukawa DenshiI Co.,Ltd.
      T. Yamamura, Furukawa DenshiI Co.,Ltd.
      T. Iwata, Furukawa DenshiI Co.,Ltd.
      Download Paper

  • Yanagita, M.

    Sony Corporation

    • High Performance GaAs RF Switch with a P-Type Capping Layer

      K. Takeuchi, Sony Corporation
      S. Taniguchi, Sony Corporation
      M. Yanagita, Sony Corporation
      Y. Sasaki, Sony Corporation
      M. Nakamura, Sony Corporation
      Download Paper

  • Yang, Jinhong

    Qorvo

  • Yang, X.

    MEC, BAE Systems, IQE

    • The First 0.2um 6-Inch GaN-on-SiC MMIC Process

      R. Isaak, MEC, BAE Systems, IQE
      J. Diaz, MEC, BAE Systems, IQE
      M. Gerlach, MEC, BAE Systems, IQE
      J. Hulse, MEC, BAE Systems, IQE
      L. Schlesinger, MEC, BAE Systems, IQE
      P. Seekell, MEC, BAE Systems, IQE
      W. Zhu, MEC, BAE Systems, IQE
      W. Kopp, MEC, BAE Systems, IQE
      X. Yang, MEC, BAE Systems, IQE
      A. Stewart, MEC, BAE Systems, IQE
      K. Chu, MEC, BAE Systems, IQE
      P. C. Chao, MEC, BAE Systems, IQE
      X. Gao, MEC, BAE Systems, IQE
      M. Pan, MEC, BAE Systems, IQE
      D. Gorka, MEC, BAE Systems, IQE
      Download Paper

  • Yang, Yuefei

    Global Communication Semiconductors, LLC

    • An InGaP/GaAs DHBT with an Integrated Wide-Tuning-Range Varactor for Broad Band Monolithic VCO Applications

      Yuefei Yang, Global Communication Semiconductors, LLC
      Dave Wang, Global Communication Semiconductors, LLC
      Wing Yau, Global Communication Semiconductors, LLC
      Bryan Lee, Global Communication Semiconductors, LLC
      Dave Rasbot, Global Communication Semiconductors, LLC
      Hau Tan, Global Communication Semiconductors, LLC
      Download Paper

  • Yau, Wing

    Global Communication Semiconductors, LLC

    • An InGaP/GaAs DHBT with an Integrated Wide-Tuning-Range Varactor for Broad Band Monolithic VCO Applications

      Yuefei Yang, Global Communication Semiconductors, LLC
      Dave Wang, Global Communication Semiconductors, LLC
      Wing Yau, Global Communication Semiconductors, LLC
      Bryan Lee, Global Communication Semiconductors, LLC
      Dave Rasbot, Global Communication Semiconductors, LLC
      Hau Tan, Global Communication Semiconductors, LLC
      Download Paper

  • Yen, Amos

    , Wavetek Microelectronics Corporation, United Microelectronics Corporation

    • Wavetek’s GaAs Manufacturing in 6” CMOS Fab

      Weber Wei, , Wavetek Microelectronics Corporation, United Microelectronics Corporation
      Jeff Lin, , Wavetek Microelectronics Corporation, United Microelectronics Corporation
      MT Wu, , Wavetek Microelectronics Corporation, United Microelectronics Corporation
      Jackie Huang, , Wavetek Microelectronics Corporation, United Microelectronics Corporation
      Sam Chou, Wavetek Microelectronics Corp.
      Amos Yen, , Wavetek Microelectronics Corporation, United Microelectronics Corporation
      CG Shih, , Wavetek Microelectronics Corporation, United Microelectronics Corporation
      Vance Su, , Wavetek Microelectronics Corporation, United Microelectronics Corporation
      Download Paper

  • Yoshimura, M.

    Osaka University

    • Growth of bulk GaN Crystal by Na Flux Method

      Y. Mori, Osaka University
      M. Imade, Osaka University
      M. Maruyama, Osaka University
      M. Yoshimura, Osaka University
      Download Paper

  • Yota, Jiro

    • ALD HfO2, Al2O3, and PECVD Si3N4 as MIM Capacitor Dielectric for GaAs HBT Technology

      Jiro Yota
      Kai Kwok
      Skyworks Solutions
      Download Paper

  • Yue, Duofeng

    Qorvo, Inc.

  • Zettler, J.-T.

    LayTec AG

  • Zhu, W.

    MEC, BAE Systems, IQE

    • The First 0.2um 6-Inch GaN-on-SiC MMIC Process

      R. Isaak, MEC, BAE Systems, IQE
      J. Diaz, MEC, BAE Systems, IQE
      M. Gerlach, MEC, BAE Systems, IQE
      J. Hulse, MEC, BAE Systems, IQE
      L. Schlesinger, MEC, BAE Systems, IQE
      P. Seekell, MEC, BAE Systems, IQE
      W. Zhu, MEC, BAE Systems, IQE
      W. Kopp, MEC, BAE Systems, IQE
      X. Yang, MEC, BAE Systems, IQE
      A. Stewart, MEC, BAE Systems, IQE
      K. Chu, MEC, BAE Systems, IQE
      P. C. Chao, MEC, BAE Systems, IQE
      X. Gao, MEC, BAE Systems, IQE
      M. Pan, MEC, BAE Systems, IQE
      D. Gorka, MEC, BAE Systems, IQE
      Download Paper

  • Zorn, M.

    JENOPTIK Diode Lab GmbH