A. Thies

1Ferdinand-Braun-Institut (FBH)
  • Formation of slanted gates for GaN-based HEMTs by combined plasma and wet chemical etching of silicon nitride

    A. Thies, 1Ferdinand-Braun-Institut (FBH)
    N. Kemf, Ferdinand-Braun-Institut
    S. A. Chevtchenko, Ferdinand-Braun-Institut
    Download Paper
  • 9.3.2023 Drift Region Epitaxy Development and Characterization for High Blocking Strength and Low Specific Resistance in Vertical GaN Based Devices

    Eldad Bahat Treidel, Ferdinand-Braun-Institut, Berlin, Germany
    Frank Brunner, Ferdinand-Braun-Institut, Berlin, Germany
    Enrico Brusaterra, Ferdinand-Braun-Institut
    Mihaela Wolf, Ferdinand-Braun-Institut, Berlin, Germany
    Andreas Thies, Ferdinand-Braun-Institut
    J. Würfl, Ferdinand-Braun-Institut
    Oliver Hilt, Ferdinand-Braun-Institut (FBH)

    9.3.2023_Treidel