A. Thies
1Ferdinand-Braun-Institut (FBH)
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Formation of slanted gates for GaN-based HEMTs by combined plasma and wet chemical etching of silicon nitride
A. Thies, 1Ferdinand-Braun-Institut (FBH)N. Kemf, Ferdinand-Braun-InstitutS. A. Chevtchenko, Ferdinand-Braun-Institut -
9.3.2023 Drift Region Epitaxy Development and Characterization for High Blocking Strength and Low Specific Resistance in Vertical GaN Based Devices
Eldad Bahat Treidel, Ferdinand-Braun-Institut, Berlin, GermanyFrank Brunner, Ferdinand-Braun-Institut, Berlin, GermanyEnrico Brusaterra, Ferdinand-Braun-InstitutMihaela Wolf, Ferdinand-Braun-Institut, Berlin, GermanyAndreas Thies, Ferdinand-Braun-InstitutJ. Würfl, Ferdinand-Braun-InstitutOliver Hilt, Ferdinand-Braun-Institut, Berlin, Germany