Loading...
-
April 30, 2019 // 4:40pm – 5:00pm
5.4 Addressing 0.25 um T-Gate Lithography Defects through Data Driven Fit Model Analysis
-
May 10, 2022 // 4:50pm
4.3 Transfer of the AFRL 0.14 μm AlGaN/GaN-on-SiC MMIC Process to MACOM’s Commercial Fab
Download Paper
Loading...
-
May 11, 2022 // 2:40pm
10.3 Optimization of GaN RF Switch Device Performance using AFRL GaN140 MMIC Process
Download Paper
Loading...
-
12.2.2023 High Temperature Studies of 140 nm T-gate AlGaN/GaN HEMT Devices
-
4A.2 – Temperature Effects on DC and RF Characteristics of 140 nm AlGaN/GaN HEMTs with Regrown Contacts
Abstract
We conducted DC and small-signal RF characterization on AlGaN/GaN high-electron-mobility transistors (HEMTs) over a range of temperatures to examine temperature-dependent variations in key device performance metrics including transconductance (gm), extrinsic cutoff frequency (fT), maximum gain frequency (fmax), unilateral power gain (UPG), and maximum stable gain (MSG). Our findings indicate that device parameters decline with increasing temperature at a distinct rate. Specifically, a 100°C rise results in fT and fmax dropping by about 8 GHz and 17 GHz, respectively, while MSG decreases by approximately 1 dB. These changes are inherent to the device physics and are not influenced by its geometry or operational mode.
Reload document 
Open in new tab