H. Hahn

AIXTRON SE, Herzogenrath, Germany
  • May 10, 2022 // 2:40pm

    2.3 Advanced MOCVD Technology for RF-HEMT Growth on SEMI-Standard Large-Area (111) Silicon Substrates

    C. Mauder, AIXTRON SE, Herzogenrath, Germany
    H. Hahn, AIXTRON SE, Herzogenrath, Germany
    Z. Gao, AIXTRON SE, Herzogenrath, Germany
    M. Marx, AIXTRON SE, Herzogenrath, Germany
    T. Zweipfennig, RWTH Aachen University, Germany
    J. Ehrler, RWTH Aachen University, Germany
    H. Kalisch, RWTH Aachen University, Germany
    J. Bolton, AMO GmbH, Aachen Germany
    M. Lemme, AMO GmbH, Aachen Germany
    A. Alian, imec vzw, Leuven, Belgium
    B. Parvais, imec vzw, Leuven, Belgium
    M. Zhao, imec vzw, Leuven, Belgium
    Michael Heuken, AIXTRON SE
    A. Vescan, RWTH Aachen University, Germany
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  • March 10, 2022 // 8:45am

    13.2 Propelling the Power Electronics Revolution: 200 mm Diameter, 100 V to 1800 V and Beyond GaN-on-QST® High Volume Device Manufacturing Platform

    Cem Basceri, QROMIS, USA
    Vlad Odnoblyudov, QROMIS, USA
    O. Aktas, Sandia National Labs, Albuquerque, NM
    Walter Wohlmuth, Vanguard International Semiconductor Corporation, Taiwan
    Karen Geens, imec, Leuven, Belgium
    Benoit Bakeroot, imec, Leuven, Belgium and CMST, imec & Ghent University, Ghent, Belgium
    H. Hahn, AIXTRON SE, Herzogenrath, Germany
    D. Fahle, AIXTRON SE Germany
    Stefaan Decoutere, Imec, Leuven, Belgium
    A. Vohra, imec, Leuven, Belgium
    M. Heuken, AIXTRON SE Germany

    Invited Presentation

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  • 7.5.2023 Improving the yield for GaN-on-Si HEMT devices for power applications

    D. Fahle, AIXTRON SE Germany
    C. Mauder, AIXTRON SE, Herzogenrath, Germany
    H. Hahn, AIXTRON SE
    Z. Gao, AIXTRON SE, Herzogenrath, Germany
    Niels Posthuma, Imec
    Stefaan Decoutere, Imec, Leuven, Belgium

    7.5.2023_Improving the yield for GaN-on-Si HEMT devices for power applications_extended_v2