In this study, AlGaN back barriers (B.B.) with different Al mole fractions and thicknesses were used in AlGaN/GaN high electron mobility transistors (HEMTs) to improve device performance. Relative to thickness, a proper Al mole fraction (Al0.08GaN) of the B.B. more strongly affected the device’ Ion/Ioff ratio. It exhibited a low leakage current and high Ion/Ioff ratio of approximately 106. Relative to B.B. mole fraction, B.B. thickness more greatly affected the devices’ horizontal breakdown voltage (760V) and LFN characteristics. Increasing the Al mole fraction and the thickness of the B.B. more strongly affected the dynamic RON. The current gain cut-off frequency (fT) and maximum stable gain cut-off frequency (fmax) were 5.2 GHz and 10.5 GHz, respectively, for the Al0.08GaN B.B. device.
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The Impact of AlxGa1-xN Back Barrier in AlGaN/GaN High Electron Mobility Transistors (HEMTs) on 6-inch MCZ Si Substrate
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8.4.2021 Low Off-State Leakage Current Normally Off p-GaN Gate HEMT Using the Al0.5Ga0.5N Etching Stop Layer Design
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High Gate Voltage Swing Region of Normally-off p-GaN MIS-HEMT With ALD-Growth Al2O3/AlN Gate Insulator Layer
Download PaperMetal–insulator–semiconductor p-type GaN high-electron-mobility transistor with an Al2O3/AlN deposited by atomic layer deposition was investigated. The selected insulator, AlN has been proven to have a good interface with GaN. A traditional p-GaN device without an Al2O3/AlN layer was processed for comparison. Due to the Al2O3/AlN layer, the gate leakage was lower, and the threshold voltage was higher, at 4.7 V. Additionally, excellent turn-on voltage was obtained. Furthermore, low current degradation and smaller VTH shift at high temperatures was also observed. Hence, growing a good-quality Al2O3/AlN layer can achieve an enhancement-mode operation with superior stability and high gate swing region.
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May 10, 2022 // 3:20pm
18.16 Hole Injection Effect and Dynamic Characteristics Analysis of Normally-Off p-GaN HEMT with AlGaN Cap layer on Low Resistivity SiC substrate
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6.2 High Performance Normally-Off Operation p-GaN Gate HEMT with Composited Barriers Structure Design
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14.8 High Voltage Vertical GaN p–n Diode With N2O Sidewall Treatment on Free-standing GaN Wafer
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12.3 The Demonstration and Characterization of In-situ SiNx/AlGaN/GaN HEMT on 6-inch Silicon on Insulator (SOI) Substrate
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The Improvement of Mg Out-diffusion in Normally-off p-GaN Gate HEMT Using Pulsed Laser Activation Technique
Download PaperA low- Magnesium (Mg) out-diffusion normally off p-GaN gated AlGaN/GaN high-electron-mobility transistor (HEMT) was developed using a low-temperature laser activation technique. Conventionally, during the actual p-GaN layer activation procedure, Mg out-diffuses into the AlGaN barrier and GaN channel at high temperatures. In addition, the Al of the AlGaN barrier layer is injected into GaN to generate alloy scattering and to suppress current density. In this study, the GaN doped Mg layer (Mg:GaN)was activated using short-wavelength Nd:YAG pulse laser annealing, and a conventional thermal activation device was processed for comparison. The results demonstrated that the laser activation technique in p-GaN HEMT suppressed the Mg out-diffusion-induced leakage current and trapping effect and enhanced the current density and breakdown voltage. Therefore, using this novel technique, a high and active Mg concentration and a favorable doping confinement can be obtained in the p-GaN layer to realize a stable enhancement-mode operation.
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5.4.2021 Improved Gate Reliability Normally-Off p-GaN/AlN/AlGaN/GaN HEMT with AlGaN Cap-Layer
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May 12, 2022 // 3:20pm
18.15 Bilayer N-metal Lift-off Process on Thick DBRs Mesa for Low-Threshold VCSELs
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May 12, 2022 // 3:20pm
18.17 Improved RF Characteristics of AlGaN/AlN/GaN HEMT by using 3C-SiC/Si Hybrid bond Substrate
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18.10.2023 RF and Power Characteristics of AlGaN/AlN/GaN HEMTs on Mn-Doped Freestanding GaN substrate
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