Hsien-Chin Chiu

Chang Gung University
  • 6.2 High Performance Normally-Off Operation p-GaN Gate HEMT with Composited Barriers Structure Design

    Yi-Sheng Chang, Chang Gung University
    Bo-Hong Li, Chang Gung University
    Hsiang-Chun Wang, Chang Gung University
    Hsien-Chin Chiu, Chang Gung University
    Rong Xuan, Technology Development Division, Episil-Precision Inc, Taiwan
    Chih-Wei Hu, Technology Development Division, Episil-Precision Inc, Taiwan
    Jung-Ruey Tsai, Department of Photonics and Communication Engineering, Asia University, Taiwan
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  • 14.8 High Voltage Vertical GaN p–n Diode With N2O Sidewall Treatment on Free-standing GaN Wafer

    Hsien-Chin Chiu, Chang Gung University
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    Hsuan-Ling Kao
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  • The Improvement of Mg Out-diffusion in Normally-off p-GaN Gate HEMT Using Pulsed Laser Activation Technique

    Chong Rong Huang, Chang Gung University
    Hsien-Chin Chiu, Chang Gung University
    Chia-Hao Liu, Chang Gung University
    Hsiang-Chun Wang, Chang Gung University
    Chao-Wei Chiu, Chang Gung University

    A low- Magnesium (Mg) out-diffusion normally off p-GaN gated AlGaN/GaN high-electron-mobility transistor (HEMT) was developed using a low-temperature laser activation technique. Conventionally, during the actual p-GaN layer activation procedure, Mg out-diffuses into the AlGaN barrier and GaN channel at high temperatures. In addition, the Al of the AlGaN barrier layer is injected into GaN to generate alloy scattering and to suppress current density. In this study, the GaN doped Mg layer (Mg:GaN)was activated using short-wavelength Nd:YAG pulse laser annealing, and a conventional thermal activation device was processed for comparison. The results demonstrated that the laser activation technique in p-GaN HEMT suppressed the Mg out-diffusion-induced leakage current and trapping effect and enhanced the current density and breakdown voltage. Therefore, using this novel technique, a high and active Mg concentration and a favorable doping confinement can be obtained in the p-GaN layer to realize a stable enhancement-mode operation.

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  • 12.3 The Demonstration and Characterization of In-situ SiNx/AlGaN/GaN HEMT on 6-inch Silicon on Insulator (SOI) Substrate

    Hsien-Chin Chiu, Chang Gung University
    Hao-Yu Wang, Institute of Semiconductors, Chinese Academy of Sciences; University of Chinese Academy of Sciences
    Li-Yi Peng, Chang Gung University
    Hsiang-Chun Wang, Chang Gung University
    Yuan-Hsiang Cheng
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  • 12.4 Investigation of InAlN/GaN Schottky Barrier Diode (SBD) on 6-inch SOI substrate

    Hsien-Chin Chiu, Chang Gung University
    Li-Yi Peng, Chang Gung University
    Hsiang-Chun Wang, Chang Gung University
    Hou-Yu Wang, Chang Gung University
    Jen-Inn Chyi, National Central University
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