J. A. Turcaud

Coherent Corp.
  • May 12, 2022 // 11:50am

    15.4 Ion Implantation Simulation and Optimization in Semiconductor Compounds

    J. A. Turcaud, Coherent Corp.
    J. Schuur, Coherent Corp.
    R. Pong, COHERENT - INNOViON
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  • 5.1.2023 Isolation in Compound Semiconductors and the Risk of Neutron Generation with Implantation of Light Ions

    J. A. Turcaud, Coherent Corp.
    C. Heckman, COHERENT - INNOViON
    V. Heckman, COHERENT - INNOViON
    A. Hassan, COHERENT - INNOViON
    R. Pong, COHERENT - INNOViON
    J. Schuur, Coherent Corp.

    5.1.2023_Turcaud_Neutron_TALK_CS_Mantech_2023_v3

  • 18.5.2023 Lateral Range and Diffusion Simulation Capabilities for Ion Implantation in Compound Semiconductors

    J. A. Turcaud, Coherent Corp.

    18.05.2023 JTurcaud_Simulation_POSTER Final

  • 4.1.3.2024 Influence of Carbon Capping Materials during High Temperature Annealing on Surface, Defects and Dopant Profile in SiC

    J. A. Turcaud, Coherent Corp.
    D. Lee, Coherent Corp.
    D. Rossman, Coherent Corp.
    J. Schuur, Coherent Corp.
    R. Chebi, Coherent Corp.
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