James Gallagher

U.S. Naval Research Laboratory
  • Exploring the capability of Hyperspectral Electroluminescence for process monitoring in vertical GaN devices

    Karl D. Hobart, U.S. Naval Research Laboratory
    Mona Ebrish, Vanderbilt University, Nashville, TN
    Travis J. Anderson, U.S. Naval Research Laboratory
    James Gallagher, U.S. Naval Research Laboratory
    Joseph Spencer, U.S. Naval Research Laboratory, Washington, DC, USA, Virginia Tech
    Jennifer Hite, U.S. Naval Research Laboratory
    Michael Mastro, U.S. Naval Research Laboratory

    GaN is a promising material for more efficient high frequency and high voltage power switching. However, GaN still is not the common material for power electronics due to immature substrate, homoepitaxial growth, and processing technology. Electroluminescence is a promising method to predict failure points due to high field stress, which can assist in the separation of inherent defects stemming from substrate quality, and from process-induced defects as well as identify problems related to proper edge termination design. In this work, we compare the Electroluminescence signatures of devices on inhomogeneous substrates to DC I-V behavior to demonstrate the utility of the technique for process monitoring.

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  • 9.4.2023 Scalable Manufacturing of Planar, Large-Area 1.2kV and 3.3kV Vertical GaN PiN Diodes

    Alan Jacobs, U.S. Naval Research Laboratory, Washington DC
    Mona Ebrish, NRC Postdoc Fellow Residing at the U.S. Naval Research Laboratory
    James Gallagher, U.S. Naval Research Laboratory
    Marko J. Tadjer, U.S. Naval Research Laboratory
    James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
    Jennifer K. Hite, Naval Research Laboratory
    N. Mahadik, U.S. Naval Research Laboratory
    Robert Kaplar, Sandia National Labs, Albuquerque, NM
    O. Aktas, Sandia National Labs, Albuquerque, NM

    9.4.2023_Anderson

  • 10.5.2023 Accuracy of Machine Learning Models on Predicting the Properties of Vertical GaN Diodes

    James Gallagher, U.S. Naval Research Laboratory
    Michael A. Mastro, U.S. Naval Research Laboratory
    Mona Ebrish, Vanderbilt University, Nashville, TN
    Alan Jacobs, U.S. Naval Research Laboratory, Washington DC
    Brendan. P. Gunning, Sandia National Labs, Albuquerque, NM
    Robert Kaplar, Sandia National Labs, Albuquerque, NM

    10.5.2023_Gallagher

  • 11.3.2023 Structural and Electrical Characterization of Schottky Barrier Diodes on 100 mm HVPE β-Ga2O3 Epiwafer Technology

    Marko J. Tadjer, U.S. Naval Research Laboratory
    James Gallagher, ASEE Postdoctoral Fellow Residing at NRL
    N. Mahadik, U.S. Naval Research Laboratory
    Hannah N. Masten, National Research Council Postdoctoral Fellow, Residing at NRL
    James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
    Akito Kuramata, Novel Crystal Technology, Inc

    11.3.2023_CS_MANTECH-2023_extended-abstract_Tadjer final