James Spencer Lundh
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8.3.2023 Heterogeneous Integration of Gallium Nitride HEMTs with Single Crystal Diamond Substrates via Micro-transfer Printing for Thermal Management
James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRLAndy Xie, QorvoShawn Mack, U.S. Naval Research LaboratoryD. Scott Katzer, U.S. Naval Research LaboratoryMarko J. Tadjer, U.S. Naval Research LaboratoryTravis J. Anderson, U.S. Naval Research LaboratoryBrian Downey, US Naval Research LaboratoryDavid J Meyer, U.S. Naval Research Laboratory, Washington, DC -
9.4.2023 Scalable Manufacturing of Planar, Large-Area 1.2kV and 3.3kV Vertical GaN PiN Diodes
Alan Jacobs, U.S. Naval Research LaboratoryMona Ebrish, NRC Postdoc Fellow Residing at the U.S. Naval Research LaboratoryJames Gallagher, U.S. Naval Research LaboratoryMarko J. Tadjer, U.S. Naval Research LaboratoryJames Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRLJennifer K. Hite, Naval Research LaboratoryN. Mahadik, U.S. Naval Research LaboratoryRobert Kaplar, Sandia National Labs, Albuquerque, NMO. Aktas, Sandia National Labs, Albuquerque, NM -
11.3.2023 Structural and Electrical Characterization of Schottky Barrier Diodes on 100 mm HVPE β-Ga2O3 Epiwafer Technology
Marko J. Tadjer, U.S. Naval Research LaboratoryJames Gallagher, ASEE Postdoctoral Fellow Residing at NRLN. Mahadik, U.S. Naval Research LaboratoryHannah N. Masten, National Research Council Postdoctoral Fellow, Residing at NRLJames Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRLAkito Kuramata, Novel Crystal Technology, Inc -
2.1.3.2024 Experimentally Validated Innovative Edge Termination for Vertical GaN Diodes
Alan Jacobs, U.S. Naval Research LaboratoryJames Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRLDaniel G. Georgiev, University of Toledo, Toledo OHAndrew Koehler, U. S. Naval Research LaboratoryRaghav Khanna, University of Toledo, Toledo OHMarko J. Tadjer, U.S. Naval Research LaboratoryKarl D. Hobart, U.S. Naval Research LaboratoryTravis J. Anderson, U.S. Naval Research Laboratory -
8.1.3.2024 High Temperature Operation of GaN High Electron Mobility Transistors on Large-Area Engineered Substrates for Extreme Environments
James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRLAlan Jacobs, U.S. Naval Research LaboratoryMichael E. Liao, National Research Council Postdoctoral Fellow, Residing at NRLJoseph Spencer, U.S. Naval Research LaboratoryGeoffrey M. Foster, U.S. Naval Research LaboratoryAndrew Koehler, U. S. Naval Research LaboratoryVladimir Odnoblyudov, Qromis, Inc.Marko J. Tadjer, U.S. Naval Research LaboratoryKarl D. Hobart, U.S. Naval Research LaboratoryTravis J. Anderson, U.S. Naval Research Laboratory -
10.1.3.2024 3D Diamond Growth for GaN Cooling and TBR Reduction
Daniel Francis, Akash Systems, San Francisco, CA, USASai Charan Vanjari, University of BristolXiaoyang Ji, University of BristolTatyana Feygelson, U. S. Naval Research LaboratoryJoseph Spencer, U.S. Naval Research LaboratoryHannah N. Masten, National Research Council Postdoctoral Fellow, Residing at NRLAlan Jacobs, U.S. Naval Research LaboratoryJames Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRLMarko Tadjer, U.S. Naval Research LaboratoryTravis J. Anderson, U.S. Naval Research LaboratoryKarl D. Hobart, U.S. Naval Research LaboratoryBradford Pate, Naval Research LaboratoryJames Pomeroy, University of BristolMatthew Smith, University of BristolMartin Kuball, University of BristolLoading...
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3B.5 – Stability of 3.3 kV Planar GaN Diodes with Nitrogen Implanted Termination under High Temperature Reverse Bias Stressing
Alan Jacobs, U.S. Naval Research LaboratoryJames Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRLTravis J. Anderson, U.S. Naval Research LaboratoryGeoffrey M. Foster, U.S. Naval Research LaboratoryAndrew Koehler, U. S. Naval Research LaboratoryJ. C. Gallagher, U.S. Naval Research LaboratoryBrendan. P. Gunning, Sandia National Labs, Albuquerque, NMRobert Kaplar, Sandia National Labs, Albuquerque, NMKarl D. Hobart, U.S. Naval Research LaboratoryM.A. Mastro, U.S. Naval Research LaboratoryABSTRACT
Planar vertical gallium nitride devices are capable of utilizing the beneficial material properties inherent to bulk GaN without the interference of surface leakage pathways or passivation failures inherent to lateral devices, however, the stability and long-term viability of implanted termination necessitates study. Here we show stressing of 3.3kV vertical GaN diodes with nitrogen implanted termination at over 80% of the breakdown voltage and at up to 200°C for over 400 hours. Some diodes exhibit a burn-in effect with small changes to the breakdown voltage and leakage at breakdown while others exhibit robust and nearly invariant behavior to the limits of testing. Additionally, thermal stressing of a cohort of devices without bias shows an increased degradation of breakdown voltage above 300°C and differentiation of devices within the cohort beyond 350°C enabling further study of the degradation mechanisms.