James Spencer Lundh

National Research Council Postdoctoral Fellow, Residing at NRL

  • 8.3.2023 Heterogeneous Integration of Gallium Nitride HEMTs with Single Crystal Diamond Substrates via Micro-transfer Printing for Thermal Management

    James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
    Andy Xie, Qorvo
    Shawn Mack, U.S. Naval Research Laboratory
    D. Scott Katzer, U.S. Naval Research Laboratory
    Marko J. Tadjer, U.S. Naval Research Laboratory
    Travis J. Anderson, U.S. Naval Research Laboratory
    Brian Downey, US Naval Research Laboratory
    David J Meyer, U.S. Naval Research Laboratory, Washington, DC

    8.3.2023 Paper 2023 Lundh CS Mantech extended abstract v6

  • 9.4.2023 Scalable Manufacturing of Planar, Large-Area 1.2kV and 3.3kV Vertical GaN PiN Diodes

    Alan Jacobs, U.S. Naval Research Laboratory
    Mona Ebrish, NRC Postdoc Fellow Residing at the U.S. Naval Research Laboratory
    James Gallagher, U.S. Naval Research Laboratory
    Marko J. Tadjer, U.S. Naval Research Laboratory
    James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
    Jennifer K. Hite, Naval Research Laboratory
    N. Mahadik, U.S. Naval Research Laboratory
    Robert Kaplar, Sandia National Labs, Albuquerque, NM
    O. Aktas, Sandia National Labs, Albuquerque, NM

    9.4.2023_Anderson

  • 11.3.2023 Structural and Electrical Characterization of Schottky Barrier Diodes on 100 mm HVPE β-Ga2O3 Epiwafer Technology

    Marko J. Tadjer, U.S. Naval Research Laboratory
    James Gallagher, ASEE Postdoctoral Fellow Residing at NRL
    N. Mahadik, U.S. Naval Research Laboratory
    Hannah N. Masten, National Research Council Postdoctoral Fellow, Residing at NRL
    James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
    Akito Kuramata, Novel Crystal Technology, Inc

    11.3.2023_CS_MANTECH-2023_extended-abstract_Tadjer final

  • 2.1.3.2024 Experimentally Validated Innovative Edge Termination for Vertical GaN Diodes

    Alan Jacobs, U.S. Naval Research Laboratory
    James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
    Daniel G. Georgiev, University of Toledo, Toledo OH
    Andrew Koehler, U. S. Naval Research Laboratory
    Raghav Khanna, University of Toledo, Toledo OH
    Marko J. Tadjer, U.S. Naval Research Laboratory
    Karl D. Hobart, U.S. Naval Research Laboratory
    Travis J. Anderson, U.S. Naval Research Laboratory

    2.1.3.2024

  • 8.1.3.2024 High Temperature Operation of GaN High Electron Mobility Transistors on Large-Area Engineered Substrates for Extreme Environments

    James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
    Alan Jacobs, U.S. Naval Research Laboratory
    Michael E. Liao, National Research Council Postdoctoral Fellow, Residing at NRL
    Joseph Spencer, U.S. Naval Research Laboratory
    Geoffrey M. Foster, U.S. Naval Research Laboratory
    Andrew Koehler, U. S. Naval Research Laboratory
    Vladimir Odnoblyudov, Qromis, Inc.
    Marko J. Tadjer, U.S. Naval Research Laboratory
    Karl D. Hobart, U.S. Naval Research Laboratory
    Travis J. Anderson, U.S. Naval Research Laboratory

    8.1.3.2024 High Temperature Operation of GaN High Electron Mobility Transistors

  • 10.1.3.2024 3D Diamond Growth for GaN Cooling and TBR Reduction

    Daniel Francis, Akash Systems, San Francisco, CA, USA
    Sai Charan Vanjari, University of Bristol
    Xiaoyang Ji, University of Bristol
    Tatyana Feygelson, U. S. Naval Research Laboratory
    Joseph Spencer, U.S. Naval Research Laboratory
    Hannah N. Masten, National Research Council Postdoctoral Fellow, Residing at NRL
    Alan Jacobs, U.S. Naval Research Laboratory
    James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
    Marko Tadjer, U.S. Naval Research Laboratory
    Travis J. Anderson, U.S. Naval Research Laboratory
    Karl D. Hobart, U.S. Naval Research Laboratory
    Bradford Pate, Naval Research Laboratory
    James Pomeroy, University of Bristol
    Matthew Smith, University of Bristol
    Martin Kuball, University of Bristol
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  • 3B.5 – Stability of 3.3 kV Planar GaN Diodes with Nitrogen Implanted Termination under High Temperature Reverse Bias Stressing

    Alan Jacobs, U.S. Naval Research Laboratory
    James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
    Travis J. Anderson, U.S. Naval Research Laboratory
    Geoffrey M. Foster, U.S. Naval Research Laboratory
    Andrew Koehler, U. S. Naval Research Laboratory
    J. C. Gallagher, U.S. Naval Research Laboratory
    Brendan. P. Gunning, Sandia National Labs, Albuquerque, NM
    Robert Kaplar, Sandia National Labs, Albuquerque, NM
    Karl D. Hobart, U.S. Naval Research Laboratory
    M.A. Mastro, U.S. Naval Research Laboratory

    3B.5 Final.2025

    ABSTRACT
    Planar vertical gallium nitride devices are capable of utilizing the beneficial material properties inherent to bulk GaN without the interference of surface leakage pathways or passivation failures inherent to lateral devices, however, the stability and long-term viability of implanted termination necessitates study. Here we show  stressing of 3.3kV vertical GaN diodes with nitrogen implanted termination at over 80% of the breakdown voltage and at up to 200°C for over 400 hours. Some diodes exhibit a burn-in effect with small changes to the breakdown voltage and leakage at breakdown while others exhibit robust and nearly invariant behavior to the limits of testing. Additionally, thermal stressing of a cohort of devices without bias shows an increased degradation of breakdown voltage above 300°C and differentiation of devices within the cohort beyond 350°C enabling further study of the degradation mechanisms.