Jennifer Hite

U.S. Naval Research Laboratory
  • Predicting Vertical GaN Diode Quality using Long Range Optical tests on Substrates

    Francis Kub, U.S. Naval Research Laboratory
    James Gallagher, U.S. Naval Research Laboratory
    Andrew Koehler, Naval Research Laboratory
    Mona Ebrish, NRC Postdoc Fellow Residing at the U.S. Naval Research Laboratory
    Michael Mastro, U.S. Naval Research Laboratory
    Jennifer Hite, U.S. Naval Research Laboratory
    Karl Holbart, U.S. Naval Research Laboratory

    It is well known that vertical GaN devices could surpass current lateral GaN switch technology due to higher critical electric fields and higher breakdown voltages from its different geometry, and lower impurity concentration from the superior quality of homoepitaxial films. However, the inconsistency of GaN substrate properties, both within wafer and vendor-to-vendor, makes reliable device fabrication difficult. Here we implement long-range spectroscopic studies of GaN substrates and epitaxial wafers using Raman, photoluminescence, and optical profilometry to assess incoming material and correlate to electrical performance of vertical diodes. We have classified incoming wafers into two general types, and determined that inhomogeneities in the wafers can negatively affect the reverse leakage current of PiN diodes.

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  • 16.3 Evaluation of GaN Device Structures on 150 mm GaN on Engineered Substrates

    Karl D. Hobart, U.S. Naval Research Laboratory
    Andrew Koehler, Naval Research Laboratory
    Anindya Nath, George Mason University
    Jennifer Hite, U.S. Naval Research Laboratory
    N. Mahadik, U.S. Naval Research Laboratory
    Fritz Kub, Naval Research Laboratory
    Ozgur Aktas, QROMIS, USA
    Vladimir Odnoblyudov, QROMIS, USA
    Cem Basceri, QROMIS, USA
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  • 9.1 Improvements in the Annealing of Ion Implanted III-Nitride Materials and Related Devices

    Jordan Greenlee, NRC Postdoctoral Fellow Residing at the Naval Research Laboratory
    Boris Feigelson, Naval Research Laboratory
    Jennifer Hite, U.S. Naval Research Laboratory
    Karl D. Hobart, U.S. Naval Research Laboratory
    Francis Kub, U.S. Naval Research Laboratory
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  • 10b.4 Reliability Assessment of Thermally-Stable Gate Materials for AlGaN/GaN HEMTs

    David Shahin, University of Maryland
    Jordan Greenlee, NRC Postdoctoral Fellow Residing at the Naval Research Laboratory
    Andrew Koehler, Naval Research Laboratory
    Virginia Wheeler, U.S. Naval Research Laboratory
    Marko Tadjer, U.S. Naval Research Laboratory
    Tatyana Feygelson, Naval Research Laboratory
    Bradford Pate, Naval Research Laboratory
    Jennifer Hite, U.S. Naval Research Laboratory
    Karl D. Hobart, U.S. Naval Research Laboratory
    Charles Eddy, US Naval Research Laboratory
    Jr., Naval Research Laboratory
    Francis Kub, U.S. Naval Research Laboratory
    Aris Christou, University of Maryland-College Park
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  • 9.4.2023 Scalable Manufacturing of Planar, Large-Area 1.2kV and 3.3kV Vertical GaN PiN Diodes

    Alan Jacobs, U.S. Naval Research Laboratory, Washington DC
    Mona Ebrish, NRC Postdoc Fellow Residing at the U.S. Naval Research Laboratory
    James Gallagher, U.S. Naval Research Laboratory
    Marko J. Tadjer, U.S. Naval Research Laboratory
    James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
    Jennifer K. Hite, Naval Research Laboratory
    N. Mahadik, U.S. Naval Research Laboratory
    Robert Kaplar, Sandia National Labs, Albuquerque, NM
    O. Aktas, Sandia National Labs, Albuquerque, NM

    9.4.2023_Anderson

  • 11.4.2023 Nanocrystalline Diamond-Capped β-(AlxGa1-x)2O3/Ga2O3 Heterostructure FieldEffect Transistor

    Hannah N. Masten, National Research Council Postdoctoral Fellow, Residing at NRL
    James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
    Tatyana Feygelson, Naval Research Laboratory
    Joseph Spencer, U.S. Naval Research Laboratory, Washington, DC, USA, Virginia Tech
    Tatyana I. Feygelson, American Society for Engineering Education, United States Naval Research Lab. Universidad Politecnica de Madrid
    Jennifer K. Hite, Naval Research Laboratory
    Daniel Pennachio, U.S. Naval Research Laboratory, Washington DC
    Alan Jacobs, U.S. Naval Research Laboratory, Washington DC
    Boris Feygelson, U.S. Naval Research Laboratory
    Kohei Sasaki, Novel Crystal Technology
    Akito Kuramata, Novel Crystal Technology, Inc
    Pai-Ying Liao, Purdue University
    Peide Ye, Purdue University
    Bradford Pate, Naval Research Laboratory
    Travis J. Anderson, U.S. Naval Research Laboratory
    Marko J. Tadjer, U.S. Naval Research Laboratory

    11.4.2023_Masten- NCD HFET- 2023 CS Mantech – final paper_hnm

  • 15.5.2023 Scalable Selective Area Doping for Manufacturing of Planar Vertical Power GaN Devices

    Alan Jacobs, U.S. Naval Research Laboratory, Washington DC
    Boris N. Feigelson, Naval Research Laboratory
    Jennifer Hite, U.S. Naval Research Laboratory
    Joseph Spencer, U.S. Naval Research Laboratory, Washington, DC, USA, Virginia Tech
    Prakash Pandey, University of Toledo, Toledo OH
    Daniel G. Georgiev, University of Toledo, Toledo OH
    Raghav Khanna, University of Toledo, Toledo OH
    Marko J. Tadjer, U.S. Naval Research Laboratory
    Travis J. Anderson, U.S. Naval Research Laboratory

    15.5.2023 Alan Jacobs CS Mantech ExtAbstract_submission2