It is well known that vertical GaN devices could surpass current lateral GaN switch technology due to higher critical electric fields and higher breakdown voltages from its different geometry, and lower impurity concentration from the superior quality of homoepitaxial films. However, the inconsistency of GaN substrate properties, both within wafer and vendor-to-vendor, makes reliable device fabrication difficult. Here we implement long-range spectroscopic studies of GaN substrates and epitaxial wafers using Raman, photoluminescence, and optical profilometry to assess incoming material and correlate to electrical performance of vertical diodes. We have classified incoming wafers into two general types, and determined that inhomogeneities in the wafers can negatively affect the reverse leakage current of PiN diodes.
Jennifer Hite
U.S. Naval Research Laboratory
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Predicting Vertical GaN Diode Quality using Long Range Optical tests on Substrates
Francis Kub, U.S. Naval Research LaboratoryJames Gallagher, U.S. Naval Research LaboratoryAndrew Koehler, Naval Research LaboratoryMona Ebrish, NRC Postdoc Fellow Residing at the U.S. Naval Research LaboratoryMichael Mastro, U.S. Naval Research LaboratoryJennifer Hite, U.S. Naval Research LaboratoryKarl Holbart, U.S. Naval Research LaboratoryDownload Paper -
16.3 Evaluation of GaN Device Structures on 150 mm GaN on Engineered Substrates
Download PaperKarl D. Hobart, U.S. Naval Research LaboratoryAndrew Koehler, Naval Research LaboratoryAnindya Nath, George Mason UniversityJennifer Hite, U.S. Naval Research LaboratoryN. Mahadik, U.S. Naval Research LaboratoryFritz Kub, Naval Research LaboratoryOzgur Aktas, QROMIS, USAVladimir Odnoblyudov, QROMIS, USACem Basceri, QROMIS, USA -
9.1 Improvements in the Annealing of Ion Implanted III-Nitride Materials and Related Devices
Download PaperJordan Greenlee, NRC Postdoctoral Fellow Residing at the Naval Research LaboratoryBoris Feigelson, Naval Research LaboratoryJennifer Hite, U.S. Naval Research LaboratoryKarl D. Hobart, U.S. Naval Research LaboratoryFrancis Kub, U.S. Naval Research Laboratory -
10b.4 Reliability Assessment of Thermally-Stable Gate Materials for AlGaN/GaN HEMTs
Download PaperDavid Shahin, University of MarylandJordan Greenlee, NRC Postdoctoral Fellow Residing at the Naval Research LaboratoryAndrew Koehler, Naval Research LaboratoryVirginia Wheeler, U.S. Naval Research LaboratoryMarko Tadjer, U.S. Naval Research LaboratoryTatyana Feygelson, Naval Research LaboratoryBradford Pate, Naval Research LaboratoryJennifer Hite, U.S. Naval Research LaboratoryKarl D. Hobart, U.S. Naval Research LaboratoryCharles Eddy, US Naval Research LaboratoryJr., Naval Research LaboratoryFrancis Kub, U.S. Naval Research LaboratoryAris Christou, University of Maryland-College Park -
9.4.2023 Scalable Manufacturing of Planar, Large-Area 1.2kV and 3.3kV Vertical GaN PiN Diodes
Alan Jacobs, U.S. Naval Research Laboratory, Washington DCMona Ebrish, NRC Postdoc Fellow Residing at the U.S. Naval Research LaboratoryJames Gallagher, U.S. Naval Research LaboratoryMarko J. Tadjer, U.S. Naval Research LaboratoryJames Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRLJennifer K. Hite, Naval Research LaboratoryN. Mahadik, U.S. Naval Research LaboratoryRobert Kaplar, Sandia National Labs, Albuquerque, NMO. Aktas, Sandia National Labs, Albuquerque, NM -
11.4.2023 Nanocrystalline Diamond-Capped β-(AlxGa1-x)2O3/Ga2O3 Heterostructure FieldEffect Transistor
Hannah N. Masten, National Research Council Postdoctoral Fellow, Residing at NRLJames Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRLTatyana Feygelson, Naval Research LaboratoryJoseph Spencer, U.S. Naval Research Laboratory, Washington, DC, USA, Virginia TechTatyana I. Feygelson, American Society for Engineering Education, United States Naval Research Lab. Universidad Politecnica de MadridJennifer K. Hite, Naval Research LaboratoryDaniel Pennachio, U.S. Naval Research Laboratory, Washington DCAlan Jacobs, U.S. Naval Research Laboratory, Washington DCBoris Feygelson, U.S. Naval Research LaboratoryKohei Sasaki, Novel Crystal TechnologyAkito Kuramata, Novel Crystal Technology, IncPai-Ying Liao, Purdue UniversityPeide Ye, Purdue UniversityBradford Pate, Naval Research LaboratoryTravis J. Anderson, U.S. Naval Research LaboratoryMarko J. Tadjer, U.S. Naval Research Laboratory -
15.5.2023 Scalable Selective Area Doping for Manufacturing of Planar Vertical Power GaN Devices
Alan Jacobs, U.S. Naval Research Laboratory, Washington DCBoris N. Feigelson, Naval Research LaboratoryJennifer Hite, U.S. Naval Research LaboratoryJoseph Spencer, U.S. Naval Research Laboratory, Washington, DC, USA, Virginia TechPrakash Pandey, University of Toledo, Toledo OHDaniel G. Georgiev, University of Toledo, Toledo OHRaghav Khanna, University of Toledo, Toledo OHMarko J. Tadjer, U.S. Naval Research LaboratoryTravis J. Anderson, U.S. Naval Research Laboratory