It is well known that vertical GaN devices could surpass current lateral GaN switch technology due to higher critical electric fields and higher breakdown voltages from its different geometry, and lower impurity concentration from the superior quality of homoepitaxial films. However, the inconsistency of GaN substrate properties, both within wafer and vendor-to-vendor, makes reliable device fabrication difficult. Here we implement long-range spectroscopic studies of GaN substrates and epitaxial wafers using Raman, photoluminescence, and optical profilometry to assess incoming material and correlate to electrical performance of vertical diodes. We have classified incoming wafers into two general types, and determined that inhomogeneities in the wafers can negatively affect the reverse leakage current of PiN diodes.
Jennifer Hite
U.S. Naval Research Laboratory
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Predicting Vertical GaN Diode Quality using Long Range Optical tests on Substrates
Francis Kub, U.S. Naval Research LaboratoryJames Gallagher, U.S. Naval Research LaboratoryTravis Anderson, Naval Research LaboratoryAndrew Koehler, Naval Research LaboratoryMona Ebrish, National Research Council Postdoc Fellow Residing at the U.S. Naval Research LaboratoryMichael Mastro, U.S. Naval Research LaboratoryJennifer Hite, U.S. Naval Research LaboratoryKarl Holbart, U.S. Naval Research LaboratoryDownload Paper -
16.3 Evaluation of GaN Device Structures on 150 mm GaN on Engineered Substrates
Karl Hobart, Naval Research LaboratoryTravis Anderson, Naval Research LaboratoryAndrew Koehler, Naval Research LaboratoryAnindya Nath, George Mason UniversityJennifer Hite, U.S. Naval Research LaboratoryN. Mahadik, U.S. Naval Research LaboratoryFritz Kub, Naval Research LaboratoryOzgur Aktas, QROMIS, USAVladimir Odnoblyudov, QROMIS, USACem Basceri, QROMIS, USA -
9.1 Improvements in the Annealing of Ion Implanted III-Nitride Materials and Related Devices
Jordan Greenlee, NRC Postdoctoral Fellow Residing at the Naval Research LaboratoryTravis Anderson, Naval Research LaboratoryBoris Feigelson, Naval Research LaboratoryJennifer Hite, U.S. Naval Research LaboratoryKarl Hobart, Naval Research LaboratoryFrancis Kub, U.S. Naval Research Laboratory -
10b.4 Reliability Assessment of Thermally-Stable Gate Materials for AlGaN/GaN HEMTs
David Shahin, University of MarylandTravis Anderson, Naval Research LaboratoryJordan Greenlee, NRC Postdoctoral Fellow Residing at the Naval Research LaboratoryAndrew Koehler, Naval Research LaboratoryVirginia Wheeler, U.S. Naval Research LaboratoryMarko Tadjer, Naval Research LaboratoryTatyana Feygelson, Naval Research LaboratoryBradford Pate, Naval Research LaboratoryJennifer Hite, U.S. Naval Research LaboratoryKarl Hobart, Naval Research LaboratoryCharles Eddy, US Naval Research LaboratoryJr., Naval Research LaboratoryFrancis Kub, U.S. Naval Research LaboratoryAris Christou, University of Maryland-College Park