GaN is a promising material for more efficient high frequency and high voltage power switching. However, GaN still is not the common material for power electronics due to immature substrate, homoepitaxial growth, and processing technology. Electroluminescence is a promising method to predict failure points due to high field stress, which can assist in the separation of inherent defects stemming from substrate quality, and from process-induced defects as well as identify problems related to proper edge termination design. In this work, we compare the Electroluminescence signatures of devices on inhomogeneous substrates to DC I-V behavior to demonstrate the utility of the technique for process monitoring.
Joseph Spencer
U.S. Naval Research Laboratory, Washington, DC, USA, Virginia Tech
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Exploring the capability of Hyperspectral Electroluminescence for process monitoring in vertical GaN devices
Karl D. Hobart, U.S. Naval Research LaboratoryMona Ebrish, Vanderbilt University, Nashville, TNTravis J. Anderson, U.S. Naval Research LaboratoryJames Gallagher, U.S. Naval Research LaboratoryJoseph Spencer, U.S. Naval Research Laboratory, Washington, DC, USA, Virginia TechJennifer Hite, U.S. Naval Research LaboratoryMichael Mastro, U.S. Naval Research LaboratoryDownload Paper -
11.4.2023 Nanocrystalline Diamond-Capped β-(AlxGa1-x)2O3/Ga2O3 Heterostructure FieldEffect Transistor
Hannah N. Masten, National Research Council Postdoctoral Fellow, Residing at NRLJames Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRLTatyana Feygelson, Naval Research LaboratoryJoseph Spencer, U.S. Naval Research Laboratory, Washington, DC, USA, Virginia TechTatyana I. Feygelson, American Society for Engineering Education, United States Naval Research Lab. Universidad Politecnica de MadridJennifer K. Hite, Naval Research LaboratoryDaniel Pennachio, U.S. Naval Research Laboratory, Washington DCAlan Jacobs, U.S. Naval Research Laboratory, Washington DCBoris Feygelson, U.S. Naval Research LaboratoryKohei Sasaki, Novel Crystal TechnologyAkito Kuramata, Novel Crystal Technology, IncPai-Ying Liao, Purdue UniversityPeide Ye, Purdue UniversityBradford Pate, Naval Research LaboratoryTravis J. Anderson, U.S. Naval Research LaboratoryMarko J. Tadjer, U.S. Naval Research Laboratory -
15.5.2023 Scalable Selective Area Doping for Manufacturing of Planar Vertical Power GaN Devices
Alan Jacobs, U.S. Naval Research Laboratory, Washington DCBoris N. Feigelson, Naval Research LaboratoryJennifer Hite, U.S. Naval Research LaboratoryJoseph Spencer, U.S. Naval Research Laboratory, Washington, DC, USA, Virginia TechPrakash Pandey, University of Toledo, Toledo OHDaniel G. Georgiev, University of Toledo, Toledo OHRaghav Khanna, University of Toledo, Toledo OHMarko J. Tadjer, U.S. Naval Research LaboratoryTravis J. Anderson, U.S. Naval Research Laboratory