Kevin Leedy

AFRL

  • Self-Aligned Refractory Metal Gate Scaling in β-Ga2O3 MOSFETs

    Kelson Chabak, Air Force Research Laboratory
    Kyle Liddy, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
    Andrew Green, Air Force Research Laboratory
    Thaddeus Asel, Air Force Research Laboratory, Wright Patterson AFB, OH, USA
    Shin Mou, Air Force Research Laboratory, Wright Patterson AFB, OH
    Kevin Leedy, AFRL
    Donald Dorsey, Air Force Research Laboratory Materials and Manufacturing Directorate

    This work characterizes the effects of gate-length (LG) scaling in a self-aligned gate (SAG) β-Ga2O3 MOSFET process. Additional performance gains are expected by extending the SAG process from large LG to sub-micrometer dimensions.  This data incorporates LG scaling down to 200 nm to improve device performance in Ga2O3 SAG MOSFETs using a stepper lithography process to define sub-micron gate lengths.

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  • 14.4 Device Development of Gallium Oxide MOSFETs Grown by MOVPE on Native Substrates for High-Voltage Applications

    Neil Moser A., Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,
    Kelson Chabak, Air Force Research Laboratory
    Andrew Green, Air Force Research Laboratory
    Dennis Walker, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
    Stephen Tetlak, AFRL
    Eric Heller, AFRL
    Antonio Crespo, AFRL
    Robert Fitch, AFRL
    Jonathan McCandless, AFRL
    Kevin Leedy, AFRL
    Michele Baldini, Leibniz-Institut für Kristallzüchtung
    Guenter Wagner, Leibniz-Institut für Kristallzüchtung
    Glen Via, AFRL
    John Blevins, Air Force Research Laboratory (AFRL), Wright-Patterson AFB, OH
    Gregg Jessen, AFRL
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