Marc Scimonelli

Northrop Grumman Corporation
  • 100nm, Three-dimensional T-Gate for SLCFET Amplifiers

    Robert Howell, Northrop Grumman Corporation
    Annaliese Drechsler, Northrop Grumman Corporation
    Ken Nagamatsu, Northrop Grumman Corporation
    Kevin Frey, Northrop Grumman Corporation
    Monique Farrell, Northrop Grumman Corporation
    Georges Siddiqi, Northrop Grumman Corporation
    Marc Scimonelli, Northrop Grumman Corporation
    Jordan Merkle, Northrop Grumman Corporation
    Josephine Chang, Northrop Grumman Corporation

    This report describes the first demonstration of a 100nm T-gate for the Superlattice Castellation Field Effect Transistor (SLCFET) amplifier. The SLCFET amplifier device utilizes a superlattice of GaN/AlGaN channels, which enables a high charge density and low source resistance. A three-dimensional T-gate structure provides electrostatic control of the channels while maintaining high gain. Improvements to the T-gate process have allowed for the scaling of the gate down to 100nm while maintaining excellent gate control, with an on to off current ratio exceeding 107. This gate scaling allows the device to reach FT / FMAX of 70/110 GHz with full passivation to maintain compatibility with the productionized SLCFET switch process.

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