Martin Kuball

University of Bristol
  • 16.1 Effect of Manufacture on the Microstructure of GaN-on-Diamond

    Dong Liu, University of Oxford, University of Bristol
    Daniel Francis, Element Six Technologies
    Firooz Faili, Element Six Technologies
    James Pomeroy, University of Bristol
    Daniel Twitchen, Element Six Technologies
    Martin Kuball, University of Bristol
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  • 18.1 Link Between Silicon Nitride Stoichiometry, Vertical Epitaxial Conductivity and Current Collapse in AlGaN/GaN Power Devices

    William Waller, University of Bristol
    Mark Gajda, NXP Semiconductors
    Saurabh Pandey, NXP Semiconductors
    Johan Donkers, NXP Semiconductors
    David Calton, NXP Semiconductors
    Jeroen Croon, NXP Semiconductors
    Serge karboyan, University of Bristol
    Michael Uren, University of Bristol
    Martin Kuball, University of Bristol
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  • 2.2 Interfacial strength and fracture toughness in bonded semiconductor materials

    Dong Liu, University of Oxford, University of Bristol
    Jianbo Liang, Osaka City University, University of Bristol
    Naoteru Shigekawa, Osaka City University
    Martin Kuball, University of Bristol
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  • 5.2 Device-to-device coupling via lateral conduction within the epitaxy in C-doped AlGaN/GaN HEMTs

    Manikant Singh, University of Bristol
    Serge karboyan, University of Bristol
    Michael J. Uren
    Kean Boon Lee, University of Sheffield
    Zaffar Zaidi, University of Sheffield
    Peter Houston, University of Sheffield, Sheffield
    Martin Kuball, University of Bristol
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  • Simulation of Leakage Induced Suppression of Bulk Dynamic RON in Power Switching GaN-on-Si HEMTs

    Martin Kuball, University of Bristol
    Michael Uren, University of Bristol
    Stefano Dalcanale, University of Bristol
    Feiyuan Yang, University of Bristol
    Ahmed Nejim, Silvaco Europe
    Stephen Wilson, Silvaco Europe

    Bulk induced dynamic RON in GaN-on-Si HEMTs is a serious performance limiting instability which remains a problem even in some commercially available power switching devices. Its origin is now reasonably well understood, however until now it has not been possible to simulate it using a realistic epitaxial stack. For the first time we successfully simulate the controlled suppression of bulk dynamic RON by adding a specific model for leakage along threading dislocations. This was undertaken using a commercially available standard TCAD simulator, allowing realistic device optimization in an advanced GaN HEMT design flow.

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  • 5a.4 Back Bias Ramping and Photoionization Spectroscopy Analysis of GaN-on-Si HFETs

    Alexander Pooth, University of Bristol
    Michael Uren, University of Bristol
    Trevor Martin, IQE Europe, St Mellons, Cardiff, UK
    Martin Kuball, University of Bristol
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  • 8a.4 GaN-on-Diamond: Robust Mechanical and Thermal Properties

    Martin Kuball, University of Bristol
    Huarui Sun, University of Bristol
    Dong Liu, University of Oxford, University of Bristol
    James Pomeroy, University of Bristol
    Daniel Francis, Element Six Technologies
    Firooz Faili, Element Six Technologies
    Daniel Twitchen, Element Six Technologies
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  • 8b.2 Dynamic-Ron in Small and Large C-doped AlGaN/GaN-on-Si HEMTs

    Serge karboyan, University of Bristol
    Sara Martin Horcajo, Centre for Device Thermography and Reliability (CDTR), University of Bristol
    James Pomeroy, University of Bristol
    Indranil Chatterjee, H H Wills Physics Laboratory, University of Bristol, BS8 1TL, United Kingdom
    Michael Uren, University of Bristol
    Peter Moens, ON Semiconductor, Corp. R&D
    Abishek Banerjee, ON Semiconductor, Oudenaarde 9700, Belgium
    Markus Caesar, ON Semiconductor, Oudenaarde 9700, Belgium
    Martin Kuball, University of Bristol
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  • 10b.5 Transient Thermoreflectance for Device Temperature Assessment in Pulsed-Operated GaN-based HEMTs

    Sara Martin Horcajo, Centre for Device Thermography and Reliability (CDTR), University of Bristol
    James Pomeroy, University of Bristol
    BenoƮt Lambert, United Monolithic Semiconductors Germany
    Helmut Jung, United Monolithic Semiconductors GmbH, Ulm, Germany
    Martin Kuball, University of Bristol
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