Bulk induced dynamic RON in GaN-on-Si HEMTs is a serious performance limiting instability which remains a problem even in some commercially available power switching devices. Its origin is now reasonably well understood, however until now it has not been possible to simulate it using a realistic epitaxial stack. For the first time we successfully simulate the controlled suppression of bulk dynamic RON by adding a specific model for leakage along threading dislocations. This was undertaken using a commercially available standard TCAD simulator, allowing realistic device optimization in an advanced GaN HEMT design flow.
Martin Kuball
University of Bristol
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16.1 Effect of Manufacture on the Microstructure of GaN-on-Diamond
Download PaperDong Liu, University of Oxford, University of BristolDaniel Francis, Akash Systems, San Francisco, CA, USAFirooz Faili, Element Six Technologies, Santa Clara, CAJames Pomeroy, University of Bristol, Bristol, UK and 3TherMap Solutions, Bristol, UKDaniel Twitchen, Element Six TechnologiesMartin Kuball, University of Bristol -
18.1 Link Between Silicon Nitride Stoichiometry, Vertical Epitaxial Conductivity and Current Collapse in AlGaN/GaN Power Devices
Download PaperWilliam Waller, University of BristolMark Gajda, NXP SemiconductorsSaurabh Pandey, NXP SemiconductorsJohan Donkers, NXP SemiconductorsDavid Calton, NXP SemiconductorsJeroen Croon, NXP SemiconductorsSerge Karboyan, Nexperia. Manchester, UKMichael Uren, University of BristolMartin Kuball, University of Bristol -
2.2 Interfacial strength and fracture toughness in bonded semiconductor materials
Download PaperDong Liu, University of Oxford, University of BristolJianbo Liang, Osaka City University, University of BristolNaoteru Shigekawa, Osaka City UniversityMartin Kuball, University of Bristol -
5.2 Device-to-device coupling via lateral conduction within the epitaxy in C-doped AlGaN/GaN HEMTs
Download PaperManikant Singh, University of BristolSerge Karboyan, Nexperia. Manchester, UKKean Boon Lee, University of SheffieldZaffar Zaidi, University of SheffieldPeter Houston, University of Sheffield, SheffieldMartin Kuball, University of Bristol -
Simulation of Leakage Induced Suppression of Bulk Dynamic RON in Power Switching GaN-on-Si HEMTs
Martin Kuball, University of BristolMichael Uren, University of BristolStefano Dalcanale, University of BristolFeiyuan Yang, University of BristolAhmed Nejim, Silvaco EuropeStephen Wilson, Silvaco EuropeDownload Paper -
5a.4 Back Bias Ramping and Photoionization Spectroscopy Analysis of GaN-on-Si HFETs
Download PaperAlexander Pooth, University of BristolMichael Uren, University of BristolTrevor Martin, IQE Europe, St Mellons, Cardiff, UKMartin Kuball, University of Bristol -
8a.4 GaN-on-Diamond: Robust Mechanical and Thermal Properties
Download PaperMartin Kuball, University of BristolHuarui Sun, University of BristolDong Liu, University of Oxford, University of BristolJames Pomeroy, University of Bristol, Bristol, UK and 3TherMap Solutions, Bristol, UKDaniel Francis, Akash Systems, San Francisco, CA, USAFirooz Faili, Element Six Technologies, Santa Clara, CADaniel Twitchen, Element Six Technologies -
8b.2 Dynamic-Ron in Small and Large C-doped AlGaN/GaN-on-Si HEMTs
Download PaperSerge Karboyan, Nexperia. Manchester, UKSara Martin Horcajo, Centre for Device Thermography and Reliability (CDTR), University of BristolJames Pomeroy, University of Bristol, Bristol, UK and 3TherMap Solutions, Bristol, UKIndranil Chatterjee, H H Wills Physics Laboratory, University of Bristol, BS8 1TL, United KingdomMichael Uren, University of BristolPeter Moens, ON Semiconductor, Corp. R&DAbishek Banerjee, ON Semiconductor, Oudenaarde 9700, BelgiumMarkus Caesar, ON Semiconductor, Oudenaarde 9700, BelgiumMartin Kuball, University of Bristol -
10b.5 Transient Thermoreflectance for Device Temperature Assessment in Pulsed-Operated GaN-based HEMTs
Download PaperSara Martin Horcajo, Centre for Device Thermography and Reliability (CDTR), University of BristolJames Pomeroy, University of Bristol, Bristol, UK and 3TherMap Solutions, Bristol, UKBenoît Lambert, United Monolithic Semiconductors GermanyHelmut Jung, United Monolithic Semiconductors GmbH, Ulm, GermanyMartin Kuball, University of Bristol -
May 11, 2022 // 4:50pm
12.2 Differences in SiC Wafer Thermal Conductivity from Face-to-Face Dependent on Polishing
Daniel Field, University of BristolMartin Kuball, University of BristolFilip Wach, University of BristolDownload PaperStudent Presentation