In this work we present a systematic study on the conduction properties in vertical GaN trench MISFETs grown and manufactured on different free standing GaN substrates. It is shown that devices manufactured on ammonothermal substrates have superior conduction current density higher than 4 kA/cm2, specific on‑state resistance as low as 1.1 ± 0.1 mWcm2 and channel sheet resistance of 19.6 ± 0.9 Wmm. It is further shown that scaling these devices to large gate periphery is not limited by current spreading in the drift region, low channel mobility or by self‑heating. The conduction properties of devices manufactured on ammonothermal GaN substrates are found to be the most suitable for pulsed laser driving applications.
Oliver Hilt
Ferdinand-Braun-Institut, Berlin, Germany
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The influence of the GaN substrate types and the active area scaling design on the conduction properties of vertical GaN MISFETs for laser driving applications
Joachim Würfl, Ferdinand-Braun-Institut, Berlin, GermanyEldad Bahat Treidel, Ferdinand-Braun-Institut, Berlin, GermanyOliver Hilt, Ferdinand-Braun-Institut, Berlin, GermanyVeit Hoffman, Ferdinand-Braun-Institut, Leibniz-Institut für HöchstfrequenztechnikFrank Brunner, Ferdinand-Braun-Institut, Berlin, GermanyBernd Janke, Ferdinand-Braun-Institut, Leibniz-Institut für HöchstfrequenztechnikNicole Bickel, Ferdinand-Braun-Institut, Leibniz-Institut für HöchstfrequenztechnikHossein Yazdani, Ferdinand-Braun-Institut, Leibniz-Institut für HöchstfrequenztechnikHassan Gargouri, SENTECH Instruments GmbHDownload Paper -
May 12, 2022 // 11:10am
14.2 Areal Vertical-Transmission Line Model Measurement for Drift Region Characterization in Vertical GaN-Based Devices
Download PaperEldad Bahat Treidel, Ferdinand-Braun-Institut, Berlin, GermanyFrank Brunner, Ferdinand-Braun-Institut, Berlin, GermanyOliver Hilt, Ferdinand-Braun-Institut, Berlin, GermanyJoachim Würfl, Ferdinand-Braun-Institut, Berlin, GermanyMihaela Wolf, Ferdinand-Braun-Institut, Berlin, Germany