J. C. Gallagher

U.S. Naval Research Laboratory
  • May 12, 2022 // 3:20pm

    18.6 Chemical Mechanical Polishing of β-Ga2O3

    M.S. Goorsky, University of California, Los Angeles, CA USA
    M. E. Liao, University of California, Los Angeles, CA USA
    K. Huynh, University of California, Los Angeles, CA USA
    W. Olsen, University of California, Los Angeles, CA USA
    X. Huang, Argonne National Laboratory
    M. Wojcik, Argonne National Laboratory
    J. C. Gallagher, U.S. Naval Research Laboratory
    Y. Wang, University of California, Los Angeles, CA USA

    Student Presentation

    Abstract

    Download Paper

  • 9.4.2023 Scalable Manufacturing of Planar, Large-Area 1.2kV and 3.3kV Vertical GaN PiN Diodes

    Alan Jacobs, U.S. Naval Research Laboratory, Washington DC
    Mona Ebrish, NRC Postdoc Fellow Residing at the U.S. Naval Research Laboratory
    James Gallagher, U.S. Naval Research Laboratory
    Marko J. Tadjer, U.S. Naval Research Laboratory
    James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
    Jennifer K. Hite, Naval Research Laboratory
    N. Mahadik, U.S. Naval Research Laboratory
    Robert Kaplar, Sandia National Labs, Albuquerque, NM
    O. Aktas, Sandia National Labs, Albuquerque, NM

    9.4.2023_Anderson

  • 10.5.2023 Accuracy of Machine Learning Models on Predicting the Properties of Vertical GaN Diodes

    James Gallagher, U.S. Naval Research Laboratory
    Michael A. Mastro, U.S. Naval Research Laboratory
    Mona Ebrish, Vanderbilt University, Nashville, TN
    Alan Jacobs, U.S. Naval Research Laboratory, Washington DC
    Brendan. P. Gunning, Sandia National Labs, Albuquerque, NM
    Robert Kaplar, Sandia National Labs, Albuquerque, NM

    10.5.2023_Gallagher