Jacob Yun

QSI

  • 2.5.2023 Lg = 25 nm In0.8Ga0.2As/In0.52Al0.48As High-Electron Mobility Transistors on InP Substrate with Both fT and fmax in Excess of 700 GHz

    In-Geun Lee, Kyungpook National University
    Hyeon-Bhin Jo, School of Electronic and Electrical Engineering, Kyungpook National University
    Wan-Soo Park, Kyungpook National University
    Ji-Hoon Yoo, School of Electronic and Electrical Engineering, Kyungpook National University
    Jacob Yun, QSI
    Ted Kim, QSI
    Takuya Tsutsumi, QSI, Cheon-An, Kyunggi-do, 31044, South Korea
    Hiroki Sugiyama, NTT Device Technology Laboratories, NTT Corporation, Kanagawa, Japan
    Jae-Hak Lee, Kyungpook National University
    Dae-Hyun Kim, Kyungpook National University

    2.5,2023_Lee_Final_Paper

  • 18.12.2023 Analytical model for the source resistance in advanced InxGa1-xAs/In0.52Al0.48As quantum-well high-electron-mobility transistors

    Ji-Hoon Yoo, School of Electronic and Electrical Engineering, Kyungpook National University
    Jae-Hak Lee, Kyungpook National University
    Yong-Hyun Kim, QSI, Cheon-An, Kyunggi-do, 31044, South Korea
    Sang-Kuk Kim, QSI, Cheon-An, Kyunggi-do, 31044, South Korea
    Jacob Yun, QSI
    Ted Kim, QSI
    In-Geun Lee, Kyungpook National University
    Dae-Hyun Kim, Kyungpook National University

    18.12.2023_CS_MANTECH_Full_Paper_JHY_

  • 18.14.2023 A new methodology to extract saturation velocity of In0.53Ga0.47As QW HEMTs

    Hyo-Jin Kim, Kyungpook National University
    Ji-Hoon Yoo, School of Electronic and Electrical Engineering, Kyungpook National University
    Wan-Soo Park, Kyungpook National University
    Hyeon-Bhin Jo, School of Electronic and Electrical Engineering, Kyungpook National University
    In-Geun Lee, Kyungpook National University
    Tae-Woo Kim, University of Ulsan, Ulsan, South Korea
    Sang-Kuk Kim, QSI, Cheon-An, Kyunggi-do, 31044, South Korea
    Yong-Hyun Kim, QSI, Cheon-An, Kyunggi-do, 31044, South Korea
    Jacob Yun, QSI
    Ted Kim, QSI
    Takuya Tsutsumi, QSI, Cheon-An, Kyunggi-do, 31044, South Korea
    Hiroki Sugiyama, NTT Device Technology Laboratories, NTT Corporation, Kanagawa, Japan
    Hideaki Matsuzaki, NTT Device Technology Laboratories, NTT Corporation, Kanagawa, Japan
    Jae-Hak Lee, Kyungpook National University
    Dae-Hyun Kim, Kyungpook National University

    18.14.2023_CS_MANTECH-extended papar_v4

  • 3.2.2.2024 Improved thermal reliability in base contact of full 3-inch InP Double-HBTs with fT and fmax in excess of 300 GHz

    In-Geun Lee, Kyungpook National University
    Yong-Soo Jeon, Kyungpook National University
    Yonghyun Kim, QSI
    Jacob Yun, QSI
    Ted Kim, QSI
    Hyuk-Min Kwon, QSI
    Seung Heon Shin, Korea Polytechnics
    Jae-Hak Lee, Kyungpook National University
    Kyunghoon Yang, Korea Advanced Institute of Science and Technology
    Dae-Hyun Kim, Kyungpook National University
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  • 3.2.3.2024 5-level stacked In0.53Ga0.47As Multi-Bridged Channel Field-Effect Transistors

    J. H. Yoo, Kyungpook National University
    H.-B. Jo, Kyungpook National University & KETI
    In-Geun Lee, Kyungpook National University
    Su-Min Choi, Kyungpook National University
    H. J. Kim, Kyungpook National University
    W. S. Park, Kyungpook National University
    H. Jang, KANC
    C.-S. Shin, KANC
    K. S. Seo, KANC
    S. H. Shin, Polytech, Incheon
    H. M. Kwon, Polytech, Incheon
    SK Kim, QSI
    JG Kim, QSI
    Jacob Yun, QSI
    Ted Kim, QSI
    J. H. Lee, Kyungpook National University
    D.-H. Kim, Kyungpook National University
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