Marko J. Tadjer
U.S. Naval Research Laboratory
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14.9 Fabrication of True Vertical GaN Schottky Diodes from 150 mm Engineered Substrates
Download PaperLunet E. Luna, NRC Postdoctoral Fellow Residing at NRLMarko J. Tadjer, U.S. Naval Research LaboratoryOzgur Aktas, QROMIS, USAFritz J. Kub, U.S. Naval Research Laboratory -
8.3.2023 Heterogeneous Integration of Gallium Nitride HEMTs with Single Crystal Diamond Substrates via Micro-transfer Printing for Thermal Management
James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRLAndy Xie, QorvoShawn Mack, U.S. Naval Research LaboratoryD. Scott Katzer, U.S. Naval Research LaboratoryMarko J. Tadjer, U.S. Naval Research LaboratoryTravis J. Anderson, U.S. Naval Research LaboratoryBrian Downey, US Naval Research LaboratoryDavid J Meyer, U.S. Naval Research Laboratory, Washington, DC -
9.4.2023 Scalable Manufacturing of Planar, Large-Area 1.2kV and 3.3kV Vertical GaN PiN Diodes
Alan Jacobs, U.S. Naval Research Laboratory, Washington DCMona Ebrish, NRC Postdoc Fellow Residing at the U.S. Naval Research LaboratoryJames Gallagher, U.S. Naval Research LaboratoryMarko J. Tadjer, U.S. Naval Research LaboratoryJames Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRLJennifer K. Hite, Naval Research LaboratoryN. Mahadik, U.S. Naval Research LaboratoryRobert Kaplar, Sandia National Labs, Albuquerque, NMO. Aktas, Sandia National Labs, Albuquerque, NM -
11.3.2023 Structural and Electrical Characterization of Schottky Barrier Diodes on 100 mm HVPE β-Ga2O3 Epiwafer Technology
Marko J. Tadjer, U.S. Naval Research LaboratoryJames Gallagher, ASEE Postdoctoral Fellow Residing at NRLN. Mahadik, U.S. Naval Research LaboratoryHannah N. Masten, National Research Council Postdoctoral Fellow, Residing at NRLJames Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRLAkito Kuramata, Novel Crystal Technology, Inc -
11.4.2023 Nanocrystalline Diamond-Capped β-(AlxGa1-x)2O3/Ga2O3 Heterostructure FieldEffect Transistor
Hannah N. Masten, National Research Council Postdoctoral Fellow, Residing at NRLJames Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRLTatyana Feygelson, Naval Research LaboratoryJoseph Spencer, U.S. Naval Research Laboratory, Washington, DC, USA, Virginia TechTatyana I. Feygelson, American Society for Engineering Education, United States Naval Research Lab. Universidad Politecnica de MadridJennifer K. Hite, Naval Research LaboratoryDaniel Pennachio, U.S. Naval Research Laboratory, Washington DCAlan Jacobs, U.S. Naval Research Laboratory, Washington DCBoris Feygelson, U.S. Naval Research LaboratoryKohei Sasaki, Novel Crystal TechnologyAkito Kuramata, Novel Crystal Technology, IncPai-Ying Liao, Purdue UniversityPeide Ye, Purdue UniversityBradford Pate, Naval Research LaboratoryTravis J. Anderson, U.S. Naval Research LaboratoryMarko J. Tadjer, U.S. Naval Research Laboratory -
15.3.2023 Characterization of Nitridated Ga2O3 for GaN-on-Ga2O3 Power Device Applications
Matthew Landi, University of Illinois at Urbana-ChampaignFrank Kelly, University of Illinois at Urbana-ChampaignRiley Vesto, University of Illinois at Urbana-ChampaignMarko J. Tadjer, U.S. Naval Research LaboratoryKyekyoon Kim, University of Illinois at Urbana-Champaign -
15.5.2023 Scalable Selective Area Doping for Manufacturing of Planar Vertical Power GaN Devices
Alan Jacobs, U.S. Naval Research Laboratory, Washington DCBoris N. Feigelson, Naval Research LaboratoryJennifer Hite, U.S. Naval Research LaboratoryJoseph Spencer, U.S. Naval Research Laboratory, Washington, DC, USA, Virginia TechPrakash Pandey, University of Toledo, Toledo OHDaniel G. Georgiev, University of Toledo, Toledo OHRaghav Khanna, University of Toledo, Toledo OHMarko J. Tadjer, U.S. Naval Research LaboratoryTravis J. Anderson, U.S. Naval Research Laboratory